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Nagai, Takayuki; Sasage, Kenichi; Okamoto, Yoshihiro; Shiwaku, Hideaki; Yamagishi, Hirona*; Ota, Toshiaki*; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*; Takahashi, Tomoe*; et al.
JAEA-Research 2019-003, 94 Pages, 2019/09
The local structures of glass-forming elements and waste elements would change by the chemical composition of waste glass including those elements. In this study, simulated waste glass samples were prepared from borosilicate glass frit including phosphorus (P) or vanadium (V), and we investigated local structures of boron, sodium, and waste elements in these P glass and V glass samples by using synchrotron XAFS measurements in soft and hard X ray region.
Nagai, Takayuki; Okamoto, Yoshihiro; Shiwaku, Hideaki; Inose, Takehiko*; Sato, Seiichi*; Hatakeyama, Kiyoshi*; Hirono, Kazuya*; Homma, Masanobu*; Kobayashi, Hiromi*; Takahashi, Tomoe*; et al.
JAEA-Research 2018-007, 87 Pages, 2018/11
To select the chemical composition of a glass frit which can increase the waste content, the simulated waste glass samples prepared from a borosilicate glass frit including vanadium (V) were investigated by using Laser Ablation (LA) ICP-AES analysis, Raman spectrometry, and synchrotron XAFS measurement in this study on foundation business of the Agency for Natural Resources and Energy.
Nakamura, Akio; Igawa, Naoki; Okamoto, Yoshihiro; Hinatsu, Yukio*; Wang, J.*; Takahashi, Masashi*; Takeda, Masuo*
Mssbauer Spectroscopy; Applications in Chemistry, Biology, and Nanotechnology, p.71 - 94, 2013/10
Nakamura, Akio; Igawa, Naoki; Okamoto, Yoshihiro; Wang, J.*; Hinatsu, Yukio*; Takahashi, Masashi*; Takeda, Masuo*
Hyperfine Interactions, 217(1-3), p.17 - 26, 2013/04
Times Cited Count:1 Percentile:52.92Ogura, Shunta*; Komiyama, Takahiro*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.127 - 129, 2012/12
We have investigated the transient current in a SOI pn junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.
Nakamura, Akio; Imai, Kazutaka*; Igawa, Naoki; Okamoto, Yoshihiro; Yamamoto, Etsuji; Matsukawa, Shiro*; Takahashi, Masashi*
Hyperfine Interactions, 207(1-3), p.67 - 71, 2012/03
Times Cited Count:4 Percentile:87.16Takahashi, Yoshihiro*; Takeyasu, Hidenori*; Okazaki, Yuji*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.173 - 175, 2010/10
no abstracts in English
Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*
AIP Conference Proceedings 1099, p.1014 - 1017, 2009/03
Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with -rays at a dose of 6.3 kGy (SiO) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to -ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.510 and 1.710/cm, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after -ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after -ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after -ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with -rays can be matched to that for ones before -rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to -ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to -ray irradiation can be interpreted in terms of positive charge generated in oxide.
Takahashi, Yoshihiro*; Fugane, Masaru*; Imagawa, Ryo*; Owaki, Akihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi
JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 7, 2008/11
no abstracts in English
Hirao, Toshio; Onoda, Shinobu; Takahashi, Yoshihiro*; Oshima, Takeshi
JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 6, 2008/11
no abstracts in English
Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.
Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07
Times Cited Count:4 Percentile:35.75(Instruments & Instrumentation)no abstracts in English
Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10
no abstracts in English
Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10
no abstracts in English
Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10
no abstracts in English
Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10
no abstracts in English
Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito
IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12
Times Cited Count:23 Percentile:83.14(Engineering, Electrical & Electronic)no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.10 - 15, 1998/00
no abstracts in English
Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*
JAERI-Conf 97-003, p.243 - 248, 1997/03
no abstracts in English
Onishi, Kazunori*; Takahashi, Yoshihiro*; *; Yoshikawa, Masahito
JAERI-Research 95-090, 40 Pages, 1996/01
no abstracts in English