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Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.
Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04
Times Cited Count:4 Percentile:33.51(Instruments & Instrumentation)Pastuovi, *; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*
Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04
Times Cited Count:7 Percentile:51.55(Instruments & Instrumentation)Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Hirao, Toshio*; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 60(4), p.2647 - 2650, 2013/08
Times Cited Count:17 Percentile:79.91(Engineering, Electrical & Electronic)Heavy ion induced anomalous charge collection was observed from 4H-SiC Schottky barrier diodes. It is suggested that the incident ion range with suspect to the thickness of the epi-layer of the SBD in key to understanding these observation and the understanding mechanism.
Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; Oshima, Takeshi
Journal of Applied Physics, 113(14), p.143714_1 - 143714_5, 2013/04
Times Cited Count:31 Percentile:77.95(Physics, Applied)Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.66 - 69, 2012/12
Silicon carbide (SiC) is regarded as a promising candidate for electronic devices requiring high radiation tolerance (rad-hard devices). Some results indicate that SiC has superior radiation tolerance from the point of view of total ionizing dose effects (TIDs). For the development of rad-hard SiC devices, it is necessary to understand the response of their performance when dense charge is generated in them by an incident ion, resulting in single event effects (SEEs). Therefore, we have measured the bias dependence of the collected charge distribution induced by heavy ions in 4H-SiC-schottky barrier diodes (SBDs) fabricated in thick epi-layer to reveal SEE mechanisms. As a result, anomalous collected charge peaks (2nd peaks) induced by the heavy ions were observed for the first time. The new process of the SEB was observed in the case of incident ions on thick epi-layer of SiC-SBDs.
Iwamoto, Naoya; Johnson, B. C.; Oshima, Takeshi; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.62 - 65, 2012/12
Iwamoto, Naoya; Johnson, B. C.; Oshima, Takeshi; Hoshino, Norihiro*; Tsuchida, Hidekazu*
no journal, ,
no abstracts in English
Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
Iwamoto, Naoya; Johnson, B. C.; Hoshino, Norihiro*; Ito, Masahiko*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; Oshima, Takeshi
no journal, ,
no abstracts in English
Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Kambayashi, Yuya; Onoda, Shinobu; Kada, Wataru*; Makino, Takahiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi; Kamiya, Tomihiro; Hanaizumi, Osamu*
no journal, ,
no abstracts in English
Kada, Wataru*; Onoda, Shinobu; Iwamoto, Naoya*; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Makino, Takahiro; Kambayashi, Yuya; Koka, Masashi; Hanaizumi, Osamu*; Kamiya, Tomihiro; et al.
no journal, ,
Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
no abstracts in English
Makino, Takahiro; Deki, Manato*; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Oshima, Takeshi
no journal, ,
no abstracts in English