Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo
Japanese Journal of Applied Physics, 55(4S), p.04EJ04_1 - 04EJ04_4, 2016/04
Times Cited Count：5 Percentile：24.79(Physics, Applied)Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo; Hu, W.*
Crystal Growth & Design, 15(10), p.4979 - 4985, 2015/10
Times Cited Count：14 Percentile：69.21(Chemistry, Multidisciplinary)Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
Times Cited Count：5 Percentile：42.72(Crystallography)Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*
Journal of Physics; Conference Series, 425(20), p.202010_1 - 202010_4, 2013/03
Times Cited Count：1 Percentile：53.29(Instruments & Instrumentation)Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu
Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10
Times Cited Count：12 Percentile：72.05(Chemistry, Multidisciplinary)Proessdorf, A.*; Rodenbach, P.*; Grosse, F.*; Hanke, M.*; Braun, W.*; Riechert, H.*; Hu, W.; Fujikawa, Seiji*; Kozu, Miwa; Takahashi, Masamitsu
Surface Science, 606(17-18), p.1458 - 1461, 2012/09
Times Cited Count：1 Percentile：5.01(Chemistry, Physical)
X-ray characterization of wurtzite formation in GaAs nanowiresKrogstrup, P.*; Morten Hannibal, M.*; Hu, W.; Kozu, Miwa*; Nakata, Yuka*; Nygard, J.*; Takahashi, Masamitsu; Feidenhans'l, R.*
Applied Physics Letters, 100(9), p.093103_1 - 093103_4, 2012/02
Times Cited Count：43 Percentile：83.29(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Times Cited Count：5 Percentile：22.57(Energy & Fuels)Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Suzuki, Hidetoshi*; Sasaki, Takuo*
no journal, ,
Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu
no journal, ,
Recently, low-dimensional structures of semiconductors have attracted much attention because of their possible novel functions originating from quantum size effects. It has been shown that free-standing semiconductor nanowires can be grown on the (111) surface of silicon and the (111)B surface of III-V semiconductors by the vapor-liquid-solid growth technique in which metal particles, such as Au, Ni and Fe, serve as catalysts. Semiconductor nanowires of GaAs and InAs are known to adopt the wurtzite structure rather than than zincblende structure which is the normal structure in their bulk crystals. In the present study, we have performed in situ X-ray diffraction study of GaAs nanowire growth on GaAs(111)B with Au catalyst. Experiments were carried out using a psic-type X-ray diffractometer integrated with an MBE chamber at BL11XU. With increasing deposition amount of GaAs, the structure of GaAs nanowires was found to transform from the zincblende to the wurtzite.
Takahashi, Masamitsu; Hu, W.; Kozu, Miwa*; Sasaki, Takuo*; Oshita, Yoshio*; Suzuki, Hidetoshi*
no journal, ,
Growth dynamics of semiconductor nanostructures ranging from quantum wells to quantum dots will be discussed on the basis of in situ X-ray diffraction. Experiments were performed using a molecular-beam epitaxy (MBE) chamber integrated with an X-ray difftactometer at 11XU of SPring-8. First, of all the nanostructures, quantum wells are playing the most important roles in technological applications today. For in situ study of growth of quantum wells, we have developed a real time X-ray technique enabling three-dimensional reciprocal space mapping during growth and applied it for the investigation of InGaAs growth on GaAs(001). Second, quantum wires are recently attracting much interest because of their extremely anisotropic one-dimensional shape. In this paper, we will present in situ X-ray diffraction data during the As-assisted vapor-liquid-solid growth of GaAs nanowires. Finally, the growth of quantum dots, which are the ultimate quantum structure, will be discussed as well.
Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu
no journal, ,
Kozu, Miwa*; Hu, W.; Takahashi, Masamitsu
no journal, ,
no abstracts in English
Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*
no journal, ,
Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, 
, and growth time, 
, were found to follow 
in accordance with the growth limited by the binding of Ga with As at step edges.
Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu
no journal, ,
Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*
no journal, ,
Kozu, Miwa; Hu, W.; Nakata, Yuka*; Takahashi, Masamitsu
no journal, ,
no abstracts in English
Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Oshita, Yoshio*
no journal, ,
Kozu, Miwa; Takahashi, Masamitsu; Hu, W.; Nakata, Yuka*
no journal, ,
no abstracts in English
Takahashi, Masamitsu; Kozu, Miwa; Hu, W.; Nakata, Yuka*
no journal, ,
no abstracts in English
