Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Sakakibara, Ryotaro*; Bao, J.*; Yuhara, Keisuke*; Matsuda, Keita*; Terasawa, Tomoo; Kusunoki, Michiko*; Norimatsu, Wataru*
Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07
Times Cited Count：1 Percentile：54.89(Physics, Applied)We here report a step unbunching phenomenon, which is the inverse of the phenomenon of step bunching. When a 4H-SiC (0001) surface is annealed at a high temperature, step bunching arises due to the different velocities of the step motion in adjacent steps, resulting in steps with a height of more than several nanometers. We found that the bunched steps, thus, obtained by hydrogen etching in an Ar/H
atmosphere were "unbunched" into lower height steps when annealed subsequently at lower temperatures. This unbunching phenomenon can be well explained by the consequence of the competition between energetics and kinetics. Our findings provide another approach for the surface smoothing of SiC by hydrogen etching and may give significant insight into the application of SiC power devices and two-dimensional materials growth techniques in general.
Sumi, Tatsuya*; Nagai, Kazuki*; Bao, J.*; Terasawa, Tomoo; Norimatsu, Wataru*; Kusunoki, Michiko*; Wakabayashi, Yusuke*
Applied Physics Letters, 117(14), p.143102_1 - 143102_5, 2020/10
Times Cited Count：4 Percentile：26.53(Physics, Applied)A systematic structural study of epitaxial graphene samples on the SiC (0001) surface has been performed by the surface X-ray diffraction method, which is a non-contact technique. For samples with only a buffer layer, one layer graphene, and multilayer graphene, the distances between the buffer layer and the surface Si atoms were found to be 0.23 nm. This value is the same as reported values. For quasi-free-standing graphene samples prepared by the rapid cooling method, there was no buffer layer and the distance between the quasi-free-standing graphene and the surface Si atoms was 0.35 nm, which is significantly shorter than the value in hydrogen-intercalated graphene and slightly longer than the interplane distance in graphite. The Si occupancy deviated from unity within 1 nm of the SiC surface. The depth profile of the Si occupancy showed little sample dependence, and it was reproduced by a simple atomistic model based on random hopping of Si atoms.
C thin filmNorimatsu, Wataru*; Matsuda, Keita*; Terasawa, Tomoo; Takata, Nao*; Masumori, Atsushi*; Ito, Keita*; Oda, Koji*; Ito, Takahiro*; Endo, Akira*; Funahashi, Ryoji*; et al.
Nanotechnology, 31(14), p.145711_1 - 145711_7, 2020/04
Times Cited Count：6 Percentile：38.95(Nanoscience & Nanotechnology)We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of BC on SiC and graphene on BC had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on BC acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on BC was highly boron doped, and the hole concentration could be controlled over a wide range of 2
10
to 210
cm
. Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.
-polarization Raman microscopySaito, Yuika*; Tokiwa, Kenshiro*; Kondo, Takahiro*; Bao, J.*; Terasawa, Tomoo; Norimatsu, Wataru*; Kusunoki, Michiko*
AIP Advances (Internet), 9(6), p.065314_1 - 065314_6, 2019/06
Times Cited Count：4 Percentile：16.07(Nanoscience & Nanotechnology)Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito
no journal, ,
We report the band structure of graphene grown on hex-Au(001) using angle resolved photoemission spectroscopy (ARPES). We prepared graphene on hex-Au(001) by chemical vapor deposition and took ARPES image of the sample at AichiSR BL7U. The linear graphene band shows the intensity reduction at the binding energy of approximately 0.9 eV, indicating the modification of band structure of graphene by quasi-one dimensional potential of the hex-Au(001) reconstructed surface.
Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito
no journal, ,
Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito
no journal, ,
Graphene shows absorptivity and emissivity of 2.3% independent from the wavelength, however, the wavelength selectivity of the optical properties is required for device applications. Here we report the observation of the electronic band structure and thermal radiation of graphene grown on hex-Au(001) structure. The thermal radiation of graphene grown on hex-Au(001) was decreased in the optical microscopy which observed the light with the wavelength of 700-900 nm. The same sample showed the modified band structure observed by angle resolved photoemission spectroscopy. We will discuss the relation between the thermal radiation and band structure of graphene on Au substrates.
Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Yano, Masahiro; Saiki, Koichiro*; Asaoka, Hidehito
no journal, ,
Terasawa, Tomoo; Yasuda, Satoshi; Hayashi, Naoki*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito
no journal, ,
no abstracts in English
Terasawa, Tomoo; Yasuda, Satoshi; Matsunaga, Kazuya*; Hayashi, Naoki*; Tanaka, Shinichiro*; Norimatsu, Wataru*; Ito, Takahiro*; Machida, Shinichi*; Asaoka, Hidehito
no journal, ,
Graphene grown on Hex-Au(001) substrate shows an energy gap in its 
-band. Previous reports speculated that the periodic potential of Hex-Au(001) resulted in the energy gap formation in the -band of graphene. In the present study, we found by angle-resolved photoemission spectroscopy that the hybridyzation of sp-band of Hex-Au(001) and -band of graphene created the energy gap in the -band of graphene.
