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Journal Articles

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

 Times Cited Count:4 Percentile:20.15(Nanoscience & Nanotechnology)

Journal Articles

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using ${{it in situ}}$ X-ray diffraction

Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*

Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11

 Times Cited Count:9 Percentile:38.29(Physics, Applied)

Journal Articles

${it In situ}$ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 425, p.13 - 15, 2015/09

 Times Cited Count:3 Percentile:29.6(Crystallography)

Journal Articles

Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

AIP Conference Proceedings 1556, p.14 - 17, 2013/09

 Times Cited Count:0 Percentile:0.01

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:42.85(Crystallography)

Journal Articles

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10

 Times Cited Count:12 Percentile:72.14(Chemistry, Multidisciplinary)

Journal Articles

Observation of in-plane asymmetric strain relaxation during crystal growth and growth interruption in InGaAs/GaAs(001)

Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02

 Times Cited Count:2 Percentile:8.97(Physics, Applied)

Journal Articles

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

 Times Cited Count:5 Percentile:22.66(Energy & Fuels)

Journal Articles

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*

Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12

 Times Cited Count:12 Percentile:46.82(Physics, Applied)

Journal Articles

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

 Times Cited Count:19 Percentile:82.22(Crystallography)

Growth temperature dependence of strain relaxation during In$$_{0.12}]$$Ga$$_{0.88}$$As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 $$^{circ}$$C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

Journal Articles

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs(001) growth

Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji

Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07

 Times Cited Count:32 Percentile:75.12(Physics, Applied)

Journal Articles

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

 Times Cited Count:0 Percentile:0.01

Journal Articles

${it In situ}$ real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07

 Times Cited Count:34 Percentile:76.03(Physics, Applied)

Journal Articles

Gridization of IMAGINE, dose calculation system, for the remote assistance of radiation therapy

Saito, Kimiaki; Teshima, Naoya; Suzuki, Yoshio; Nakajima, Norihiro; Saito, Hidetoshi*; Kunieda, Etsuo*; Fujisaki, Tatsuya*

FUJITSU Famirikai Rombunshu (Internet), 20 Pages, 2009/02

We research and develop IMAGINE as the dose calculation system, which can calculate the dose distribution in the patient body very fast and with high precision by a super parallel calculation, for the contribution to QoS of the radiation therapy and the development of the eading-edge treatment technology. When IMAGINE system will be actually operated, it is anticipated that IMAGINE system accepts the large amount of requests of the dose calculation from several radiotherapy facilities at the same time. So, we entertained that the dose calculation was distributed by the gridization of IMAGINE system and the waiting time of its was minimized. In this article, we introduce the problem about the gridization of IMAGINE system, the solution to it and the method to easily enable the gridization of the application without the programming skill.

Journal Articles

Water transport properties of crosslinked-PTFE based electrolyte membranes

Sawada, Shinichi; Yamaki, Tetsuya; Nishimura, Hidetoshi*; Asano, Masaharu; Suzuki, Akihiro*; Terai, Takayuki*; Maekawa, Yasunari

Solid State Ionics, 179(27-32), p.1611 - 1614, 2008/09

 Times Cited Count:13 Percentile:50.73(Chemistry, Physical)

We measured the self-diffusion coefficient of water, D, in proton exchange membranes (PEMs) based on crosslinked polytetrafluoroethylene (PTFE) films by a radiotracer-permeation method using tritium labeled water (HTO). When the crosslinking density of the PTFE matrix increased, the D value became smaller. This decreasing trend coincided with that of a water-content parameter, $$lambda$$, defined as the number of water molecules per sulfonic acid (SO$$_{3}$$H) group. According to the model assumption of hydrophilic regions, the relationship between the D and $$lambda$$ indicates that the amount of free water in the crosslinked-PTFE PEMs could be lower than that in the non-crosslinked one, thereby restricting the mobility of water molecules through strong interactions between the majority of water and SO$$_{3}$$H groups.

Journal Articles

Non-stoichiometory and vaporization characteristic of Li$$_{2.1}$$TiO$$_{3.05}$$ in hydrogen atmosphere

Hoshino, Tsuyoshi; Yasumoto, Masaru*; Tsuchiya, Kunihiko; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*

Fusion Engineering and Design, 82(15-24), p.2269 - 2273, 2007/10

 Times Cited Count:50 Percentile:94.87(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Vapor species evolved from Li$$_{2}$$TiO$$_{3}$$ heated at high temperature under various conditions

Hoshino, Tsuyoshi; Yasumoto, Masaru*; Tsuchiya, Kunihiko; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*

Fusion Engineering and Design, 81(1-7), p.555 - 559, 2006/02

 Times Cited Count:17 Percentile:74.73(Nuclear Science & Technology)

no abstracts in English

JAEA Reports

Direct vitrification of chloride waste by oxygen plasma

Suzuki, Masaaki*; Sekiguchi, Hidetoshi*; Akatsuka, Hiroshi*; Goto, Takanobu*; Osugi, Takeshi*; Kobayashi, Hiroaki; Nakazawa, Osamu

JNC TY8400 2002-016, 158 Pages, 2002/03

JNC-TY8400-2002-016.pdf:15.93MB

None

Oral presentation

Vaporization properties and non-stoichiometry of Li$$_{2+x}$$TiO$$_{3+y}$$

Hoshino, Tsuyoshi; Tsuchiya, Kunihiko; Hayashi, Kimio; Yasumoto, Masaru*; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*

no journal, , 

no abstracts in English

Oral presentation

In-situ tritium release experiment from Li$$_{2}$$TiO$$_{3}$$ sintered pellets at high temperature

Sato, Kosuke*; Hoshino, Tsuyoshi; Hayashi, Kimio; Nishimura, Hidetoshi*; Suzuki, Akihiro*; Terai, Takayuki*

no journal, , 

no abstracts in English

27 (Records 1-20 displayed on this page)