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Kajita, Shin; Ono, Noriyasu*; Takamura, Shuichi*; Sakaguchi, Wataru*; Nishijima, Dai*
Applied Physics Letters, 91(26), p.261501_1 - 261501_3, 2007/12
Times Cited Count：41 Percentile：79.53(Physics, Applied)Nanosecond laser ablation of tungsten (W) that was exposed to helium plasmas was investigated using optical emission spectroscopy. Sub-micrometor holes/bubbles are formed on the surface of W specimen when it was exposed to the helium plasma at sufficient higher temperature (
1500-1600 K). The onset pulse energy to detect W I becomes 
0.2 J/cm
after the W specimen was exposed to high-density helium plasmas, though the emission from a pure virgin W (before helium plasma irradiation) cannot be detected when the pulse energy was lower than 1 J/cm. Laser-induced bursting of the holes/bubbles is suggested to be the physical mechanism leading to the significant reduction in the ablation power threshold.
Nishijima, Toshiji*; Hearne, S. M.*; Jamieson, D. N.*; Oshima, Takeshi; Lee, K. K.; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.196 - 200, 2003/09
Times Cited Count：1 Percentile：12.48(Instruments & Instrumentation)The radiation damage in silicon carbide (SiC) schottky diode was studied using ion beam induced current (IBIC). Schottky diodes with electrodes of 30 
m on n- or p-type 6H-SiC were fabricated using the evaporation of Al, Ni, and Au. To study the radiation damage of diodes, the 2MeV-He ion micro beam with a diameter of 1 m was irradiated from 10
to 10
/cm
into a 10 m 
10 m area. As the result, the value of IBIC decreased with increasing the dose of 2 MeV-He. This indicates that the charge collection decreases by the recombination centers introduced by irradiation.
Nishijima, Toshiji*; Oshima, Takeshi; Lee, K. K.
Nuclear Instruments and Methods in Physics Research B, 190(1-4), p.329 - 334, 2002/05
Times Cited Count：11 Percentile：58.04(Instruments & Instrumentation)no abstracts in English
Kato, Takashi; Tsuji, Hiroshi; Ando, Toshinari; Takahashi, Yoshikazu; Nakajima, Hideo; Sugimoto, Makoto; Isono, Takaaki; Koizumi, Norikiyo; Kawano, Katsumi; Oshikiri, Masayuki*; et al.
Fusion Engineering and Design, 56-57, p.59 - 70, 2001/10
Times Cited Count：17 Percentile：74.75(Nuclear Science & Technology)no abstracts in English
Lee, K. K.; Nishijima, Toshiji*; Oshima, Takeshi; Jamieson, D. N.*
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.324 - 328, 2001/07
Times Cited Count：5 Percentile：38.96(Instruments & Instrumentation)Investigation of oxide charge trapping and interface state generation in SiO
grown on 6H-SiC was performed using ion beam induced charge (IBIC), electroluminescence (EL) and the high frequency capacitance-voltage (CV) method. A large flatband voltage shift in CV measurements indicated a high density of positive charges trapped near the SiC/SiO interface. These trapped charges were related to defects either existing in the oxide or generated during alpha particle irradiation. EL indicated trap levels at 1.36, 1.6, 2.3 and 2.9 eV. Levels at 1.36 and 2.3 eV are defects existing in the SiC substrate, while the other two remaining levels are due to defects in the oxide. These defects affected the radiation hardness of SiC electronic devices. Oxide rupture caused by alpha particle irradiation of the metal-oxide-p-type SiC device is observed.
Tsuji, Hiroshi; Okuno, Kiyoshi*; Thome, R.*; Salpietro, E.*; Egorov, S. A.*; Martovetsky, N.*; Ricci, M.*; Zanino, R.*; Zahn, G.*; Martinez, A.*; et al.
Nuclear Fusion, 41(5), p.645 - 651, 2001/05
Times Cited Count：57 Percentile：83.45(Physics, Fluids & Plasmas)no abstracts in English
Ando, Toshinari; Hiyama, Tadao; Takahashi, Yoshikazu; Nakajima, Hideo; Kato, Takashi; Isono, Takaaki; Sugimoto, Makoto; Kawano, Katsumi; Koizumi, Norikiyo; Nunoya, Yoshihiko; et al.
IEEE Transactions on Applied Superconductivity, 10(1), p.568 - 571, 2000/03
Times Cited Count：10 Percentile：53.49(Engineering, Electrical & Electronic)no abstracts in English
Sn conductor joint for ITER model coilsTakahashi, Yoshikazu; Nunoya, Yoshihiko; Nishijima, Gen; Koizumi, Norikiyo; Matsui, Kunihiro; Ando, Toshinari; Hiyama, Tadao; Nakajima, Hideo; Kato, Takashi; Isono, Takaaki; et al.
IEEE Transactions on Applied Superconductivity, 10(1), p.580 - 583, 2000/03
Times Cited Count：20 Percentile：68.87(Engineering, Electrical & Electronic)no abstracts in English
Ando, Toshinari; Hiyama, Tadao; Takahashi, Yoshikazu; Nakajima, Hideo; Kato, Takashi; Sugimoto, Makoto; Isono, Takaaki; Kawano, Katsumi; Koizumi, Norikiyo; Hamada, Kazuya; et al.
IEEE Transactions on Applied Superconductivity, 9(2), p.628 - 631, 1999/06
Times Cited Count：8 Percentile：51.48(Engineering, Electrical & Electronic)no abstracts in English
