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Journal Articles

Measurement of the transverse asymmetry of $$gamma$$ rays in the $$^{117}$$Sn($$n,gamma$$)$$^{118}$$Sn reaction

Endo, Shunsuke; Okudaira, Takuya*; Abe, Ryota*; Fujioka, Hiroyuki*; Hirota, Katsuya*; Kimura, Atsushi; Kitaguchi, Masaaki*; Oku, Takayuki; Sakai, Kenji; Shima, Tatsushi*; et al.

Physical Review C, 106(6), p.064601_1 - 064601_7, 2022/12

 Times Cited Count:3 Percentile:49.92(Physics, Nuclear)

no abstracts in English

Journal Articles

Competing spin modulations in the magnetically frustrated semimetal EuCuSb

Takahashi, Hidefumi*; Aono, Kai*; Nambu, Yusuke*; Kiyanagi, Ryoji; Nomoto, Takuya*; Sakano, Masato*; Ishizaka, Kyoko*; Arita, Ryotaro*; Ishiwata, Shintaro*

Physical Review B, 102(17), p.174425_1 - 174425_6, 2020/11

 Times Cited Count:9 Percentile:52.47(Materials Science, Multidisciplinary)

The competing magnetic ground states of the itinerant magnet EuCuSb, which has a hexagonal layered structure, were studied via magnetization, resistivity, and neutron-diffraction measurements on single-crystal samples. EuCuSb has a three-dimensional semimetallic band structure as confirmed by band calculation and angle-resolved photoelectron spectroscopy, consistent with the nearly isotropic metallic conductivity in the paramagnetic state. However, below the antiferromagnetic transition temperature of $$T$$$$_{rm N1}$$ (8.5 K), the resistivity, especially along the hexagonal axis, increases significantly. This implies the emergence of anisotropic magnetic ordering coupled to the conducting electrons. Neutron-diffraction measurements show that the Eu spins, which order ferromagnetically within each layer, are collinearly modulated (up-up-down-down) along the hexagonal axis below $$T$$$$_{rm N1}$$, followed by the partial emergence of helical spin modulation below $$T$$$$_{rm N2}$$ (6 K). Based on the observation of anomalous magnetoresistance with hysteretic behavior, we discuss the competing nature of the ground state inherent in a frustrated Heisenberg-like spin system with a centrosymmetric structure.

Journal Articles

Fabrication of Pt nanoparticle incorporated polymer nanowires by high energy ion and electron beam irradiation

Tsukuda, Satoshi*; Takahashi, Ryota*; Seki, Shuhei*; Sugimoto, Masaki; Idesaki, Akira; Yoshikawa, Masahito; Tanaka, Shunichiro*

Radiation Physics and Chemistry, 118, p.16 - 20, 2016/01

 Times Cited Count:1 Percentile:10.6(Chemistry, Physical)

Polyvinylpyrrolidone (PVP)-Pt nanoparticles (NPs) hybrid nanowires were fabricated by high energy ion beam irradiation to PVP thin films including H$$_{2}$$PtCl$$_{6}$$. Single ion hitting caused crosslinking reactions of PVP and reduction of Pt ions within local cylindrical area along an ion trajectory (ion track); therefore, the PVP nanowires including Pt NPs were formed and isolated on Si substrate after wet-development procedure. The number of Pt NPs was easily controlled by the mixed ratio of PVP and H$$_{2}$$PtCl$$_{6}$$. However, increasing the amount of H$$_{2}$$PtCl$$_{6}$$ led to decreasing the radial size and separation of the hybrid nanowires during the wet-development. Additional electron beam irradiation after ion beam improved separation of the nanowires and controlled radial sizes due to an increase in the density of crosslinking points inner the nanowires.

Oral presentation

In situ XRD/SAXS measurements in Au-catalyzed InGaAs nanowires

Sasaki, Takuo; Deki, Ryota*; Nakata, Yuka; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Interfacial structure of InAs epitaxial film grown on Si(111)-(4$$times$$1)-In surface

Nakata, Yuka; Sasaki, Takuo; Deki, Ryota*; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Observation of Au catalyst during nanowire growth by small angle X-ray scattering

Sasaki, Takuo; Deki, Ryota; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Polytypic mechanisms in Au-catalyzed GaAs nanowires

Sasaki, Takuo; Deki, Ryota; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Observation of initial strain in MBE-grown GaN by in situ synchrotron X-ray diffraction

Sasaki, Takuo; Deki, Ryota; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

In situ synchrotron X-ray diffraction during MBE growth of nitride semiconductors

Takahashi, Masamitsu; Sasaki, Takuo; Deki, Ryota*

no journal, , 

no abstracts in English

Oral presentation

In segregation and dislocation mechanisms of InGaAs under Stranski-Krastanow growth

Deki, Ryota*; Sasaki, Takuo; Takahashi, Masamitsu

no journal, , 

no abstracts in English

Oral presentation

Observation of strain relaxation in MBE-grown nitride semiconductors by in situ synchrotron X-ray diffraction

Sasaki, Takuo; Deki, Ryota; Ishikawa, Fumitaro*; Yamaguchi, Tomohiro*; Takahashi, Masamitsu

no journal, , 

no abstracts in English

11 (Records 1-11 displayed on this page)
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