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Search Results: Records 1-20 displayed on this page of 37

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Journal Articles

Surface temperature dependence on AlN film formation processes induced by supersonic N$$_{2}$$ molecular beam

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Denki Gakkai Rombunshi, C, 134(4), p.524 - 525, 2014/04

https://doi.org/10.1541/ieejeiss.134.524

Journal Articles

Chemical reaction dynamics on ultra-thin oxide layer formation at Ni(001) surface

Teraoka, Yuden; Iwai, Yutaro*; Yoshigoe, Akitaka; Okada, Ryuta

Dai-57-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.44 - 45, 2013/11

no abstracts in English

Journal Articles

Control of oxidation $$cdot$$ nitridation reactions at metal surfaces by molecular beams and their observation via synchrotron radiation photoemission spectroscopy, 2

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Dai-56-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.360 - 361, 2012/10

no abstracts in English

Oral presentation

Thermal annealing effects below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Thermal stability of AlN layer formed by translational kinetic energy induced N$$_{2}$$ adsorption on Al(111) surface

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Analysis of nitrogen distribution in nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Takaoka, Tsuyoshi*; Jinno, Muneaki*; Teraoka, Yuden; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Film quality depending on film forming temperature and its thermal denaturation below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Analysis of Al(111) nitridation induced by supersonic N$$_{2}$$ molecular beam

Jinno, Muneaki*; Teraoka, Yuden; Harries, J.; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Okada, Ryuta; Iwai, Yutaro*; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

SR-XPS analysis of nitride thin films on Al(111) induced by translational kinetic energy of N$$_{2}$$ molecule

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Time evolution of Ge oxidation sites in Ge(100)-2$$times$$1 oxidation at 300 K

Yoshigoe, Akitaka; Teraoka, Yuden; Okada, Ryuta; Jinno, Muneaki*; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Study on oxidation mechanism of germanium surfaces is important because germanium has an advanced property for electron/hole mobility compared to silicon. We investigated oxide-structure during oxidation of Ge(100)-2$$times$$1 surface at room temperature. All experiments were performed using SUREAC2000 at SPring-8. We have confirmed no change of oxide structures from initial oxidation to saturation for back-filling oxidation and supersonic oxygen beams, respectively.

Oral presentation

Nitridation of Al(111) surface induced by N$$_{2}$$ translational energy; Surface temperature dependence

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Synchrotron radiation photoemission spectroscopy of Ni(001) surface oxidation induced by translational energy of supersonic O$$_{2}$$ molecular beam

Iwai, Yutaro*; Teraoka, Yuden; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

no abstracts in English

Oral presentation

Synchrotron XPS analysis of Cs in vermiculite and Cs compounds

Teraoka, Yuden; Yoshigoe, Akitaka; Okada, Ryuta; Iwai, Yutaro*

no journal, , 

Oral presentation

XPS analysis of Cs by synchrotron radiation

Teraoka, Yuden; Yoshigoe, Akitaka; Okada, Ryuta; Iwai, Yutaro*

no journal, , 

no abstracts in English

Oral presentation

Surface oxidation dynamics on Ni(001) and Ni(111) as observed by synchrotron photoemission spectroscopy

Teraoka, Yuden; Iwai, Yutaro*; Inoue, Keisuke*; Yoshigoe, Akitaka; Okada, Ryuta

no journal, , 

Oral presentation

Potential energy barriers on initial sticking of O$$_{2}$$ molecule at Ni(001) and (111) surfaces

Iwai, Yutaro*; Teraoka, Yuden; Inoue, Keisuke*; Yoshigoe, Akitaka; Okada, Ryuta

no journal, , 

no abstracts in English

Oral presentation

Translational energy dependence of initial sticking probability of O$$_{2}$$ on Ge(100)-2$$times$$1 surface at room temperature

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

There is considerable interest in germanium as a channel material for developing Si devices because of its high carrier mobility. Thus, Ge oxides and its growth mechanism are attracting widespread interest. In this conference, we report on the dependence of adsorption processes in room-temperature oxidation at a Ge(100)-2$$times$$1 surface on translational energy of O$$_{2}$$ clarified by the measurement of initial sticking probability. All experiments were performed using SUREAC2000 at BL23SU of SPring-8. It was found that adsorption mechanism changes around 0.1 eV. Furthermore, we found out two energy barriers for the adsorption of O$$_{2}$$ with translational energy of 2.2 eV.

Oral presentation

Evolution of oxidation states on Ge(100)-2$$times$$1 surface at 300 K

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has received much attention as a new channel material for metal-insulator-semiconductor field-effect-transistors due to its high carrier mobility. However, fundamental aspects of oxide growth mechanisms remain still unclear. In this conference, we report evolution of oxides for oxidation of a Ge(100)-2$$times$$1 surface using O$$_{2}$$ at 300 K. In-situ observation by synchrotron radiation photoelectron spectroscopy was conducted using SUREAC2000 at BL23SU in SPring-8. We found that Ge$$^{2+}$$/Ge$$^{1+}$$ ratio is almost 0.5 until saturation. This result indicates that dissociative chemisorption takes place at bridge and backbond sites of a Ge-Ge dimer and the number of this oxide increases with O$$_{2}$$ dose.

Oral presentation

Time-resolved observation of oxides on Ge(100)-2$$times$$1 surface at room temperature using synchrotron radiation XPS

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge is much attracting as a new material in future electronic devices and therfore oxidation of Ge crystal surfaces is now important. In this conference, we report that evolution of oxides on Ge(100)-2$$times$$1 surface up to saturated oxidation for thermal-O$$_{2}$$ and supersonic O$$_{2}$$ (2.2 eV) beams was studied by time-resolved observation using synchrotron radiation XPS. We found that Ge$$^{1+}$$/Ge$$^{2+}$$ is almost constant from early stages of oxidation to saturation.

Oral presentation

Incident energy dependence of initial sticking probability of O$$_{2}$$ at Ge(100)-2$$times$$1 surface at room temperature

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge and its oxidation are attracting widespread interest in the field of development of future electronic devices. In this conference, we report incident energy dependence of initial sticking probability for a Ge(100)-2$$times$$1 surface at room temperature. We obtained results which suggest two energy barriers for O$$_{2}$$ adsorption at around 0.1eV and 0.47 eV.

37 (Records 1-20 displayed on this page)