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Fujimori, Kosuke*; Kitaura, Mamoru*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Watanabe, Shinta*; Kamada, Kei*; Okano, Yasuaki*; Kato, Masahiro*; Hosaka, Masahito*; et al.
Applied Physics Express, 13(8), p.085505_1 - 085505_4, 2020/08
Times Cited Count:5 Percentile:33.01(Physics, Applied)To clarify the existence of cation vacancies in Ce-doped GdAlGaO (Ce:GAGG) scintillators, we performed gamma-ray-induced positron annihilation lifetime spectroscopy (GiPALS). GiPAL spectra of GAGG and Ce:GAGG comprised two exponential decay components, which were assigned to positron annihilation at bulk and defect states. By an analogy with Ce:YAlO, the defect-related component was attributed to Al/Ga-O divacancy complexes. This component was weaker for Ce, Mg:GAGG, which correlated with the suppression of shallow electron traps responsible for phosphorescence. Oxygen vacancies were charge compensators for Al/Ga vacancies. The lifetime of the defect-related component was significantly changed by Mg co-doping. This was understood by considering aggregates of Mg ions at Al/Ga sites with oxygen vacancies, which resulted in the formation of vacancy clusters.
Taira, Yoshitaka*; Fujimoto, Masaki*; Fujimori, Kosuke*; Kitaura, Mamoru*; Zen, H.*; Okano, Yasuaki*; Hosaka, Masahito*; Yamazaki, Junichiro*; Kato, Masahiro*; Hirade, Tetsuya; et al.
no journal, ,
For general positron sources, radioisotopes such as Na are often used. However, there is a problem that positrons cannot probe the deep region of metal materials with a thickness of 1 mm or more. Gamma-ray induced positron annihilation lifetime measurement (GiPALS) is a method for generating positrons in bulk samples with a thickness of several centimeters and samples placed in vessels such as high temperature and/or pressure furnaces. The annihilation lifetime of positrons is about 200 ps for metal materials, so it is important to use gamma rays with a shorter pulse width for GiPALS in order to accurately measure the positron lifetime. We have succeeded in the proof-of-principle experiment for GiPALS of ultra-short pulse gamma rays with a pulse width of 2 ps, which was originally developed using 90 collision laser Compton scattering at UVSOR.
Taira, Yoshitaka*; Fujimoto, Masaki*; Fujimori, Kosuke*; Kitaura, Mamoru*; Zen, H.*; Okano, Yasuaki*; Hosaka, Masahito*; Yamazaki, Junichiro*; Kato, Masahiro*; Hirade, Tetsuya; et al.
no journal, ,
For general positron sources, radioisotopes such as Na are often used. However, there is a problem that positrons cannot probe the deep region of metal materials with a thickness of 1 mm or more. Gamma-ray induced positron annihilation lifetime measurement (GiPALS) is a method for generating positrons in bulk samples with a thickness of several centimeters and samples placed in vessels such as high temperature and/or pressure furnaces. The annihilation lifetime of positrons is about 200 ps for metal materials, so it is important to use gamma rays with a shorter pulse width for GiPALS in order to accurately measure the positron lifetime. We have succeeded in the proof-of-principle experiment for GiPALS of ultra-short pulse gamma rays with a pulse width of 2 ps, which was originally developed using 90 collision laser Compton scattering at UVSOR.
Kitaura, Mamoru*; Fujimori, Kosuke*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Hirade, Tetsuya; Kamada, Kei*; Watanabe, Shinta*; Onishi, Akimasa*
no journal, ,
Positron annihilation spectroscopy is the only way to investigate the properties of cation vacancies because they are negatively charged. We generated high-energy pulsed gamma rays by the vertical collision of an ultrashort pulse laser and electron beam. In this study, we investigated the vacancy-type defects present in the crystals of GAGG(GdAlGaO), GAGG: Ce and GAGG: Ce, Mg by positron annihilation lifetime spectroscopy using the high-energy gamma rays. The lifetime of the defect-related component was significantly changed by Mg co-doping. This was understood by considering aggregates of Mg ions at Al/Ga sites with oxygen vacancies, which resulted in the formation of vacancy clusters.
Fujimori, Kosuke*; Kitaura, Mamoru*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Hirade, Tetsuya; Kamada, Kei*; Watanabe, Shinta*; Onishi, Akimasa*
no journal, ,
We generated high-energy pulsed gamma rays by the vertical collision of an ultrashort pulse laser and electron beam. In this study, we investigated the vacancy-type defects present in the crystals of GAGG(GdAlGaO), GAGG: Ce and GAGG: Ce, Mg by positron annihilation lifetime spectroscopy using the high-energy gamma rays. The lifetime of the defect-related component was significantly changed by Mg co-doping. This indicates that the Al/Ga vacancies disappear. This fact corresponds well with the suppression of the phosphorescence component and is an important result showing that the Mg co-doping is effective in suppressing the shallow electron capture center.