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Muroga, Masataka*; Suzuki, Hirokazu*; Udono, Haruhiko*; Kikuma, Isao*; Zhuravlev, A. V.; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Terai, Takayuki*
Thin Solid Films, 515(22), p.8197 - 8200, 2007/08
Times Cited Count:6 Percentile:31.25(Materials Science, Multidisciplinary)Semiconducting -FeSi has received much attention as a material for Si-based optoelectronic devices. There are a number of studies on heteroepitaxy of -FeSi film on Si. However, growth experiments of -FeSi film on single crystalline -FeSi substrate have not been investigated yet. Recently, single crystalline -FeSi with large growth facets by solution growth method using Ga solvent. By obtaining a smooth surface on the substrate, we have succeeded in growing -FeSi film on -FeSi(110) substrate using molecular-beam epitaxy.
Ouchi, Shinji*; Muroga, Masataka*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
Thermal preannealing of single crystalline -FeSi substrate for MBE has been investigated to obtain better substrate for homo-epitaxial growth of -FeSi film.
Wakaya, Ippei*; Muroga, Masataka*; Ouchi, Shinji*; Udono, Haruhiko*; Yamada, Yoichi; Yamamoto, Hiroyuki; Kikuma, Isao*
no journal, ,
RHEED observation of surface has been performed on -FeSi single crystals.