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Lee, K. K.*; Laird, J. S.*; Oshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
Materials Science Forum, 645-648, p.1013 - 1016, 2010/04
no abstracts in English
Laird, J. S.*; Onoda, Shinobu; Hirao, Toshio; Edmonds, L.*; Oshima, Takeshi
IEEE Transactions on Nuclear Science, 54(6), p.2384 - 2393, 2007/12
Times Cited Count：8 Percentile：51.22(Engineering, Electrical & Electronic)no abstracts in English
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.*; Mishima, Kenta; Kawano, Katsuyasu*; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 53(6), p.3731 - 3737, 2006/12
Times Cited Count：16 Percentile：72.85(Engineering, Electrical & Electronic)no abstracts in English
Laird, J. S.*; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi; Johnston, A.*
IEEE Transactions on Nuclear Science, 53(6), p.3312 - 3320, 2006/12
Times Cited Count：14 Percentile：68.12(Engineering, Electrical & Electronic)no abstracts in English
and heavy ion damage on the impulse response and pulsed gain of a low breakdown voltage Si avalanche photodiodeLaird, J. S.*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi; Becker, H.*; Johnston, A.*
IEEE Transactions on Nuclear Science, 53(6), p.3786 - 3793, 2006/12
Times Cited Count：10 Percentile：56.98(Engineering, Electrical & Electronic)no abstracts in English
and heavy ion damage on the time-resolved gain of a low breakdown voltage Si avalanche photodiodeLaird, J. S.*; Onoda, Shinobu; Hirao, Toshio; Becker, H.*; Johnston, A.*; Ito, Hisayoshi
Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.37 - 40, 2006/10
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 52(5), p.1504 - 1512, 2005/10
Times Cited Count：7 Percentile：44.9(Engineering, Electrical & Electronic)no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
Journal of Applied Physics, 98(1), p.013530_1 - 013530_14, 2005/07
Times Cited Count：45 Percentile：80.59(Physics, Applied)no abstracts in English
p diodes using transient ion beam-induced currentOshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04
Times Cited Count：9 Percentile：55.97(Instruments & Instrumentation)In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro
Nuclear Instruments and Methods in Physics Research B, 231(1-4), p.497 - 501, 2005/04
Times Cited Count：3 Percentile：30.27(Instruments & Instrumentation)no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Oyama, Hidenori*; Kamiya, Tomihiro
JAERI-Review 2004-025, TIARA Annual Report 2003, p.14 - 16, 2004/11
no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10
no abstracts in English
n diodes due to heavy ion irradiationHirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Kamiya, Tomihiro; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.125 - 129, 2004/10
no abstracts in English
Onoda, Shinobu; Hirao, Toshio; Laird, J. S.; Wakasa, Takeshi; Yamakawa, Takeshi; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Kamiya, Tomihiro; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.173 - 176, 2004/10
no abstracts in English
Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Wakasa, Takeshi; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.187 - 189, 2004/10
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Kamiya, Tomihiro
Nuclear Instruments and Methods in Physics Research B, 219-220, p.1015 - 1021, 2004/06
Times Cited Count：7 Percentile：45.11(Instruments & Instrumentation)no abstracts in English
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photodiodes studied by pulsed laser measurementsLaird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
IEEE Transactions on Nuclear Science, 50(6, Part1), p.2003 - 2010, 2003/12
Times Cited Count：10 Percentile：56.43(Engineering, Electrical & Electronic)no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro
Proceedings of 3rd IEEE/LEOS International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (NUSOD '03), 2 Pages, 2003/10
no abstracts in English
Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu*; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 210, p.201 - 205, 2003/09
Times Cited Count：4 Percentile：33.69(Instruments & Instrumentation)Electrodes on SiC pn diode were studied uising Transient Ion Beam Induced Current system (TIBIC). pn junction of SiC diode was formed by phosphorus ion implantation at 800 
C and subsequent annealing at 1800 C for 1 min in Ar. Electrodes of diode were fabricated (1) Al evaporation and sintering at 850 C or (2) one more Al evaporation after the process mentioned above. TIBIC measurement using 15 MeV-O and 12 MeV-Ni ion micro beam. As the result, non-uniformity for transient current from the electrodes of diode (1)was observed. As for diode (2), such non-uniformity was not observed. On the other hand, the value of collected charges was the same for both diodes. This indicates that the quality of pn junction is the almost same for both diodes. For current-voltage characteristics, both diodes showed a order of pA at reverse bias of 30 V and turn-on at forward bias of 2V which are ideal for SiC diode. Thus, we can conclude that we obtain the information on electrical characteristics of electrodes which is not obtained from normal current-voltage measurement.
