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Journal Articles

Diffusion phenomenon at the interface of Cu-brass under a strong gravitational field

Ogata, Yudai*; Iguchi, Yusuke*; Tokuda, Makoto*; Januszko, K.*; Khandaker, J. I.*; Ono, Masao; Mashimo, Tsutomu*

Journal of Applied Physics, 117(12), p.125902_1 - 125902_6, 2015/03

https://doi.org/10.1063/1.4916376
 Times Cited Count：9 Percentile：34.44(Physics, Applied)

Journal Articles

Observation of itinerant Ce 4$$f$$ electronic states in CeIrSi$$_3$$ studied by angle-resolved Ce 3$$drightarrow 4f$$ resonance photoemission spectroscopy

Okochi, Takuo*; Toshimitsu, Takafumi*; Yamagami, Hiroshi; Fujimori, Shinichi; Yasui, Akira; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi; Miyauchi, Yuichiro*; et al.

Journal of the Physical Society of Japan, 78(8), p.084802_1 - 084802_6, 2009/08

https://doi.org/10.1143/JPSJ.78.084802
 Times Cited Count：10 Percentile：54.5(Physics, Multidisciplinary)

We have applied angle-resolved Ce 3$$d{rightarrow}$$4$$f$$ resonance photoemission spectroscopy to the non-centrosymmetric pressure-induced superconductor CeIrSi$$_3$$ and obtained the 4$$f$$ band-structure and Fermi surfaces. We have found that the Ce 4$$f$$ states are located mainly near the Fermi level and that the photoemission intensity derived from the dispersive conduction bands across the Fermi level shows considerable resonant enhancement. In addition, the band structure and Fermi surfaces of CeIrSi$$_3$$ are different from those of the non-$$f$$ reference compound, LaIrSi$$_3$$ and the difference is well explained by the band structure calculated within the local density approximation (LDA). These results strongly suggest that the Ce 4$$f$$ electrons in CeIrSi$$_3$$ are well hybridized with conduction bands and form itinerant electronic states.

Journal Articles

Superconductivity in CeIrSi$$_3$$ realized at the quantum critical point

Settai, Rikio*; Kawai, Tomoya*; Miyauchi, Yuichiro*; Okuda, Yusuke*; Onuki, Yoshichika; Takeuchi, Tetsuya*; Tateiwa, Naoyuki; Matsuda, Tatsuma; Haga, Yoshinori; Harima, Hisatomo*

Kotai Butsuri, 43(8), p.459 - 474, 2008/08

http://ci.nii.ac.jp/naid/40016234247

The magnetic transition temperature of an antiferromagnet CeIrSi$$_3$$ decreases with increasing hydrostatic pressure, and finally superconductivity appears. An exotic superconducting symmetry is expected because of the absence of the inversion center in the crystal structure. One of the prominent features is the anomalously large upper critical field observed around the quantum critical point.

Journal Articles

Large heat capacity jump at the superconducting transition temperature in the non-centrosymmetric superconductor CeIrSi$$_3$$ under high pressure

Tateiwa, Naoyuki; Haga, Yoshinori; Matsuda, Tatsuma; Ikeda, Shugo; Yamamoto, Etsuji; Okuda, Yusuke*; Miyauchi, Yuichiro*; Settai, Rikio*; Onuki, Yoshichika

Journal of Physics; Conference Series, 121(5), p.052001_1 - 052001_5, 2008/07

https://doi.org/10.1088/1742-6596/121/5/052001
 Times Cited Count：2 Percentile：60.82(Physics, Multidisciplinary)

We investigated the pressure-induced superconductor CeIrSi$$_3$$ without inversion center under high pressure. The electrical resistivity and ac heat capacity were measured in the same run for the same sample. The critical pressure of the antiferromagnetic state was determined to be $$P_{rm c}$$ = 2.25 GPa. The co-existence of the antiferromagnetism and superconductivity is discussed. The superconducting region is extended up to about 3.5 GPa. The superconducting transition temperature $$T_{rm sc}$$ shows a maximum value of 1.6 K around $$2.5-2.7$$ GPa. At 2.58 GPa, a large heat capacity anomaly was observed at $$T_{rm sc}$$ = 1.59 K. The jump of the heat capacity in the form of $${Delta}{C_{rm ac}}/C_{rm ac}(T_{rm sc})$$ is 5.7 $$pm$$ 0.1. This is the largest observed value among all superconductors studied previously, suggesting the strong-coupling superconductivity in CeIrSi$$_3$$.

Journal Articles

AC heat capacity and resistivity measurements on the pressure-induced superconductor CeIrSi$$_3$$ without inversion center

Tateiwa, Naoyuki; Haga, Yoshinori; Ikeda, Shugo; Matsuda, Tatsuma; Yamamoto, Etsuji; Okuda, Yusuke*; Miyauchi, Yuichiro*; Settai, Rikio*; Onuki, Yoshichika*

Physica B; Condensed Matter, 403(5-9), p.1156 - 1158, 2008/04

https://doi.org/10.1016/j.physb.2007.10.353
 Times Cited Count：1 Percentile：6.29(Physics, Condensed Matter)

We present the result of an antiferromagnet CeIrSi$$_3$$ without inversion center by measureing the heat capacity and the electrical resistivity of CeIrSi$$_3$$. Both physical quantities were measured in the same run for the same single crystal sample. A huge heat capacity anomaly was observed at the superconducting transition temperature $$T_{rm sc}$$ = 1.6 K where the zero-resistivity was observed. The jump of the heat capacity $${Delta}{C_{rm ac}}/C_{rm ac}$$ is 5.7 $$pm$$ 0.1 at 2.58 GPa. This value is the largest among previously reported superconducting materials, indicating the strong coupling superconductivity. The electronic specific heat coefficient just above $$T_{rm sc}$$ is roughly estimated to be 100 $$pm$$ 20 mJ/K$${^2}{cdot}$$mol at 2.58 GPa, which is the same as $$gamma$$ = 120 $$pm$$ 20 mJ/K$${^2}{cdot}$$mol at ambient pressure.

Journal Articles

Ground state magnetic structure of Ce$$_2$$Ni$$_3$$Ge$$_5$$

Honda, Fuminori; Metoki, Naoto; Matsuda, Tatsuma; Haga, Yoshinori; Thamizhavel, A.*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika

Journal of Alloys and Compounds, 451(1-2), p.504 - 506, 2008/02

https://doi.org/10.1016/j.jallcom.2007.04.191
 Times Cited Count：6 Percentile：39.5(Chemistry, Physical)

no abstracts in English

Journal Articles

Strong-coupling superconductivity of CeIrSi$$_3$$ with He non-centrosymmetric crystal structure

Tateiwa, Naoyuki; Haga, Yoshinori; Matsuda, Tatsuma; Ikeda, Shugo; Yamamoto, Etsuji; Okuda, Yusuke*; Miyauchi, Yuichiro*; Settai, Rikio*; Onuki, Yoshichika

Journal of the Physical Society of Japan, 76(8), p.083706_1 - 083706_4, 2007/08

https://doi.org/10.1143/JPSJ.76.083706
 Times Cited Count：52 Percentile：99.65(Physics, Multidisciplinary)

We studied the pressure-induced superconductor CeIrSi$$_3$$ with the non-centrosymmetric tetragonal structure under high pressure. The electrical resistivity and ac heat capacity were measured in the same run for the same sample. The critical pressure was determined to be $$P_{rm c}$$ = 2.25 GPa, where the antiferromagnetic state disappears. The superconducting region is extended to high pressures of up to about 3.5 GPa, with the maximum transition temperature $$T_{rm sc}$$ = 1.6 K around $$2.5-2.7$$ GPa. At 2.58 GPa, a large heat capacity anomaly was observed at $$T_{rm sc}$$ = 1.59 K. The jump of the heat capacity in the form of $${Delta}{C_{rm ac}}/C_{rm ac}(T_{rm sc})$$ is 5.7 $$pm$$ 0.1. This is the largest observed value among previously reported superconductors, indicating the strong-coupling superconductivity.

Journal Articles

Magnetic and superconducting properties of LaIrSi$$_3$$ and CeIrSi$$_3$$ with the non-centrosymmetric crystal structure

Okuda, Yusuke*; Miyauchi, Yuichiro*; Ida, Yuki*; Takeda, Yuji*; Tonohiro, Chie*; Ozuchi, Yasuhiro*; Yamada, Tsutomu*; Nguyen, D.; Matsuda, Tatsuma; Haga, Yoshinori; et al.

Journal of the Physical Society of Japan, 76(4), p.044708_1 - 044708_11, 2007/04

https://doi.org/10.1143/JPSJ.76.044708
 Times Cited Count：87 Percentile：91.73(Physics, Multidisciplinary)

Single crystals of LaIrSi$$_3$$ and CeIrSi$$_3$$ were grown by the Czochralski pulling method in a tetra-arc furnace and the magnetic and superconducting properties, together with super- conductivity in CeIr$$_{1-x}$$Co$$_x$$Si$$_3$$, were clarified by measuring the electrical resistivity, specific heat, magnetic susceptibility, magnetization and de Haas-van Alphen (dHvA) effect. From the results of the dHvA experiment for LaIrSi$$_3$$, the Fermi surface is found to split into two Fermi surfaces due to the spin-orbit interaction arising from the non-centrosymmetric crystal structure. The electronic state of CeIrSi$$_3$$ is tuned from the antiferro- magnetic state to the superconducting state by applying pressure. The upper critical field H$$_{c2}$$(0) at a pressure of 2.65 GPa is found to be highly anisotropic. Large magnitude and anisotropy of H$$_{c2}$$(0) in CeIrSi$$_3$$ are consistent with the theoretical prediction for superconductivity in the non-centrosymmetric crystal structure.

Journal Articles

Single crystal growth and magnetic properties of antiferromagnet Ce$$_2$$Pd$$_3$$Si$$_5$$

Nguyen, D.; Haga, Yoshinori; Matsuda, Tatsuma; Yamada, Tsutomu*; Thamizhavel, A.*; Okuda, Yusuke*; Takeuchi, Tetsuya*; Sugiyama, Kiyohiro*; Hagiwara, Masayuki*; Kindo, Koichi*; et al.

Journal of the Physical Society of Japan, 76(2), p.024702_1 - 024702_6, 2007/02

https://doi.org/10.1143/JPSJ.76.024702
 Times Cited Count：5 Percentile：37.23(Physics, Multidisciplinary)

We succeeded in growing a single crystal of Ce$$_2$$Pd$$_3$$Si$$_5$$ with the orthorhombic crystal structure by the Sn-flux method and measured the electrical resistivity, specific heat, magnetic susceptibility and magnetization. The antiferromagnetic ordering was confirmed to be $$T_{rm N}$$ = 7.2 K. The electronic specific heat coefficient was determined as 77 mJ/K$$^2cdot$$mol$$cdot$$Ce. The antiferromagnetic easy-axis was found to be the [001] direction, with an ordered moment of $$mu_{rm s}$$ = 1.3 $$mu_{rm B}$$/Ce, while [100] and [010] directions are hard-axes in magnetization. We observed a metamagnetic transition at 5.7 T for $$Hparallel$$[001] and a saturation of magnetization above 12.1 T. The characteristic magnetic phase diagram was constructed. The crystalline electric field (CEF) scheme was proposed for Ce$$_2$$Pd$$_3$$Si$$_5$$, where the splitting energies between the ground state and two excited doublets in the CEF scheme are estimated to be 87 K and 504 K, respectively.

Journal Articles

Magnetic and electrical properties in CePtSi$$_{3}$$ without inversion symmetry in the crystal structure

Kawai, Tomoya*; Okuda, Yusuke*; Shishido, Hiroaki*; Thamizhavel, A.*; Matsuda, Tatsuma; Haga, Yoshinori; Nakashima, Miho*; Takeuchi, Tetsuya*; Hedo, Masato*; Uwatoko, Yoshiya*; et al.

Journal of the Physical Society of Japan, 76(1), p.014710_1 - 014710_6, 2007/01

https://doi.org/10.1143/JPSJ.76.014710
 Times Cited Count：22 Percentile：70.98(Physics, Multidisciplinary)

We succeeded in growing a single crystal of CePtSi$$_{3}$$ by the Sn-flux method. CePtSi$$_{3}$$ is found to be an antiferromagnet with two transitions at 4.8 and 2.4 K. Magnetic easy direction was [100] direction with an ordered moment of 1.15 $$mu_{rm B}$$/Ce. The anisotropy is similar to that of CeIrSi$$_{3}$$ in which the pressure-induced superconductivity was observed.

Journal Articles

Fermi surface property of CeCoGe$$_3$$ and LaCoGe$$_3$$ without inversion symmetry in the tetragonal crystal structure

Thamizhavel, A.*; Shishido, Hiroaki*; Okuda, Yusuke*; Harima, Hisatomo*; Matsuda, Tatsuma; Haga, Yoshinori; Settai, Rikio*; Onuki, Yoshichika

Journal of the Physical Society of Japan, 75(4), p.044711_1 - 044711_7, 2006/06

https://doi.org/10.1143/JPSJ.75.044711
 Times Cited Count：27 Percentile：75.14(Physics, Multidisciplinary)

We carried out the de Haas-van Alphen (dHvA) experiment of an antiferromagnet CeCoGe$$_3$$ and its reference compound LaCoGe$$_3$$ without inversion symmetry in the tetragonal crystal structure. The detected dHvA branches are similar between the two compounds. All the dHvA branches in LaCoGe$$_3$$ are well explained by the results of energy band calculations. There exist three types of compenstated Fermi surfaces. Each Fermi surface is found to consist of two types of similar Fermi surfaces, which is characteristic in the crystal structure without inversion symmetry. The main dHvA branch of LaCoGe$$_3$$ is found to possess the relatively large cyclotron mass $$m_c^*simeq$$10$$m_0$$ ($$m_0$$: rest mass of an electron), which is compared to 1m_0 in LaCoGe$$_3$$.

Journal Articles

Anisotropic magnetic properties of Ce$$_2$$Ni$$_3$$Ge$$_5$$ single crystal

Thamizhavel, A.*; Sugitani, Ichiro*; Obiraki, Yoshiko*; Nakashima, Miho*; Okuda, Yusuke*; Matsuda, Tatsuma; Haga, Yoshinori; Takeuchi, Tetsuya*; Sugiyama, Kiyohiro*; Settai, Rikio*; et al.

Physica B; Condensed Matter, 378-380, p.841 - 842, 2006/05

https://doi.org/10.1016/j.physb.2006.01.483
 Times Cited Count：0 Percentile：0(Physics, Condensed Matter)

We have succeeded in growing single crystals of Ce$$_2$$Ni$$_3$$Ge$$_5$$, which crystallizes in the orthorhombic crystal structure, by the flux method and studied the anisotropic physical properties by measuring the electrical resistivity, magnetic susceptibility and specific heat. The results of these measurements indicate that Ce$$_2$$Ni$$_3$$Ge$$_5$$ undergoes two antiferromagnetic transitions at $$T_{N1}$$=4.9 K and $$T_{N2}$$=4.3 K. The electrical resistivity and susceptibility measurements reveal strong anisotropic magnetic properties. From the specific heat measurement the electronic specific heat coefficient was found to be 90mJ/K$$^2$$mol.

Journal Articles

Pressure-induced heavy-fermion superconductivity in antiferromagnet CeIrSi$$_3$$ without inversion symmetry

Sugitani, Ichiro*; Okuda, Yusuke*; Shishido, Hiroaki*; Yamada, Tsutomu*; Thamizhavel, A.*; Yamamoto, Etsuji; Matsuda, Tatsuma; Haga, Yoshinori; Takeuchi, Tetsuya*; Settai, Rikio*; et al.

Journal of the Physical Society of Japan, 75(4), p.043703_1 - 043703_4, 2006/04

https://doi.org/10.1143/JPSJ.75.043703
 Times Cited Count：338 Percentile：98.83(Physics, Multidisciplinary)

We report the discovery of pressure-induced superconductivity in an antiferromagnet CeIrSi$$_3$$, which lacks inversion symmetry in the tetragonal crystal structure. The Neel temperature $$T_N$$ = 5.0 K at ambient pressure decreases monotonically with increasing pressure, and becomes zero at about 2.5 GPa. Superconductivity appears in a wide pressure region from 1.8 GPa to about 3.5 GPa, with a relatively large superconduting transition temperature Tsc= 1.6 K and a large upper critical field $$H_{c2}$$(0) = 11.1 T at 2.5 GPa, indicating heavy-fermion superconductivity.

Oral presentation

Magnetic structure of Ce$$_2$$Ni$$_3$$Ge$$_5$$

Honda, Fuminori; Metoki, Naoto; Matsuda, Tatsuma; Haga, Yoshinori; Tamizhavel, A.*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika

no journal, , 

no abstracts in English

Oral presentation

Magnetic structures in Ce$$_2$$Ni$$_3$$Ge$$_5$$

Honda, Fuminori; Metoki, Naoto; Matsuda, Tatsuma; Haga, Yoshinori; Thamizhavel, A.*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika

no journal, , 

no abstracts in English

Oral presentation

Electrical resistivity and heat capacity measurements on the pressure induced superconductor CeIrSi$$_3$$

Tateiwa, Naoyuki; Haga, Yoshinori; Matsuda, Tatsuma; Ikeda, Shugo; Yamamoto, Etsuji; Okuda, Yusuke*; Miyauchi, Yuichiro*; Settai, Rikio*; Onuki, Yoshichika

no journal, , 

High pressure experiments were performed on the pressure-induced superconductor CeIrSi$$_3$$ without inversion center. The critical pressure of the antiferromagnetic state was determined to be $$P_{rm c}$$ = 2.25 GPa. The co-existence of the antiferromagnetism and superconductivity is discussed. The superconducting region is extended up to about 3.5 GPa. The superconducting transition temperature $$T_{rm sc}$$ shows a maximum value of 1.6 K around $$2.5-2.7$$ GPa. At 2.58 GPa, a large heat capacity anomaly was observed at $$T_{rm sc}$$ = 1.59 K. The jump of the heat capacity in the form of $${Delta}{C_{rm ac}}/C_{rm ac}(T_{rm sc})$$ is 5.7 $$pm$$ 0.1. This is the largest observed value among all superconductors studied previously, suggesting the strong-coupling superconductivity in CeIrSi$$_3$$.

Oral presentation

Electronic structure of CeIrSi$$_3$$ studied by angle-resolved resonant photoemission spectroscopy

Toshimitsu, Takafumi; Okochi, Takuo; Yasui, Akira; Kobayashi, Masaki*; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi*; Yamagami, Hiroshi*; Miyauchi, Yuichiro*; et al.

no journal, , 

We performed angle-resolved resonant photoemission spectroscopy on CeIrSi$$_3$$. CeIrSi$$_3$$ is said to be the superconductor which lacks inversion symmetry and therefore the measurements of electronic conductivity, magnetoresistance, dHvA, and so on, have been made on so far. In this study, we observed extremely clear 4$$f$$ derived band dispersions and Fermi surfaces. By these obtained profiles and comparison with those predicted by LDA calculation, Ce 4$$f$$ electrons in CeIrSi$$_3$$ have relatively itinerant electronic states.

Oral presentation

Electrical resistivity and heat capacity measurements on the non-centrosymmetric superconductor CeIrSi$$_3$$ under high pressure

Tateiwa, Naoyuki; Haga, Yoshinori; Matsuda, Tatsuma; Ikeda, Shugo; Miyauchi, Yuichiro*; Okuda, Yusuke*; Settai, Rikio*; Onuki, Yoshichika

no journal, , 

Recently, non-centrosymmetric superconductors have attracted much attention from a view point of a mixed parity of a superconducting pair wave function. CeIrSi$$_3$$ crystalizes in the tetragonal BaNiSn$$_3$$-type crystal structure. It shows an antiferromagnetic ordering at $$T_{rm N}$$ = 5.0 K and becomes a superconductor above 2 GPa. In this study, we have investigated CeIrSi$$_3$$ by measurements of the heat capacity and electrical resistivity under high pressure. We will discuss the bulk superconducting phase.

Oral presentation

Electronic structure of CeIrSi$$_{3}$$ and LaIrSi$$_{3}$$ by angle-resolved photoemission spectroscopy

Toshimitsu, Takafumi; Okochi, Takuo; Yasui, Akira; Kobayashi, Masaki*; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi; Yamagami, Hiroshi; Miyauchi, Yuichiro*; et al.

no journal, , 

no abstracts in English

Oral presentation

4f band structure and Fermi surfaces of CeIrSi$$_3$$ by soft X-ray angle-resolved resonant photoemission spectroscopy

Okochi, Takuo; Yasui, Akira; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi*; Yamagami, Hiroshi; Miyauchi, Yuichiro*; Okuda, Yusuke*; Settai, Rikio*; et al.

no journal, , 

We have investigated the bulk 4$$f$$ electronic structure of the non-centrosymmetric superconductor, CeIrSi$$_3$$ by soft X-ray angle-resolved photoemission spectroscopy. We have performed the angle-resolved 3$$d$$-4$$f$$ resonant photoemission and the comparison of the angle-resolved photoemission spectra of CeIrSi$$_3$$ with those of non-$$f$$ reference compound, LaIrSi$$_3$$ and revealed that the 4$$f$$ states of CeIrSi$$_3$$ well hybridized with the non-$$f$$ conduction bands.

24 (Records 1-20 displayed on this page)