Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Kato, Masashi*; Yoshihara, Kazuki*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
Japanese Journal of Applied Physics, 53(4S), p.04EP09_1 - 04EP09_5, 2014/04
Times Cited Count：6 Percentile：26.85(Physics, Applied)Miyake, Keiko*; Yasuda, Tomonari*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
Materials Science Forum, 778-780, p.503 - 506, 2014/02
Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
Japanese Journal of Applied Physics, 51(2), p.028006_1 - 028006_2, 2012/02
Times Cited Count：16 Percentile：55.56(Physics, Applied)Excess carrier lifetimes in as-grown and low-energy electron irradiated p-type 4H-SiC epitaxial layers were investigated using the microwave photoconductivity decay method. The carrier lifetime increased with increasing excitation density in the epilayers. This results suggests that the dominant recombination center in the epilayers has larger capture cross section for electrons than capture cross section for holes. The carrier lifetime in the epilayer decreased by the low-energy electron irradiation decreases. The decrease in lifetime in the electron irradiated samples showed recovery after annealing at 1000 
C.
Matsushita, Yoshinori*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
Materials Science Forum, 645-648, p.207 - 210, 2010/00
Silicon carbide (SiC) is a promising material for radiation hardness devices. In this study, we evaluated excess carrier decay curves in both as-grown and electron-irradiated p-type 4H-SiC layers by the microwave photoconductivity decay (
-PCD) method. The samples used in this study were an Al-doped p-type epitaxial layer grown on a Si-face B doped bulk p-type 4H-SiC. The samples were irradiated with electrons at an energy of 160 keV and at a doses of 1
10
cm
(ele-16) and 110
cm (ele-17). As a results of -PCD measurements, the lifetimes of free carriers for as-grown, ele-16 and ele-17 were estimated to be 0.14 s, 0.07 s and 0.04 s, respectively. This result indicates that defects acting as recombination centers were introduced by the electron irradiation.
Tamai, Hiroshi; Matsukawa, Makoto; Kurita, Genichi; Hayashi, Nobuhiko; Urata, Kazuhiro*; Miura, Yushi; Kizu, Kaname; Tsuchiya, Katsuhiko; Morioka, Atsuhiko; Kudo, Yusuke; et al.
Plasma Science and Technology, 6(1), p.2141 - 2150, 2004/02
Times Cited Count：2 Percentile：6.49(Physics, Fluids & Plasmas)The dominant issue for the the modification program of JT-60 (JT-60SC) is to demonstrate the steady state reactor relevant plasma operation. Physics design on plasma parameters, operation scenarios, and the plasma control method are investigated for the achievement of high-
. Engineering design and the R&D on the superconducting magnet coils, radiation shield, and vacuum vessel are performed. Recent progress in such physics and technology developments is presented.
Ishida, Shinichi; Abe, Katsunori*; Ando, Akira*; Chujo, T.*; Fujii, Tsuneyuki; Fujita, Takaaki; Goto, Seiichi*; Hanada, Kazuaki*; Hatayama, Akiyoshi*; Hino, Tomoaki*; et al.
Nuclear Fusion, 43(7), p.606 - 613, 2003/07
no abstracts in English
Ishida, Shinichi; Abe, Katsunori*; Ando, Akira*; Cho, T.*; Fujii, Tsuneyuki; Fujita, Takaaki; Goto, Seiichi*; Hanada, Kazuaki*; Hatayama, Akiyoshi*; Hino, Tomoaki*; et al.
Nuclear Fusion, 43(7), p.606 - 613, 2003/07
Times Cited Count：33 Percentile：69.14(Physics, Fluids & Plasmas)no abstracts in English
Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
no journal, ,
no abstracts in English
Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
no journal, ,
no abstracts in English
Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
no journal, ,
no abstracts in English
