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Journal Articles

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi*; Yoshihara, Kazuki*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 53(4S), p.04EP09_1 - 04EP09_5, 2014/04

https://doi.org/10.7567/JJAP.53.04EP09

Times Cited Count：6 Percentile：26.85(Physics, Applied)

Journal Articles

Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC

Miyake, Keiko*; Yasuda, Tomonari*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 778-780, p.503 - 506, 2014/02

Journal Articles

Excess carrier lifetime in p-type 4H-SiC epilayers with and without low-energy electron irradiation

Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 51(2), p.028006_1 - 028006_2, 2012/02

https://doi.org/10.1143/JJAP.51.028006

Times Cited Count：16 Percentile：55.56(Physics, Applied)

Excess carrier lifetimes in as-grown and low-energy electron irradiated p-type 4H-SiC epitaxial layers were investigated using the microwave photoconductivity decay method. The carrier lifetime increased with increasing excitation density in the epilayers. This results suggests that the dominant recombination center in the epilayers has larger capture cross section for electrons than capture cross section for holes. The carrier lifetime in the epilayer decreased by the low-energy electron irradiation decreases. The decrease in lifetime in the electron irradiated samples showed recovery after annealing at 1000 $^{circ}$ C.

Journal Articles

Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method

Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Materials Science Forum, 645-648, p.207 - 210, 2010/00

Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay (-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 110 $^{16}$ cm $^{-2}$ (ele-16) and 110 $^{17}$ cm $^{-2}$ (ele-17). As a results of -PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 s, 0.07 s and 0.04 s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.