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Journal Articles

Dislocation networks in conventional and surfactant-mediated Ge/Si(111) epitaxy

Filimonov, S. N.*; Cherepanov, V.*; Paul, N.*; Asaoka, Hidehito; Brona, J.*; Voigtl$"a$nder, B.*

Surface Science, 599(1-3), p.76 - 84, 2005/12

 Times Cited Count:16 Percentile:55.73(Chemistry, Physical)

no abstracts in English

Journal Articles

Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces

Asaoka, Hidehito; Cherepanov, V.*; Voigtl$"a$nder, B.*

Surface Science, 588(1-3), p.19 - 25, 2005/08

 Times Cited Count:24 Percentile:66.99(Chemistry, Physical)

We determined the average size of small Si and Ge clusters con$$cdot$$ned to one half of a (7$$times$$7) or (5$$times$$5) unit cell of a Si or Ge(111) surface. The size of Si and Ge clusters con$$cdot$$ned to a Si(111)-(7$$times$$7) half unit cell was determined to be 8.3$$pm$$1 atoms and 7.5$$pm$$1 atoms, respectively for a growth temperature of 400 K. This is the same value within the error and shows, that the material of the clusters is less important for the cluster size. On the Ge surface it was found that the reconstruction unit cell is important for the cluster size. On the (5$$times$$5) reconstructed Ge(111) surface the Si clusters have a smaller size of 4.7$$pm$$1 atoms compared to 8.2$$pm$$1 atoms for Si clusters on the Ge(111)-(7$$times$$7) surface.

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