Development of 3-terminal photo-device of nitride semiconductor implanted rare-earth elements by ion-implantation

Okada, Hiroshi*; Takemoto, Kazumasa*; Shimojo, Takashi*; Hata, Takayuki*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Electrical- and emission- characteristics dependence on ion implantation conditions of Eu-doped light emitting AlGaN/GaN HEMT

Hata, Takayuki*; Okada, Hiroshi*; Wakahara, Akihiro*; Furukawa, Yuzo*; Sato, Shinichiro; Oshima, Takeshi

no journal, , 

Study of ion-implantation condition effects for AlGaN/GaN-based light emitting device

Okada, Hiroshi*; Hata, Takayuki*; Kondo, Masaki*; Furukawa, Yuzo*; Wakahara, Akihiro*; Oshima, Takeshi; Sato, Shinichiro

no journal, , 

no abstracts in English