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/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO
interlayerTanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Dai-19-Kai Getosutakku KenkyuKai Yokoshu, p.5 - 8, 2014/01
/Ge gate stacks and its impact on electrical propertiesHosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Microelectronic Engineering, 109, p.137 - 141, 2013/09
Times Cited Count：12 Percentile：54.11(Engineering, Electrical & Electronic)/Ge gate stacks and its impact on electrical propertiesHosoi, Takuji*; Hideshima, Iori*; Minoura, Yuya*; Tanaka, Ryohei*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Shingaku Giho, 113(87), p.19 - 23, 2013/06
An understanding of the mechanisms responsible for formation or decomposition of GeO interlayer and Ge diffusion into high- layer is important to develop advanced metal/high- gate stacks for Ge MOSFETs. In this work, we fabricated HfO
/GeO/Ge gate stacks by 
oxidation of thin metal Hf layers on Ge substrates. The effect of plasma oxidation on the change in the bonding states of Ge atoms in HfO/GeO/Ge gate stacks and the structural changes induced by metal electrode deposition and thermal annealing was systematically investigated by synchrotron radiation photoemission spectroscopy (SR-PES) and electrical characterization.
by ion beam irradiationKakizono, Toshihide*; Sugiura, Toshihiro*; Yoshihara, Ryohei; Hase, Yoshihiro; Narumi, Issei; Tanaka, Atsushi
JAEA-Review 2007-060, JAEA Takasaki Annual Report 2006, P. 91, 2008/03
no abstracts in English
AlOzawa, Akira*; Matsuta, Kensaku*; Nagatomo, Takashi*; Mihara, Mototsugu*; Yamada, Kazunari*; Yamaguchi, Takayuki*; Otsubo, Takashi*; Momota, Sadao*; Izumikawa, Takuji*; Sumikama, Toshiyuki*; et al.
Physical Review C, 74(2), p.021301_1 - 021301_4, 2006/08
Times Cited Count：43 Percentile：89.18(Physics, Nuclear)no abstracts in English
/Ge stacks fabricated by MBD methodHideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
no abstracts in English
/Ge gate stack with an EOT of 0.56 nm by controlling high-/Ge interface reaction using ultrathin AlO interlayerTanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
no abstracts in English
interlayerHosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
no journal, ,
no abstracts in English
