Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Kumagai, Tomohisa*; Miura, Yasufumi*; Miura, Naoki*; Marie, S.*; Almahdi, R.*; Mano, Akihiro; Li, Y.; Katsuyama, Jinya; Wada, Yoshitaka*; Hwang, J.-H.*; et al.
Journal of Pressure Vessel Technology, 144(1), p.011509_1 - 011509_18, 2022/02
Times Cited Count：1 Percentile：20.34(Engineering, Mechanical)To predict fracture behavior for ductile materials, some ductile fracture simulation methods different from classical approaches have been investigated based on appropriate models of ductile fracture. For the future use of the methods to overcome restrictions of classical approaches, the applicability to the actual components is of concern. In this study, two benchmark problems on the fracture tests supposing actual components were provided to investigate prediction ability of simulation methods containing parameter decisions. One was the circumferentially through-wall and surface cracked pipes subjected to monotonic bending, and the other was the circumferentially through-wall cracked pipes subjected to cyclic bending. Participants predicted the ductile crack propagation behavior by their own approaches, including FEM employed GTN yielding function with void ratio criterion, are FEM employed GTN yielding function, FEM with fracture strain or energy criterion modified by stress triaxiality, XFEM with J or delta J criterion, FEM with stress triaxiality and plastic strain based ductile crack propagation using FEM, and elastic-plastic peridynamics. Both the deformation and the crack propagation behaviors for monotonic bending were well reproduced, while few participants reproduced those for cyclic bending. To reproduce pipe deformation and fracture behaviors, most of groups needed parameters which were determined toreproduce pipe deformation and fracture behaviors in benchmark problems themselves and it is still difficult to reproduce them by using parameters only from basic materials tests.
Xu, M.*; Yamamoto, Kei; Puebla, J.*; Baumgaertl, K.*; Rana, B.*; Miura, Katsuya*; Takahashi, Hiromasa*; Grundler, D.*; Maekawa, Sadamichi*; Otani, Yoshichika*
Science Advances (Internet), 6(32), p.eabb1724_1 - eabb1724_4, 2020/08
Times Cited Count：81 Percentile：97.1(Multidisciplinary Sciences)
and EuAlNakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Miura, Yasunao*; Tsutsumi, Hiroki*; Mori, Akinobu*; Ishida, Kazuhiro*; Mitamura, Katsuya*; Hirose, Yusuke*; et al.
JPS Conference Proceedings (Internet), 3, p.011012_1 - 011012_6, 2014/06
Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Tatetsu, Yasutomi*; Maehira, Takahiro*; Miura, Yasunao*; Mori, Akinobu*; Tsutsumi, Hiroki*; Hirose, Yusuke*; et al.
Journal of the Physical Society of Japan, 82(12), p.124708_1 - 124708_6, 2013/12
Times Cited Count：21 Percentile：72.6(Physics, Multidisciplinary)Nakamura, Ai*; Hiranaka, Yuichi*; Hedo, Masato*; Nakama, Takao*; Miura, Yasunao*; Tsutsumi, Hiroki*; Mori, Akinobu*; Ishida, Kazuhiro*; Mitamura, Katsuya*; Hirose, Yusuke*; et al.
Journal of the Physical Society of Japan, 82(10), p.104703_1 - 104703_10, 2013/10
Times Cited Count：35 Percentile：81.11(Physics, Multidisciplinary)Miura, Katsuya*; Sugano, Ryoko*; Ichimura, Masahiko*; Hayakawa, Jun*; Ikeda, Shoji*; Ohno, Hideo*; Maekawa, Sadamichi
Physical Review B, 84(17), p.174434_1 - 174434_7, 2011/11
Times Cited Count：1 Percentile：5.4(Materials Science, Multidisciplinary)Taguchi, Katsuya; Nagaoka, Shinichi; Yamanaka, Atsushi; Sato, Takehiko; Nakamura, Yoshinobu; Omori, Eiichi; Miura, Nobuyuki
no journal, ,
no abstracts in English
substrate co-implanted with Si and C ionsKikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.
no journal, ,
Light emission around a wavelength (
) of 500 nm from SiO substrates implanted with Si and C ions and annealed at 1100
C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO substrates implanted with Si and C ions and annealed at the lower temperature of 700C. PL peaks by Si-ion implantation were observed around = 650 nm, and PL peaks by C-ion implantation were observed around = 450 nm from SiO substrates annealed at 700C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.
Ozawa, Yusuke*; Kubota, Hitoshi*; Miura, Kenta*; Hanaizumi, Osamu*; Noguchi, Katsuya*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; Takano, Katsuyoshi*; Okubo, Takeru; et al.
no journal, ,
substrates implanted with Si and C ionsInada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito
no journal, ,
It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 
5.0
10
ions/cm
. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.
Kano, Keisuke*; Saruya, Ryota*; Kawabata, Shunsuke*; Araki, Jun*; Noguchi, Katsuya*; Kada, Wataru*; Miura, Kenta*; Kato, Hijiri*; Sato, Takahiro; Koka, Masashi; et al.
no journal, ,
