Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 54

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Molecular geochemistry of radium; A key to understanding cation adsorption reaction on clay minerals

Yamaguchi, Akiko; Kurihara, Yuichi*; Nagata, Kojiro*; Tanaka, Kazuya; Higaki, Shogo*; Kobayashi, Toru; Tanida, Hajime; Ohara, Yoshiyuki*; Yokoyama, Keiichi; Yaita, Tsuyoshi; et al.

Journal of Colloid and Interface Science, 661, p.317 - 332, 2024/05

no abstracts in English

Journal Articles

High-sensitive XANES analysis at Ce L$$_{2}$$-edge for Ce in bauxites using transition-edge sensors; Implications for Ti-rich geological samples

Li, W.*; Yamada, Shinya*; Hashimoto, Tadashi; Okumura, Takuma*; Hayakawa, Ryota*; Nitta, Kiyofumi*; Sekizawa, Oki*; Suga, Hiroki*; Uruga, Tomoya*; Ichinohe, Yuto*; et al.

Analytica Chimica Acta, 1240, p.340755_1 - 340755_9, 2023/02

 Times Cited Count:1 Percentile:34.31(Chemistry, Analytical)

no abstracts in English

Journal Articles

Extended X-ray absorption fine structure spectroscopy measurements and ${it ab initio}$ molecular dynamics simulations reveal the hydration structure of the radium(II) ion

Yamaguchi, Akiko; Nagata, Kojiro*; Kobayashi, Keita; Tanaka, Kazuya; Kobayashi, Toru; Tanida, Hajime; Shimojo, Kojiro; Sekiguchi, Tetsuhiro; Kaneta, Yui; Matsuda, Shohei; et al.

iScience (Internet), 25(8), p.104763_1 - 104763_12, 2022/08

 Times Cited Count:3 Percentile:54.33(Multidisciplinary Sciences)

no abstracts in English

Journal Articles

Investigation of hydration and adsorption structures on clay minerals of radium by EXAFS

Yamaguchi, Akiko; Nagata, Kojiro*; Tanaka, Kazuya; Kobayashi, Keita; Kobayashi, Toru; Shimojo, Kojiro; Tanida, Hajime; Sekiguchi, Tetsuhiro; Kaneta, Yui; Matsuda, Shohei; et al.

Hosha Kagaku, (45), p.28 - 30, 2022/03

no abstracts in English

Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

 Times Cited Count:2 Percentile:72.87

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

Journal Articles

Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06

The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V$$_{T}$$) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I$$_{D}$$) - drain voltage (V$$_{D}$$) curves are 230 cm$$^{2}$$/Vs for [-110]-perpendicular MOSFETs and 215 cm$$^{2}$$/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I$$_{D}$$ for [-110]-perpendicular MOSFETs is of order of 10-8 A at V$$_{D}$$ = 10V and gate voltage (V$$_{G}$$) of -2V. However, for [-110]-parallel MOSFETs, I$$_{D}$$ shows of order of -10-6 A at V$$_{D}$$ = 10V and V$$_{G}$$ = -2V.

Journal Articles

The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

 Times Cited Count:39 Percentile:77.47(Physics, Applied)

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100$$^{circ}$$C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200$$^{circ}$$C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm$$^{2}$$/Vs. The leakage current of gate oxide was of a few tens of nA/cm$$^{2}$$ at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

The Investigation of 4H-SiC/SiO$$_{2}$$ interfaces by optical and electrical measurements

Ishida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1013 - 1016, 2002/00

 Times Cited Count:4 Percentile:20.35(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Characterization of point defects in cubic silicon carbide using positron annihilation

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

no abstracts in English

Journal Articles

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

Kawasuso, Atsuo; Morishita, Norio; Oshima, Takeshi; Okada, Sohei; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*

Applied Physics A, 67(2), p.209 - 212, 1998/00

 Times Cited Count:41 Percentile:82.9(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Scandium and gallium implantation doping of silicon carbide

T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi

Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with $$gamma$$-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:57.48(Physics, Applied)

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:63.34(Physics, Applied)

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

JAERI-Conf 97-003, p.265 - 268, 1997/03

no abstracts in English

54 (Records 1-20 displayed on this page)