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Shimoda, Ami*; Iwasa, Kazuaki*; Kuwahara, Keitaro*; Sagayama, Hajime*; Nakao, Hironori*; Ishikado, Motoyuki*; Ohara, Takashi; Nakao, Akiko*; Hoshikawa, Akinori*; Ishigaki, Toru*
JPS Conference Proceedings (Internet), 38, p.011091_1 - 011091_6, 2023/05
Fujiwara, Hidenori*; Umetsu, Rie*; Kuroda, Fumiaki*; Miyawaki, Jun*; Kashiuchi, Toshiyuki*; Nishimoto, Kohei*; Nagai, Kodai*; Sekiyama, Akira*; Irizawa, Akinori*; Takeda, Yukiharu; et al.
Scientific Reports (Internet), 11(1), p.18654_1 - 18654_9, 2021/09
Times Cited Count:0 Percentile:0(Multidisciplinary Sciences)Nakajima, Kenji; Kawakita, Yukinobu; Ito, Shinichi*; Abe, Jun*; Aizawa, Kazuya; Aoki, Hiroyuki; Endo, Hitoshi*; Fujita, Masaki*; Funakoshi, Kenichi*; Gong, W.*; et al.
Quantum Beam Science (Internet), 1(3), p.9_1 - 9_59, 2017/12
The neutron instruments suite, installed at the spallation neutron source of the Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex (J-PARC), is reviewed. MLF has 23 neutron beam ports and 21 instruments are in operation for user programs or are under commissioning. A unique and challenging instrumental suite in MLF has been realized via combination of a high-performance neutron source, optimized for neutron scattering, and unique instruments using cutting-edge technologies. All instruments are/will serve in world-leading investigations in a broad range of fields, from fundamental physics to industrial applications. In this review, overviews, characteristic features, and typical applications of the individual instruments are mentioned.
Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Omichi, Masaaki*; Asano, Atsushi*; Tsukuda, Satoshi*; Takano, Katsuyoshi*; Sugimoto, Masaki; Saeki, Akinori*; Sakamaki, Daisuke*; Onoda, Akira*; Hayashi, Takashi*; Seki, Shu*
Nature Communications (Internet), 5, p.3718_1 - 3718_8, 2014/04
Times Cited Count:33 Percentile:78.27(Multidisciplinary Sciences)Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules. Degradation of the human serum albumin nanowires was examined using trypsin. The biotinylated human serum albumin nanowires bound avidin, demonstrating the high affinity of the nanowires. Human serum albumin-avidin hybrid nanowires were also fabricated from a solid state mixture and exhibited good mechanical strength. The biotinylated human serum albumin nanowires can be transformed into nanowires exhibiting a biological function such as avidin-biotinyl interactions and peroxidase activity. The present technique is a versatile platform for functionalizing the surface of any protein molecule with an extremely large surface area.
Hirata, Yosuke*; Nakahara, Katsuhiko*; Sano, Akira*; Sato, Mitsuyoshi*; Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
Journal of Power and Energy Systems (Internet), 2(2), p.561 - 572, 2008/00
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Sano, Akira*; Naito, Susumu*; Sumida, Akio*; Izumi, Mikio*; Maekawa, Tatsuyuki*; Sato, Mitsuyoshi*; Nambu, Kenichi*; et al.
Proceedings of 15th International Conference on Nuclear Engineering (ICONE-15) (CD-ROM), 6 Pages, 2007/04
no abstracts in English
Hirata, Yosuke*; Nakahara, Katsuhiko*; Sano, Akira*; Sato, Mitsuyoshi*; Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
Proceedings of 15th International Conference on Nuclear Engineering (ICONE-15) (CD-ROM), 6 Pages, 2007/04
no abstracts in English
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Izumi, Mikio*; Naito, Susumu*; Yamamoto, Shuji*; Sano, Akira*; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
no journal, ,
no abstracts in English
Miyamoto, Yasuaki; Yamaguchi, Hiromi; Naito, Susumu*; Sano, Akira*; Hirata, Yosuke*; Noda, Etsuo*; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
no journal, ,
no abstracts in English
Miyamoto, Yasuaki; Yamaguchi, Hiromi; Hirata, Yosuke*; Sano, Akira*; Sato, Mitsuyoshi*; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
no journal, ,
no abstracts in English
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Sano, Akira*; Naito, Susumu*; Sumida, Akio*; Sato, Mitsuyoshi*; Nambu, Kenichi*; Takahashi, Hiroyuki*; Oda, Akinori*
no journal, ,
no abstracts in English
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Naito, Susumu*; Sano, Akira*; Hirata, Yosuke*; Noda, Etsuo*; Sato, Mitsuyoshi*; Nambu, Kenichi*; Takahashi, Hiroyuki*; et al.
no journal, ,
no abstracts in English
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Hirata, Yosuke*; Naito, Susumu*; Sano, Akira*; Nakahara, Katsuhiko*; Sato, Mitsuyoshi*; Nambu, Kenichi*; Takahashi, Hiroyuki*; et al.
no journal, ,
no abstracts in English
Aoyama, Yoshio; Miyamoto, Yasuaki; Yamaguchi, Hiromi; Naito, Susumu*; Sano, Akira*; Izumi, Mikio*; Sumida, Akio*; Maekawa, Tatsuyuki*; Sato, Mitsuyoshi*; Nambu, Kenichi*; et al.
no journal, ,
Radioactive waste contaminated by Uranium has been accumulated in front-end facilities of the nuclear fuel cycle. The purpose of the present project is to develop the practical and highly efficient measurement system, which solves the above-mentioned requirements based on the innovative concept of indirect alpha radioactivity measurement using ionized air stream transportation. The ionized air by alpha particles near the waste is peeled and transported into the ion sensor by controlling air stream in the measurement system. In order to give the actual solution for this indirect measurement concept, we have to clarify various basic physics concerning with radiation ionizing process in the air, ion reaction process in the air, ion transportation process by the turbulent air flow, and measurement process in the ion sensor. For this purpose, we have to develop various analytical simulation technologies for predicting ion behavior as well as direct measurement technologies of ion spatial distribution. The final target of the project is to establish the practical and verified clearance confirmation technology based on the above-mentioned physical and technological knowledge.
Yamaguchi, Toshikazu*; Oda, Yasuhisa; Shimada, Yutaka*; Oda, Akinori*; Sawahara, Hironori*; Shimamura, Kohei*; Kajiwara, Ken; Takahashi, Koji; Sakamoto, Keishi; Komurasaki, Kimiya*
no journal, ,
no abstracts in English
Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with -rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.
Oshima, Takeshi; Lohrmann, A.*; Johnson, B. C.*; Castelletto, S.*; Onoda, Shinobu; Makino, Takahiro; Takeyama, Akinori; Klein, J. R.*; Bosi, M.*; Negri, M.*; et al.
no journal, ,
no abstracts in English
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
no abstracts in English