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Journal Articles

Effect of target compositions on the crystallinity of $$beta$$-FeSi$$_2$$ prepared by ion beam sputter deposition method

Yamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.17 - 21, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.052
 Times Cited Count：4 Percentile：25.12(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.13 - 16, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.051
 Times Cited Count：10 Percentile：46.84(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

The Role of sputter etching and annealing processes on the formation of $$beta$$-FeSi$$_{2}$$ thin films

Shimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.22 - 27, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.053
 Times Cited Count：8 Percentile：41.01(Materials Science, Multidisciplinary)

On the formation of $$beta$$-FeSi$$_{2}$$ using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented $$beta$$-FeSi$$_{2}$$ on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne$$^{+}$$ ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne$$^{+}$$ ion on IBSD method is the energy of 1keV with the fluence of 30$$times$$10$$^{19}$$ ions/m$$^{2}$$.

Journal Articles

Orientational ordering of iron silicide films on sputter etched Si substrate

Igarashi, Shinichi*; Katsumata, Toshinobu*; Haraguchi, Masaharu*; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Vacuum, 74(3-4), p.619 - 624, 2004/06

https://doi.org/10.1016/j.vacuum.2004.01.035
 Times Cited Count：6 Percentile：27.83(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Sputter etching of Si substrate to synthesize highly oriented $$beta$$-FeSi$$_{2}$$ films

Igarashi, Shinichi; Katsumata, Toshinobu; Haraguchi, Masaharu; Saito, Takeru; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Transactions of the Materials Research Society of Japan, 28(4), p.1153 - 1156, 2003/12

We have evaluated the crystal structure of the $$beta$$-FeSi$$_{2}$$ films formed with various sputter etching of Si substrate. Ne$$^{+}$$ sputter etching of Si (100) substrate was performed with ion energies of 1, 3, and 10 keV. After each etching, the substrate was annealed at a temperature of 1073 K for 30 min. The $$beta$$-FeSi$$_{2}$$ films of 100 nm in thickness were formed at 973 K with the amount of deposited Fe, 30 nm. X-ray diffraction revealed that these films have polycrystalline $$beta$$-FeSi$$_{2}$$ structure but strong preferential orientation aligned as $$beta$$-FeSi$$_{2}$$ (100) // Si (100). Furthermore, the oriented structure of the film was improved by lowering the incident energy of Ne$$^{+}$$.

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