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Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Arai, Manabu*; Tanaka, Yasunori*
Physics and Technology of Silicon Carbide Devices, p.379 - 402, 2012/10
SiC is regarded as a promising candidate for electronic devices used in harsh radiation environments because of its high radiation tolerance. Radiation effects on SiC devices are reviewed. Firstly, the Total Ionizing Dose (TID) effect in Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) is introduced. Then, the radiation hardness of SiC based transistors such as MOSFETs, Metal-Semiconductor (MES) FETs, Static Induction Transistors (SITs) is discussed from the point of view of 
-ray irradiation effects. Transient current induced in SiC pn diodes by heavy ions incidence, which is important information on the single event effects (SEEs), is also expressed.
Oshima, Takeshi; Onoda, Shinobu; Tanaka, Yasunori*; Arai, Manabu*
Isotope News, (686), p.8 - 12, 2011/06
no abstracts in English
Tanaka, Yasunori*; Onoda, Shinobu; Takatsuka, Akio*; Oshima, Takeshi; Yatsuo, Tsutomu*
Materials Science Forum, 645-648, p.941 - 944, 2010/04
no abstracts in English
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V
) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I
) - drain voltage (V) curves are 230 cm
/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V
) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count：39 Percentile：77.43(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100
C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi
Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00
no abstracts in English
-ray irradiation on electrical characteristics of SiC schottky barrier diodeKinoshita, Akimasa*; Tanaka, Yasunori*; Tanaka, Tomoyuki*; Fukuda, Kenji*; Arai, Kazuo*; Oshima, Takeshi; Hishiki, Shigeomi
no journal, ,
no abstracts in English
Tanaka, Yasunori*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English
Onoda, Shinobu; Oshima, Takeshi; Tanaka, Yasunori*; Takatsuka, Akio*; Yatsuo, Tsutomu*
no journal, ,
no abstracts in English
Tanaka, Yasunori*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English
