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Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*
AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03
Times Cited Count:4 Percentile:20.15(Nanoscience & Nanotechnology)Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
Times Cited Count:9 Percentile:38.29(Physics, Applied)Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Journal of Crystal Growth, 425, p.13 - 15, 2015/09
Times Cited Count:3 Percentile:29.6(Crystallography)Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
Times Cited Count:0 Percentile:0.01Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
Times Cited Count:5 Percentile:42.85(Crystallography)Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu
Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10
Times Cited Count:12 Percentile:72.14(Chemistry, Multidisciplinary)Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
Times Cited Count:2 Percentile:8.97(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Times Cited Count:5 Percentile:22.66(Energy & Fuels)Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
Times Cited Count:12 Percentile:46.82(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
Times Cited Count:19 Percentile:82.22(Crystallography)Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.
Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
Times Cited Count:32 Percentile:75.12(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*
Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05
Times Cited Count:0 Percentile:0.01Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07
Times Cited Count:34 Percentile:76.03(Physics, Applied)Saito, Kimiaki; Teshima, Naoya; Suzuki, Yoshio; Nakajima, Norihiro; Saito, Hidetoshi*; Kunieda, Etsuo*; Fujisaki, Tatsuya*
FUJITSU Famirikai Rombunshu (Internet), 20 Pages, 2009/02
We research and develop IMAGINE as the dose calculation system, which can calculate the dose distribution in the patient body very fast and with high precision by a super parallel calculation, for the contribution to QoS of the radiation therapy and the development of the eading-edge treatment technology. When IMAGINE system will be actually operated, it is anticipated that IMAGINE system accepts the large amount of requests of the dose calculation from several radiotherapy facilities at the same time. So, we entertained that the dose calculation was distributed by the gridization of IMAGINE system and the waiting time of its was minimized. In this article, we introduce the problem about the gridization of IMAGINE system, the solution to it and the method to easily enable the gridization of the application without the programming skill.
Sawada, Shinichi; Yamaki, Tetsuya; Nishimura, Hidetoshi*; Asano, Masaharu; Suzuki, Akihiro*; Terai, Takayuki*; Maekawa, Yasunari
Solid State Ionics, 179(27-32), p.1611 - 1614, 2008/09
Times Cited Count:13 Percentile:50.73(Chemistry, Physical)We measured the self-diffusion coefficient of water, D, in proton exchange membranes (PEMs) based on crosslinked polytetrafluoroethylene (PTFE) films by a radiotracer-permeation method using tritium labeled water (HTO). When the crosslinking density of the PTFE matrix increased, the D value became smaller. This decreasing trend coincided with that of a water-content parameter, , defined as the number of water molecules per sulfonic acid (SOH) group. According to the model assumption of hydrophilic regions, the relationship between the D and indicates that the amount of free water in the crosslinked-PTFE PEMs could be lower than that in the non-crosslinked one, thereby restricting the mobility of water molecules through strong interactions between the majority of water and SOH groups.
Hoshino, Tsuyoshi; Yasumoto, Masaru*; Tsuchiya, Kunihiko; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*
Fusion Engineering and Design, 82(15-24), p.2269 - 2273, 2007/10
Times Cited Count:50 Percentile:94.87(Nuclear Science & Technology)no abstracts in English
Hoshino, Tsuyoshi; Yasumoto, Masaru*; Tsuchiya, Kunihiko; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*
Fusion Engineering and Design, 81(1-7), p.555 - 559, 2006/02
Times Cited Count:17 Percentile:74.73(Nuclear Science & Technology)no abstracts in English
Suzuki, Masaaki*; Sekiguchi, Hidetoshi*; Akatsuka, Hiroshi*; Goto, Takanobu*; Osugi, Takeshi*; Kobayashi, Hiroaki; Nakazawa, Osamu
JNC TY8400 2002-016, 158 Pages, 2002/03
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Hoshino, Tsuyoshi; Tsuchiya, Kunihiko; Hayashi, Kimio; Yasumoto, Masaru*; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*
no journal, ,
no abstracts in English
Sato, Kosuke*; Hoshino, Tsuyoshi; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*
no journal, ,
no abstracts in English