Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Ohshima, Hiroyuki; Morishita, Masaki*; Aizawa, Kosuke; Ando, Masanori; Ashida, Takashi; Chikazawa, Yoshitaka; Doda, Norihiro; Enuma, Yasuhiro; Ezure, Toshiki; Fukano, Yoshitaka; et al.
Sodium-cooled Fast Reactors; JSME Series in Thermal and Nuclear Power Generation, Vol.3, 631 Pages, 2022/07
This book is a collection of the past experience of design, construction, and operation of two reactors, the latest knowledge and technology for SFR designs, and the future prospects of SFR development in Japan. It is intended to provide the perspective and the relevant knowledge to enable readers to become more familiar with SFR technology.
Hayakawa, Ryoma*; Nakae, Mari*; Yoshimura, Takeshi*; Ashida, Atsushi*; Fujimura, Norifumi*; Uehara, Tsuyoshi*; Tagawa, Masahito*; Teraoka, Yuden
Journal of Applied Physics, 100(7), p.073710_1 - 073710_8, 2006/10
Times Cited Count：13 Percentile：42.51(Physics, Applied)A structural analysis and dielectric property measurements of silicon nitride films fabricated using atmospheric pressure (AP) plasma were carried out, and the results were compared to a radio frequency (RF) plasma case. Using AP plasma, 1.8-nm-thick films composed of Si
N
O
were obtained in the temperature range from 298 to 773 K. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry revealed 10% more nitrogen atoms corresponding to the NSi bond in the film using AP plasma than those using RF plasma. In the temperature range, the leakage current densities were not affected by the temperature. Films fabricated at 298 K showed leakage current density of as low as 7
10
A/cm
at 5MV/cm. This value was one order of magnitude lower than that using RF plasma.
