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JAEA Reports

XAFS measurement of simulated waste glass samples (Joint research)

Nagai, Takayuki; Sasage, Kenichi; Okamoto, Yoshihiro; Shiwaku, Hideaki; Yamagishi, Hirona*; Ota, Toshiaki*; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*; Takahashi, Tomoe*; et al.

JAEA-Research 2019-003, 94 Pages, 2019/09

JAEA-Research-2019-003.pdf:7.92MB

The local structures of glass-forming elements and waste elements would change by the chemical composition of waste glass including those elements. In this study, simulated waste glass samples were prepared from borosilicate glass frit including phosphorus (P) or vanadium (V), and we investigated local structures of boron, sodium, and waste elements in these P glass and V glass samples by using synchrotron XAFS measurements in soft and hard X ray region.

JAEA Reports

Investigation of simulated waste glass samples prepared from borosilicate glass frit including vanadium

Nagai, Takayuki; Okamoto, Yoshihiro; Shiwaku, Hideaki; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*; Hirono, Kazuya*; Homma, Masanobu*; Kobayashi, Hiromi*; Takahashi, Tomoe*; et al.

JAEA-Research 2018-007, 87 Pages, 2018/11

JAEA-Research-2018-007.pdf:61.21MB

To select the chemical composition of a glass frit which can increase the waste content, the simulated waste glass samples prepared from a borosilicate glass frit including vanadium (V) were investigated by using Laser Ablation (LA) ICP-AES analysis, Raman spectrometry, and synchrotron XAFS measurement in this study on foundation business of the Agency for Natural Resources and Energy.

Journal Articles

Lanthanides ($$^{151}$$Eu and $$^{155}$$Gd)-M$"o$ssbauer spectroscopic study of defect-fluorite oxides coupled with new defect crystal chemistry model

Nakamura, Akio; Igawa, Naoki; Okamoto, Yoshihiro; Hinatsu, Yukio*; Wang, J.*; Takahashi, Masashi*; Takeda, Masuo*

M$"o$ssbauer Spectroscopy; Applications in Chemistry, Biology, and Nanotechnology, p.71 - 94, 2013/10

Journal Articles

Defect-fluorite oxides; Ln (Eu and Gd) M$"o$ssbauer study coupled with new defect-crystal-chemistry model

Nakamura, Akio; Igawa, Naoki; Okamoto, Yoshihiro; Wang, J.*; Hinatsu, Yukio*; Takahashi, Masashi*; Takeda, Masuo*

Hyperfine Interactions, 217(1-3), p.17 - 26, 2013/04

 Times Cited Count:1 Percentile:52.92

Journal Articles

Suppression of heavy-ion induced current in SOI device

Ogura, Shunta*; Komiyama, Takahiro*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.127 - 129, 2012/12

We have investigated the transient current in a SOI p$$^+$$n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.

Journal Articles

$$^{155}$$Gd M$"o$ssbauer spectroscopic and powder X-ray diffraction study of CeO$$_{2}$$ - GdO$$_{1.5}$$ solid solution

Nakamura, Akio; Imai, Kazutaka*; Igawa, Naoki; Okamoto, Yoshihiro; Yamamoto, Etsuji; Matsukawa, Shiro*; Takahashi, Masashi*

Hyperfine Interactions, 207(1-3), p.67 - 71, 2012/03

 Times Cited Count:4 Percentile:87.16

Journal Articles

Heavy-ion induced current in SOI junction diode

Takahashi, Yoshihiro*; Takeyasu, Hidenori*; Okazaki, Yuji*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.173 - 175, 2010/10

no abstracts in English

Journal Articles

Change in ion beam induced current from Si metal-oxide-semiconductor capacitors after $$gamma$$-ray irradiation

Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*

AIP Conference Proceedings 1099, p.1014 - 1017, 2009/03

Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with $$gamma$$-rays at a dose of 6.3 kGy (SiO$$_{2}$$) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to $$gamma$$-ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.5$$times$$10$$^{11}$$ and 1.7$$times$$10$$^{11}$$/cm$$^{2}$$, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after $$gamma$$-ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after $$gamma$$-ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after $$gamma$$-ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with $$gamma$$-rays can be matched to that for ones before $$gamma$$-rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to $$gamma$$-ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to $$gamma$$-ray irradiation can be interpreted in terms of positive charge generated in oxide.

Journal Articles

Total dose effects on heavy-ion induced gate current in MOS structure

Takahashi, Yoshihiro*; Fugane, Masaru*; Imagawa, Ryo*; Owaki, Akihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi

JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 7, 2008/11

no abstracts in English

Journal Articles

Comparison of the experimental results with simulated results of charge induced in MOS FET by heavy-ion irradiation

Hirao, Toshio; Onoda, Shinobu; Takahashi, Yoshihiro*; Oshima, Takeshi

JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 6, 2008/11

no abstracts in English

Journal Articles

Heavy-ion induced current through an oxide layer

Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.

Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07

 Times Cited Count:4 Percentile:35.75(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Charge collected in Si MOS capacitors and SOI devices p$$^{+}$$n diodes due to heavy ion irradiation

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10

no abstracts in English

Journal Articles

Heavy-ion induced current in MOS structure

Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10

no abstracts in English

Journal Articles

Consideration to reliability of laser testing for evaluating SEU tolerance

Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12

 Times Cited Count:23 Percentile:83.14(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.10 - 15, 1998/00

no abstracts in English

Journal Articles

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

JAERI-Conf 97-003, p.243 - 248, 1997/03

no abstracts in English

46 (Records 1-20 displayed on this page)