ZnO as fast scintillators evaluated with Ni-like Ag laser

Furukawa, Yusuke*; Tanaka, Momoko; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nishimura, Hiroaki*; Mima, Kunioki*; Kagamitani, Yuji*; et al.

Reza Kenkyu, 36(APLS), p.1028 - 1030, 2008/12

https://doi.org/10.2184/lsj.36.1028

Optical technologies in extreme ultraviolet (EUV) region have been receiving strong interests for the next generation lithography. Here we report properties of ZnO as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The ZnO sample was irradiated with EUV laser pulses and the fluorescence was measured using a streak camera fitted with a spectrograph. A clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. The prominent peak fluorescence is ideal for EUV detection and further applications including imaging.

Evaluation of fast EUV scintillator using 13.9 nm X-ray laser

Tanaka, Momoko; Furukawa, Hiroyuki*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; Kagamitani, Yuji*; Ehrentraut, D.*; et al.

Journal of Physics; Conference Series, 112(4), p.042058_1 - 042058_4, 2008/00

https://doi.org/10.1088/1742-6596/112/4/042058

Optical technologies in the extreme ultraviolet (EUV) region have been receiving strong interest for the next generation lithography. Efficient and fast scintillators are one of the key devices functioning in the EUV region. In this paper, we report excellent properties of ZnO and GaN as scintillators in the EUV region, and to demonstrate the feasibility of using a Ni-like Ag EUV laser operated at 13.9-nm to evaluate these properties. The sample was irradiated with EUV laser pulses, and the fluorescence spectrum and the fluorescence lifetime were measured using a streak camera fitted with a spectrograph. In the case of ZnO, a clear, excitonic, fluorescence peak was observed at around 380 nm with a decay lifetime of 3 ns. For GaN, a fluorescence peak at 370 nm having slower 5-ns decay time was observed. In this respect, the EUV scintillation properties of ZnO is said to be more favorable than GaN.

Diagnostics system of JT-60U

Sugie, Tatsuo; Hatae, Takaki; Koide, Yoshihiko; Fujita, Takaaki; Kusama, Yoshinori; Nishitani, Takeo; Isayama, Akihiko; Sato, Masayasu; Shinohara, Koji; Asakura, Nobuyuki; et al.

Fusion Science and Technology (JT-60 Special Issue), 42(2-3), p.482 - 511, 2002/09

https://doi.org/10.13182/FST02-A242

The diagnostic system of JT-60U (JT-60upgrade) is composed of about 50 individual diagnostic devices. Recently, the detailed radial profile measurements of plasma parameters have been improved, so that the internal structure of plasmas has been explored. The understanding of plasma confinement has been enhanced by density and temperature fluctuation measurements using a mm-wave reflectometer and electron cyclotron emission measurements respectively. In addition, the real-time control experiments of electron density, neutron yield, radiated power and electron temperature gradient have been carried out successfully by corresponding diagnostic devices. These measurements and the real time control contribute to improving plasma performance. Diagnostic devices for next generation fusion devices such as a CO2 laser interferometer/polarimeter and a CO2 laser collective Thomson scattering system have been developed.

Examination on the safety criteria in safety assessment of fuel and core of the High Temperature Engineering Test Reactor(HTTR) under abnormal conditions

Hayashi, Kimio; Shiozawa, Shusaku; Shindo, Masami; Iyoku, Tatsuo; *; Kikuchi, Takayuki; Sawa, Kazuhiro; Nakagawa, Shigeaki; Kashimura, Satoru; ; et al.

JAERI-M 91-140, 61 Pages, 1991/09

JAERI-M-91-140.pdf:2.38MB

no abstracts in English

Photoluminescence of ZnO by EUV laser

Furukawa, Yusuke*; Murakami, Hidetoshi*; Saito, Shigeki*; Sarukura, Nobuhiko*; Nishimura, Hiroaki*; Mima, Kunioki*; Tanaka, Momoko; Nishikino, Masaharu; Yamatani, Hiroshi; Nagashima, Keisuke; et al.

no journal, , 

Zinc oxide (ZnO) has previously been reported to be a potential light-emitting diode materia. We measured the time-resolved emission spectrum of a ZnO crystal for extreme ultraviolet (EUV) laser excitation at 13.9 nm wavelength and compared with UV excitation case. The emission lifetime was determined to be 2.6 ns. This value was not changed even for ultraviolet laser excitation. In the context of the nanosecond regime in the EUV region, ZnO crystal promises to be a feasible scintillation material.