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Yokoyama, Sumi*; Tsujimura, Norio; Hashimoto, Makoto; Yoshitomi, Hiroshi; Kato, Masahiro*; Kurosawa, Tadahiro*; Tatsuzaki, Hideo*; Sekiguchi, Hiroshi*; Koguchi, Yasuhiro*; Ono, Koji*; et al.
Journal of Radiation Protection and Research, 47(1), p.1 - 7, 2022/03
Background: In Japan, new regulations that revise the dose limit for the lens of the eye (the lens), operational quantities, and measurement positions for the lens dose were enforced in April 2021. Based on the international safety standards, national guidelines, the results of the Radiation Safety Research Promotion Fund of the Nuclear Regulatory Authority, and other studies, the Working Group of Radiation Protection Standardization Committee, the Japan Health Physics Society (JHPS) developed a guideline for radiation dose monitoring for the lens. Materials and Methods: The Working Group of the JHPS discussed the criteria of non-uniform exposure and the management criteria set to not exceed the dose limit for the lens. Results and Discussion: In July 2020, the JHPS guideline was published. The guideline consists of three parts: main text, explanations, and 26 questions. In the questions, the corresponding answers were prepared, and specific examples were provided to enable similar cases to be addressed. Conclusion: With the development of guideline on radiation dose monitoring of the lens, radiation managers and workers will be able to smoothly comply with revised regulations and optimise radiation protection.
Yokoyama, Sumi*; Iwai, Satoshi*; Tsujimura, Norio; Hashimoto, Makoto; Yoshitomi, Hiroshi; Kato, Masahiro*; Kurosawa, Tadahiro*; Tatsuzaki, Hideo*; Sekiguchi, Hiroshi*; Koguchi, Yasuhiro*; et al.
Proceedings of 15th International Congress of the International Radiation Protection Association (IRPA-15) (Internet), 8 Pages, 2022/00
filmsOkada, Hiroshi*; Natsume, Satoshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Kamiya, Tomihiro
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.147 - 150, 2004/10
no abstracts in English
thin filmsYoshida, Akira*; Natsume, Satoshi*; Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Oshima, Takeshi; Ito, Hisayoshi
no journal, ,
CuInSe (CIS)-based thin film solar cells have excellent radiation hardness and are promising in applications in space. However, although CIS thin film is used as an absorption layer in the cell, the details of radiation-induced degradation mechanism are not yet clear. In this report, n-type CIS thin film was fabricated by RF sputtering and was annealed at 823 K together with CuSe
film evaporated on the CIS thin film, resulting in p-type CIS thin layer. The electrical properties of p-type CIS thin films were investigated. These films were irradiated with high energy electrons, up to the irradiation fluence 2
10
[1/cm
] of electrons accelerated up to 2 MeV. Over 110[1/cm], the resistivity began to increase drastically. The temperature dependence of the resistivity was measured below room temperature down to 20 K. These behaviors are explained by the grain-boundary-dominated transport with the increased barrier energy at the grain boundary.
