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Journal Articles

Well-ordered arranging of Ag nanoparticles in SiO$$_{2}$$/Si by ion implantation

Takahiro, Katsumi*; Ninakuchi, Yuki*; Kawaguchi, Kazuhiro; Isshiki, Toshiyuki*; Nishio, Koji*; Sasase, Masato*; Yamamoto, Shunya; Nishiyama, Fumitaka*

Applied Surface Science, 258(19), p.7322 - 7326, 2012/07

https://doi.org/10.1016/j.apsusc.2012.04.001
 Times Cited Count：2 Percentile：10.02(Chemistry, Physical)

A nanometer-sized metallic particle embedded in a transparent dielectric exhibits a nonlinear susceptibility, and going to be applied to nonlinear optical devices. In the present study, well-ordered arrangements of Ag nanoparticles have been found for Ag-implanted SiO$$_{2}$$. Thermally grown SiO$$_{2}$$ on Si were implanted with 350 keV-Ag ions to fluences of 0.37-1.2 $$times$$ 10$$^{17}$$ ions/cm$$^{2}$$. Cross-sectional transmission electron microscopy and scanning transmission electron microscopy reveal the presence of a two-dimensional array of Ag nanoparticles of 25-40 nm in diameter located at a depth of $$sim$$130 nm, together with the self-organization of tiny Ag nanoparticles aligned along the SiO$$_{2}$$/Si interface. X-ray photoelectron spectroscopy and X-ray diffraction confirm the stability of these Ag nanoparticles embedded in the SiO$$_{2}$$/Si is found to be stable against oxidation and sulfidation when stored in ambient conditions for more than one and a half year.

Journal Articles

Application of X-ray photoelectron spectroscopy to characterization of Au nanoparticles formed by ion implantation into SiO$$_{2}$$

Takahiro, Katsumi*; Oizumi, Shinnosuke*; Morimoto, Keiichi*; Kawatsura, Kiyoshi*; Isshiki, Toshiyuki*; Nishio, Koji*; Nagata, Shinji*; Yamamoto, Shunya; Narumi, Kazumasa; Naramoto, Hiroshi*

Applied Surface Science, 256(4), p.1061 - 1064, 2009/11

https://doi.org/10.1016/j.apsusc.2009.05.104
 Times Cited Count：8 Percentile：36.66(Chemistry, Physical)

Oral presentation

Application of X-ray photoelectron spectroscopy to characterization of metallic nanoclusters formed by ion implantation, 3

Takahiro, Katsumi*; Oizumi, Shinnosuke*; Kawatsura, Kiyoshi*; Isshiki, Toshiyuki*; Nishio, Koji*; Nagata, Shinji*; Yamamoto, Shunya; Narumi, Kazumasa; Naramoto, Hiroshi

no journal, , 

no abstracts in English

Oral presentation

Well-ordered arrangement of Ag nanoparticles in SiO$$_{2}$$/Si by ion implantation

Takahiro, Katsumi*; Ninakuchi, Yuki*; Isshiki, Toshiyuki*; Nishio, Koji*; Nishiyama, Fumitaka*; Yamamoto, Shunya; Sasase, Masato*

no journal, , 

no abstracts in English

Oral presentation

Well-ordered arrangement of Ag nanoparticles in SiO$$_{2}$$/Si by ion implantation

Ninakuchi, Yuki*; Saito, Masahiro*; Isshiki, Toshiyuki*; Nishio, Koji*; Nishiyama, Fumitaka*; Yamamoto, Shunya; Sasase, Masato*; Takahiro, Katsumi*

no journal, , 

In the course of Ag implantation into thermally grown SiO$$_{2}$$ films, we found well-ordered Ag nanoparticles in the vicinity of SiO$$_{2}$$/Si interface. SiO$$_{2}$$ films of 300 nm thick were grown on single crystalline Si(111) substrates. The SiO$$_{2}$$/Si samples were implanted with 350 keV-Ag ions to a fluence of 1$$times$$10$$^{17}$$ ions/cm$$^{2}$$. The Ag-implanted SiO$$_{2}$$/Si samples were characterized by Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (XTEM). The Ag concentration depth profiles obtained by RBS and XPS were non-Gaussian, indicating that Ag atoms diffused significantly. XTEM revealed that well-arranged Ag nanoparticles of 30 nm and 2 nm in diameter were distributed near the projected range and the SiO$$_{2}$$/Si interface, respectively.

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