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X-ray diffractionShimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
Times Cited Count：9 Percentile：38.07(Physics, Applied)Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
Times Cited Count：2 Percentile：8.93(Physics, Applied)Imaizumi, Tomomi; Miyauchi, Masaru; Ito, Masayasu; Watahiki, Shunsuke; Nagata, Hiroshi; Hanakawa, Hiroki; Naka, Michihiro; Kawamata, Kazuo; Yamaura, Takayuki; Ide, Hiroshi; et al.
JAEA-Technology 2011-031, 123 Pages, 2012/01
JAEA-Technology-2011-031.pdf:16.08MB
The number of research reactors in the world is decreasing because of their aging. However, the planning to introduce the nuclear power plants is increasing in Asian countries. In these Asian countries, the key issue is the human resource development for operation and management of nuclear power plants after constructed them, and also the necessity of research reactor, which is used for lifetime extension of LWRs, progress of the science and technology, expansion of industry use, human resources training and so on, is increasing. From above backgrounds, the Neutron Irradiation and Testing Reactor Center began to discuss basic concept of a multipurpose low-power research reactor for education and training, etc. This design study is expected to contribute not only to design tool improvement and human resources development in the Neutron Irradiation and Testing Reactor Center but also to maintain and upgrade the technology on research reactors in nuclear power-related companies. This report treats the activities of the working group from July 2010 to June 2011 on the multipurpose low-power research reactor in the Neutron Irradiation and Testing Reactor Center and nuclear power-related companies.
Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Times Cited Count：5 Percentile：22.57(Energy & Fuels)Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
Times Cited Count：12 Percentile：46.71(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
Times Cited Count：20 Percentile：82.16(Crystallography)Growth temperature dependence of strain relaxation during In![$$_{0.12}]$$](/search/images/ERPXWMBOGEZH0XJE.gif)
Ga
As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 
C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.
Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
Times Cited Count：32 Percentile：75.03(Physics, Applied)
real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanismsSasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07
Times Cited Count：34 Percentile：75.93(Physics, Applied)