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Journal Articles

Surface temperature dependence on AlN film formation processes induced by supersonic N$$_{2}$$ molecular beam

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Denki Gakkai Rombunshi, C, 134(4), p.524 - 525, 2014/04

https://doi.org/10.1541/ieejeiss.134.524

Journal Articles

Al(111) nitridation below 473 K induced by supersonic N$$_{2}$$ molecular beam as observed by synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Jinno, Muneaki*; Harries, J.; Yoshigoe, Akitaka

Journal of Physics; Conference Series, 417, p.012031_1 - 012031_7, 2013/03

https://doi.org/10.1088/1742-6596/417/1/012031
 Times Cited Count：1 Percentile：38.58(Materials Science, Coatings & Films)

Journal Articles

Control of oxidation $$cdot$$ nitridation reactions at metal surfaces by molecular beams and their observation via synchrotron radiation photoemission spectroscopy, 2

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Dai-56-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.360 - 361, 2012/10

no abstracts in English

Journal Articles

Control of oxidation $$cdot$$ nitridation reactions at metal surfaces by molecular beams and their observation via synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Harries, J.; Yoshigoe, Akitaka

Dai-55-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.236 - 237, 2011/10

no abstracts in English

Oral presentation

Comparison of effective attenuation length (EAL) for SiO$$_{2}$$ determined using synchrotron radiation XPS with calculated inelastic mean free path (IMFP)

Inoue, Keisuke*; Teraoka, Yuden; Jinno, Muneaki

no journal, , 

The effective attenuation length (EAL) is a necessary parameter for estimating the thin film thickness using X-ray photoemission spectroscopy (XPS). The inelastic mean free path (IMFP) is often used instead of the EAL because EAL is scarcely known. In this experiment, EAL values of SiO$$_{2}$$ were measured in the photon energy region of 480 eV to 800 eV using synchrotron radiation photoemission spectroscopy. The estimated EALs are different from calculated IMFPs.

Oral presentation

Comparison of measured effective attenuation length in SiO$$_{2}$$ by SR-XPS with calculated inelastic mean free path

Inoue, Keisuke*; Jinno, Muneaki; Teraoka, Yuden

no journal, , 

In this work we compared calculated inelastic mean free path and measured effective attenuation length of photoelectron in SiO$$_{2}$$ by SR-XPS. Si(001) substrates with SiO$$_{2}$$ ultra-thin film were used as samples. In the synchrotron radiation energy from 400 eV to 1700 eV, Si 2P spectra was measured and energy dependence on effective attenuation length was investigated. Effective attenuation length does not depend on SiO$$_{2}$$ film thickness so that the film quality was constant. Effective attenuation length varied depending on dealing of suboxides (Si$$^{+}$$, Si$$^{2+}$$, Si$$^{3+}$$) in bulk(Si substrate), SiO$$_{2}$$ film or neglect. When suboxides are included in bulk, effective attenuation length is closest to TPP-2M calculation of inelastic mean free path.

Oral presentation

Measurement of apparent effective attenuation lengths in SiO$$_{2}$$ by SR-XPS and its debatable point

Jinno, Muneaki*; Inoue, Keisuke*; Teraoka, Yuden

no journal, , 

no abstracts in English

Oral presentation

Surface temperature dependence of incubation time in Al(111) nitridation induced by translational energy of N$$_{2}$$ molecules

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Incubation time depending on surface temperature in Al(111) nitridation induced by kinetic energy of N$$_{2}$$

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Apparent effective attenuation length of photoelectron in SiO$$_{2}$$ observed by synchrotron radiation photoemission spectroscopy

Jinno, Muneaki*; Inoue, Keisuke*; Teraoka, Yuden

no journal, , 

Oral presentation

Incubation time depending on surface temperature below 623 K in Al(111) nitridation induced by kinetic energy of N$$_{2}$$

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Incubation time depending on surface temperature in Al(111) nitridation induced by kinetic energy of N$$_{2}$$

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Enhancement of oxidation at Ge(100) and (111) surface at 300 K by supersonic O$$_{2}$$ molecular beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge is attracted considerable attention as a new material of MOSFET because of its high carrier mobility than that of Si. Understanding of O adsorption process on Ge substrate with various index planes is the most essential to control the quality of oxide layers for these devices. In this research, we employ SR-XPS measurement to study the oxidation mechanism of the Ge(100) and (111) which is known as one of the low index planes. We found the difference of Ge-3d photoemission profile for the Ge oxide formed by supersonic O$$_{2}$$ molecular beam and back-filling O$$_{2}$$. The difference shows that the kinetic energy of the supersonic O$$_{2}$$ molecular beam increased components of Ge oxide than that of back-filling O$$_{2}$$. This result suggests the presence of new O adsorption states activated by the supersonic O$$_{2}$$ molecular beam.

Oral presentation

Enhancement of surface oxidation on Ge(111)-c(2$$times$$8) caused by supersonic O$$_2$$ beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge is one of the promising materials for the next generation FET because of its high carrier mobility overwhelming that of Si. Understanding of oxidation processes on Ge substrates with various index planes is necessary to control the quality of oxide layers for these devices. In this research, we employed SR-XPS to analyze oxide layers on the Ge(111)-c(2$$times$$8) surface formed by thermal-O$$_2$$ gas and supersonic O$$_2$$ beam. Ge$$^3$$$$^+$$ component was generated only by high energy supersonic O$$_2$$ beam, although the oxide layer on Ge(100) has up to Ge$$^2$$$$^+$$. This result indicates that oxidation states are different depending on crystal planes. Our results give insight into mechanisms of oxidation processes on Ge.

Oral presentation

Analysis of oxide layer on Ge(100)-2$$times$$1 formed by supersonic O$$_2$$ beam

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has been attracted considerable attention as a new material of LSI because of its high carrier mobility. The O$$_2$$ translational kinetic energy will be essential to understand the formation of oxide layers on Ge substrate for these devices. We previously reported that the high kinetic energy of the supersonic O$$_2$$ beam enhances the oxidation on the Ge(100) at room temperature. In this research, we employed SR-XPS to analyze the oxidized Ge(100) surface formed by supersonic O$$_2$$ molecular beam and back-filling O$$_2$$. In our experiments, we found the increase in amounts of the Ge$$^2$$$$^+$$ oxide formed by supersonic O$$_2$$ molecular beam comparing to that formed by back-filling O$$_2$$, although their coordination numbers were same in both cases. This result suggests that new oxygen adsorption states on the Ge(100) surface are activated by the supersonic O$$_2$$ molecular beam. Our results give new knowledge concerning mechanisms of the formation of oxide layers on Ge substrate.

Oral presentation

Enhancement of oxidation at Ge(111)-c(2$$times$$8) surface at 300 K by supersonic O$$_2$$ molecular beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Thermal annealing effects below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Ge$$^3$$$$^+$$ components of oxidized Ge(111)-c(2$$times$$8) surface depending on translational kinetic energy of O$$_2$$

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Initial sticking probability on Ge(100)-2$$times$$1 depending on translational kinetic energy of O$$_2$$

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Translational energy induced oxidation of Ni(111) surface at room temperature by supersonic O$$_{2}$$ molecular beam

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

36 (Records 1-20 displayed on this page)