Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

https://doi.org/10.7567/JJAP.55.01AD01

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Azimuthal correlations of electrons from heavy-flavor decay with hadrons in and Au+Au collisions at = 200 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Yasuyuki*; Al-Bataineh, H.*; Alexander, J.*; Aoki, Kazuya*; Aphecetche, L.*; Aramaki, Y.*; et al.

Physical Review C, 83(4), p.044912_1 - 044912_16, 2011/04

https://doi.org/10.1103/PhysRevC.83.044912

Measurements of electrons from the decay of open-heavy-flavor mesons have shown that the yields are suppressed in Au+Au collisions compared to expectations from binary-scaled collisions. Here we extend these studies to two particle correlations where one particle is an electron from the decay of a heavy flavor meson and the other is a charged hadron from either the decay of the heavy meson or from jet fragmentation. These measurements provide more detailed information about the interaction between heavy quarks and the quark-gluon matter. We find the away-side-jet shape and yield to be modified in Au+Au collisions compared to collisions.

Nuclear data evaluations for JENDL high-energy file

Watanabe, Yukinobu*; Fukahori, Tokio; Kosako, Kazuaki*; Shigyo, Nobuhiro*; Murata, Toru*; Yamano, Naoki*; Hino, Tetsushi*; Maki, Koichi*; Nakashima, Hiroshi; Odano, Naoteru*; et al.

AIP Conference Proceedings 769, p.326 - 331, 2005/05

https://doi.org/10.1063/1.1945015

An overview is presented of recent nuclear data evaluations performed for the JENDL high-energy (JENDL-HE) file, in which neutron and proton cross sections for energies up to 3 GeV are included for the whole 132 nuclides. The current version of the JENDL-HE file consists of neutron total cross sections, nucleon elastic scattering cross sections and angular distributions, nonelastic cross sections, production cross sections and double-differential cross sections of secondary light particles ( He, , and ) and -rays, isotope production cross sections, and fission cross sections in the ENDF6 format. The present evaluations are performed on the basis of experimental data and theoretical model calculations. For the cross section calculations, we have constructed a hybrid calculation code system with some available nuclear model codes and systematics-based codes, such as ECIS96, OPTMAN, GNASH, JQMD, JAM, TOTELA, FISCAL, and so on. The evaluated cross sections are compared with available experimental data and the other evaluations. Future plans of our JENDL-HE project are discussed along with prospective needs of high-energy cross section data.

Application of neutron radiography to visualization of cryogenic fluid boiling two-phase flows

Takenaka, Nobuyuki*; Asano, Hitoshi*; Fujii, Terushige*; Ushiro, Toshihiko*; Iwatani, Junji*; Murata, Yutaka*; Mochiki, Koichi*; Taguchi, Akira*; Matsubayashi, Masahito; Tsuruno, Akira

Nuclear Instruments and Methods in Physics Research A, 377(1), p.174 - 176, 1996/07

https://doi.org/10.1016/0168-9002(96)00138-6

no abstracts in English

2007 version of JENDL high energy file and JENDL photonuclear data file

Fukahori, Tokio; Kunieda, Satoshi; Chiba, Satoshi; Harada, Hideo; Nakashima, Hiroshi; Mori, Takamasa; Shimakawa, Satoshi; Maekawa, Fujio; Watanabe, Yukinobu*; Shigyo, Nobuhiro*; et al.

no journal, , 

The latest version of JENDL High Energy File (JENDL/HE) and JENDL Photonuclear Data File (JENDL/PD) is being planed to be released as JENDL/HE-2007 and JENDL/PD-2007. In JENDL/HE-2007, nuclear data for about 100 nuclides, which are newly ecaluated and revised from JENDL/HE-2004 will be stored. The JENDL/PD-2007 will have nuclear data for about 170 nuclides.

The Electrical characteristics of SiC-MOSFETs irradiated with -rays at elevated temperature

Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Electrical properties of SiC MOSFETs irradiated with -rays at elevated temperature

Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with -rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.

Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to -ray irradiation

Takeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Effect of -ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.

Influence of gate bias on -ray radiation response of SiC MOSFETs

Takeyama, Akinori; Murata, Koichi*; Mitomo, Satoshi*; Matsuda, Takuma*; Yokoseki, Takashi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

Deterioration of electrical property of SiCMOSFETs due to irradiation was reduced compared with no biased ones, when the SiC MOSFETs with switching bias were irradiated. In order to clarify this mechanism, SiCMOSFETs were irradiated up to 50 kGy with switching bias applied to gate oxide from 4.5 to 0 V. As a result, the large negative shift of threshold voltage V due to irradiation with positive bias significantly recovered in the cases that the bias switched to zero. It shows electrical property of SiCMOSFETs were immediately relieved when applied bias was removed by switching.