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Journal Articles

Comparative study on degradation characteristics of component subcells in IMM triple-junction solar cells irradiated with high-energy electrons and protons

Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Tajima, Michio*; Sato, Shinichiro; Oshima, Takeshi

Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.3243 - 3248, 2013/06

Radiation response of InGaP, GaAs, InGaAs (In=20%) and InGaAs (In=30%) single-junction solar cells, which are the component sbcells of IMM3J cells, were comparatively studied. High-energy electrons (1 MeV) and protons (10 MeV) were irradiated to the four types of the cells. The InGaP cell has the highest radiation resistance to both electrons and protons amongst the four cells as expected. On the other hand, the InGaAs cells have less resistant for Isc compared to InGaP and GaAs cells. However, the resistance of Voc of InGaAs cells is comparable to that of the other two cells. As a general result, InGaAs cells have less radiation resistance to electrons, while they have the resistance against protons equivalent to GaAs cell. These radiation response properties of InGaAs cells are thought to be useful to design radiation resistant IMM3J space solar cells.

Journal Articles

Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

Nakagawa, Satoko*; Tajima, Michio*; Hirose, Kazuyuki*; Oshima, Takeshi; Ito, Hisayoshi

Japanese Journal of Applied Physics, 48(3), p.031201_1 - 031201_4, 2009/03

 Times Cited Count:4 Percentile:18.61(Physics, Applied)

Light element impurities in ultrathin top Silicon layers of silicon-on-insulator (SOI) wafers were investigated by a luminescence activation method using electron irradiation. Photoluminescence (PL) measurement using ultraviolet (UV) light excitation was carried out of various commercial SOI wafers irradiated with electrons. The C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm were observed after electron irradiation. There were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. The present method is a verypromising tool to evaluate the light element impurities in top Si layers.

Journal Articles

Durability of triple-junction solar cell for HIHT environments, venus and mercury exploration missions

Imaizumi, Mitsuru*; Toyota, Hiroyuki*; Shimada, Takanobu*; Ogawa, Hiroyuki*; Tajima, Michio*; Hisamatsu, Tadashi*; Nakamura, Kazuyo*; Takamoto, Tatsuya*; Sato, Shinichiro; Oshima, Takeshi

Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.127 - 130, 2008/12

Results of our study of effects of high-light-intensity and high-temperature conditions (HIHT) on the output performance of an InGaP/GaAs/Ge triple-junction solar cell are described herein. The HIHT conditions are adjusted for spacecraft environments expected for a Venus mission (Planet-C) and a Mercury mission (MMO) to be undertaken by the Japan Aerospace Exploration Agency (JAXA). Measurements of current-voltage characteristics under high light intensity for wide range of cell temperatures exhibit a kinked pattern at 0 current at +200$$^{circ}$$C. The thermal cycle test results for bare cells with a wide temperature range show no output performance degradation. Continuous operation tests of 3J cells under HIHT conditions reveal gradual current output degradation, implying that solar panel design should address decreased output specifically.

Journal Articles

Durability of triple-junction solar cell for HIHT environments, venus and mercury exploration missions

Imaizumi, Mitsuru*; Toyota, Hiroyuki*; Shimada, Toru*; Ogawa, Hiroyuki*; Tajima, Michio*; Hisamatsu, Tadashi*; Nakamura, Kazuyo*; Takamoto, Tatsuya*; Sato, Shinichiro; Oshima, Takeshi

Proceedings of 8th European Space Power Conference (CD-ROM), 6 Pages, 2008/09

Results of our study of effects of high-light-intensity and high-temperature conditions (HIHT) on the output performance of an InGaP/GaAs/Ge triple-junction solar cell are described herein. The HIHT conditions are adjusted for spacecraft environments expected for a Venus mission (Planet-C) and a Mercury mission (MMO) to be undertaken by the Japan Aerospace Exploration Agency (JAXA). Measurements of currentvoltage characteristics under high light intensity for a wide range of cell temperatures exhibit a kinked pattern at 0 current at +200$$^{circ}$$C. The thermal cycle test results for bare cells with a wide temperature range show no output performance degradation. Continuous operation tests of 3J cells under HIHT conditions reveal gradual current output degradation, implying that solar panel design should address decreased output specifically.

Journal Articles

Structural study on (Al)InGaP single-junction solar cell for performance improvement of triple-junction solar cells

Morioka, Chiharu*; Imaizumi, Mitsuru*; Sugimoto, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Tajima, Michio*

Proceedings of 17th International Photovoltaic Science and Engineering Conference (PVSEC-17) (CD-ROM), p.504 - 505, 2007/12

Radiation resistance of (Al)InGaP solar cells was examined in this study. The epitaxial structure, such as aluminum contents or carrier concentration (CC) in the base layer, is varied, whereas the base layer thickness is maintained at 1 $$mu$$ m. The cells are irradiated with 3 MeV protons up to the fluence of $$1 times 10^{14}$$ cm$$^{-2}$$. Remaining factors of short-circuit current and open-circuit voltage show no significant difference between Al$$_{0.2}$$In$$_{0.5}$$Ga$$_{0.3}$$P and In$$_{0.5}$$Ga$$_{0.5}$$P cells. The graded CC structure in the base layer is ineffective to improve radiation resistance in the case of (Al)InGaP cells with a thick base layer, which implies that radiation degradation is not primarily attributable to the decrease in minority-carrier diffusion length.

Journal Articles

Photoluminescence evaluation of light element impurities in ultrathin SOI wafers by luminescence activation using electron irradiation

Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi

Materials Science & Engineering B, 134(2-3), p.172 - 175, 2006/10

 Times Cited Count:1 Percentile:6.65(Materials Science, Multidisciplinary)

no abstracts in English

JAEA Reports

None

*; *; *; *; *

JNC TJ1450 99-003, 90 Pages, 1997/03

JNC-TJ1450-99-003.pdf:5.91MB

None

Oral presentation

Analysis of light element impurities in ultrathin SOI wafers by luminescence activation using Xe ion implantation

Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Evaluation of light element impurities in ultrathin SOI wafers by luminescence activation using electron irradiation

Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Optical properties of AlInGaP single junction solar cell

Morioka, Chiharu*; Sugimoto, Hiroki*; Sato, Shinichiro; Imaizumi, Mitsuru*; Oshima, Takeshi; Tajima, Michio*; Kibe, Koichi*

no journal, , 

no abstracts in English

Oral presentation

Applications of mono-energetic $$gamma$$-ray to peaceful and safe use of nuclear energy

Hajima, Ryoichi; Hayakawa, Takehito; Shizuma, Toshiyuki; Kikuzawa, Nobuhiro; Tajima, Toshiki; Seya, Michio

no journal, , 

We propose a novel mono-energetic $$gamma$$-ray source based on an energy-recovery linac and a fiber laser. The $$gamma$$-ray is generated via Compton scattering and its energy is tunable. The $$gamma$$-ray can be used for non-destructive detection and assay of radio isotopes. We discuss possible applications of the mono-energetic $$gamma$$-ray to peaceful and safe use of nuclear energy in future.

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