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Matsumura, Seidai*; Ochiai, Kunihito*; Udono, Haruhiko*; Esaka, Fumitaka; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
Physics Procedia, 11, p.174 - 176, 2011/02
Times Cited Count:3 Percentile:82.2(Optics)The surface structures on the surface of -FeSi substrate after heat treatment in ultra high vacuum and their influence on homoepitaxial growth were investigated. It was found that the dip structures appeared on the surface of -FeSi (100) substrate after heat treatment above 1023 K, where the evaporation of surface oxide layer (SiO) occurred. The composition of the dip structure was Fe-rich as compared to nominal -FeSi composition (Si/Fe=2). This result indicates that the decomposition from -FeSi to -FeSi would occur on the surface. The surface morphology observed after heat treatment depended on the orientation of the substrate. In addition, homoepitaxial films with smooth surface on -FeSi (111) substrate at the growth temperature of 973 and 1073 K were obtained.
Wakaya, Ippei*; Ochiai, Kunihito*; Udono, Haruhiko*; Nagano, Takatoshi*; Yamada, Yoichi; Yamamoto, Hiroyuki; Esaka, Fumitaka
no journal, ,
Deposit condition in the first stage of -FeSi homoepitaxial growth has been investigated.
Ochiai, Kunihito*; Mao, W.; Sekino, Kazuyuki*; Udono, Haruhiko*; Esaka, Fumitaka; Yamaguchi, Kenji
no journal, ,
no abstracts in English
Matsumura, Seidai*; Ochiai, Kunihito*; Udono, Haruhiko*; Esaka, Fumitaka; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi
no journal, ,
no abstracts in English
Birumachi, Atsushi; Katagiri, Masaki*; Ebine, Masumi; Nakamura, Tatsuya; Arai, Yoichi*; Ochiai, Kunihito*
no journal, ,
no abstracts in English