JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-8 displayed on this page of 8
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

High-energy ion irradiation effects on atomic structures and optical properties of copper oxide and electronic sputtering

Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Ishikawa, Norito; Tazawa, Masato*; Kakiuchida, Hiroshi*

Nuclear Instruments and Methods in Physics Research B, 266(12-13), p.2986 - 2989, 2008/06

https://doi.org/10.1016/j.nimb.2008.03.183
 Times Cited Count：8 Percentile：50.26(Instruments & Instrumentation)

Irradiation effects of Cu$$_{2}$$O irradiated with 100 MeV Xe ions were studied. X-ray diffraction intensity and optical properties were analyzed.

Journal Articles

Electronic sputtering of nitrides by high-energy ions

Matsunami, Noriaki*; Sataka, Masao; Okayasu, Satoru; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 256(1), p.333 - 336, 2007/03

https://doi.org/10.1016/j.nimb.2006.12.022
 Times Cited Count：15 Percentile：70.17(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.126
 Times Cited Count：15 Percentile：70.41(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.146
 Times Cited Count：24 Percentile：82.92(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO$$_{2}$$ glass substrate were prepared by a RF-sputter-deposition method at 400 $$^{circ}$$C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 $$mu$$m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.5$$times$$10$$^{2}$$ to 8$$times$$10$$^{2}$$ S/cm with increasing the fluence up to 4$$times$$10$$^{13}$$/cm$$^{2}$$, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 3$$times$$10$$^{16}$$/cm$$^{2}$$ (7 dpa). The dpa of 100 MeV Xe at 4$$times$$10$$^{13}$$/cm$$^{2}$$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Modification of optical properties of silicon nitride films on Si(100) by ion beams

Shinde, N.*; Matsunami, Noriaki*; Tazawa, Masato*; Sataka, Masao; Chimi, Yasuhiro

Transactions of the Materials Research Society of Japan, 31(3), p.709 - 712, 2006/09

no abstracts in English

Journal Articles

Ion beam modification of ZnO thin films on MgO

Matsunami, Noriaki*; Ito, Masaharu*; Takai, Yoshiaki*; Tazawa, Masato*; Sataka, Masao

Nuclear Instruments and Methods in Physics Research B, 206, p.282 - 286, 2003/05

https://doi.org/10.1016/S0168-583X(03)00745-6
 Times Cited Count：23 Percentile：80.61(Instruments & Instrumentation)

no abstracts in English

Oral presentation

Grain-orientation alighnment in polycrystallin-SiO$$_{2}$$ films by high-energy ion irradiation

Shinde, N.*; Matsunami, Noriaki*; Shimura, Tetsuo*; Sataka, Masao; Okayasu, Satoru; Tazawa, Masato*

no journal, , 

no abstracts in English

Oral presentation

Ion irradiation effects on Cu$$_{3}$$N films and phase separation

Matsunami, Noriaki*; Kakiuchida, Hiroshi*; Tazawa, Masato*; Sataka, Masao; Okayasu, Satoru; Sugai, Hiroyuki

no journal, , 

no abstracts in English

8 (Records 1-8 displayed on this page)
  • 1