Comparison of the therapeutic effects of [At]NaAt and [I]NaI in an NIS-expressing thyroid cancer mouse model

Watabe, Tadashi*; Liu, Y.*; Kaneda, Kazuko*; Sato, Tatsuhiko; Shirakami, Yoshifumi*; Oe, Kazuhiro*; Toyoshima, Atsushi*; Shimosegawa, Eku*; Wang, Y.*; Haba, Hiromitsu*; et al.

International Journal of Molecular Sciences (Internet), 23(16), p.9434_1 - 9434_11, 2022/08

https://doi.org/10.3390/ijms23169434

In this study, we compare the therapeutic effect between [At]NaAt and [I]NaI. In vitro analysis of double-stranded DNA break (DSB) and colony formation assay were performed using K1-NIS cells. [At]NaAt induced higher numbers of DSBs and had a reduced colony formation than [I]NaI. In K1-NIS mice, dose-dependent therapeutic effects were observed in both [At]NaAt and [I]NaI. The superior therapeutic effect of [At]NaAt suggests the promising clinical applicability of targeted alpha therapy using [At]NaAt in patients with differentiated thyroid cancer refractory to standard [I]NaI treatment.

SENJU; A New time-of-flight single-crystal neutron diffractometer at J-PARC

Ohara, Takashi; Kiyanagi, Ryoji; Oikawa, Kenichi; Kaneko, Koji; Kawasaki, Takuro; Tamura, Itaru; Nakao, Akiko*; Hanashima, Takayasu*; Munakata, Koji*; Moyoshi, Taketo*; et al.

Journal of Applied Crystallography, 49(1), p.120 - 127, 2016/02

https://doi.org/10.1107/S1600576715022943

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

Materials Science Forum, 821-823, p.705 - 708, 2015/07

https://doi.org/10.4028/www.scientific.net/MSF.821-823.705

Radiation resistance of super-straight type amorphous silicon germanium alloy solar cells

Sato, Shinichiro; Meguro, Tomomi*; Suezaki, Takashi*; Yamamoto, Kenji*; Oshima, Takeshi

Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.1825 - 1829, 2014/06

https://doi.org/10.1109/PVSC.2014.6925278

Performance degradation of super-straight type amorphous silicon germanium alloy (a-SiGe) solar cells due to proton irradiation are investigated using an in-situ current-voltage measurement system. The results show that a-Si solar cells have higher radiation resistance than a-SiGe solar cells. Also, the room temperature annealing effects immediately after irradiation are investigated and it is shown that the recovery of the short-circuit current is especially prominent in all the parameters. Based on the obtained results, we propose a radiation hardened design of amorphous silicon alloy multi-junction solar cells.

Measurements of capture rays from the neutron resonances of Se and Se at the J-PARC/MLF/ANNRI

Hori, Junichi*; Yashima, Hiroshi*; Nakamura, Shoji; Furutaka, Kazuyoshi; Hara, Kaoru; Harada, Hideo; Hirose, Kentaro; Kimura, Atsushi; Kitatani, Fumito; Koizumi, Mitsuo; et al.

Nuclear Data Sheets, 119, p.128 - 131, 2014/05

https://doi.org/10.1016/j.nds.2014.08.036

In this work, we measured the capture rays from the neutron resonances of Se and Se. A neutron time-of-flight method was adopted for the measurements with a 4 Ge spectrometer installed at the Accurate Neutron-Nucleus Reaction measurement Instrument (ANNRI) in the J-PARC Material and Life science experimental Facility (MLF). The -ray pulse-height spectra corresponding to the 27-eV resonance of Se and the 113-, 212-, 291-, 342-, 690- and 864-eV resonances of Se were obtained by gating on the TOF regions, respectively. The relative intensities of those primary transitions were derived and compared with the previous experimental data. For the 27-eV resonance of Se, a strong primary transition to the 293-keV state was observed. As for Se, the quite differences of the decay pattern were found between the resonances.

Energy resolution of pulsed neutron beam provided by the ANNRI beamline at the J-PARC/MLF

Kino, Koichi*; Furusaka, Michihiro*; Hiraga, Fujio*; Kamiyama, Takashi*; Kiyanagi, Yoshiaki*; Furutaka, Kazuyoshi; Goko, Shinji*; Hara, Kaoru; Harada, Hideo; Harada, Masahide; et al.

Nuclear Instruments and Methods in Physics Research A, 736, p.66 - 74, 2014/02

https://doi.org/10.1016/j.nima.2013.09.060

Application of JAEA patents for private company products

Aoshima, Atsushi; Suzuki, Yoshiharu; Namekawa, Takashi

Nihon Genshiryoku Gakkai-Shi ATOMO, 55(12), p.733 - 736, 2013/12

https://doi.org/10.3327/jaesjb.55.12_733

no abstracts in English

Full-coherent free electron laser seeded by 13th- and 15th-order harmonics of near-infrared femtosecond laser pulses

Sato, Takahiro*; Iwasaki, Atsushi*; Owada, Shigeki*; Yamanouchi, Kaoru*; Takahashi, Eiji*; Midorikawa, Katsumi*; Aoyama, Makoto; Yamakawa, Koichi; Togashi, Tadashi*; Fukami, Kenji*; et al.

Journal of Physics B; Atomic, Molecular and Optical Physics, 46(16), p.164006_1 - 164006_6, 2013/08

https://doi.org/10.1088/0953-4075/46/16/164006

By introducing 13th- (61.7 nm) and 15th-order harmonics (53.4 nm) of femtosecond laser pulses at 800 nm into an undulator of SCSS (SPring-8 Compact SASE Source) test accelerator at RIKEN, these harmonic pulses were amplified by a factor of more than 10 with a high contrast ratio through the interaction between accelerated electron bunches and the harmonic pulses. From numerical simulations of the amplification processes of high-order harmonic pulses in the undulator, optimum conditions of the electron bunch duration interacting with the high-order harmonic pulses were investigated for generating full-coherent and intense pulses in the extreme ultraviolet wavelength region.

Electronic structures of N-doped graphene with native point defects

Hou, Z.*; Wang, X.*; Ikeda, Takashi; Terakura, Kiyoyuki*; Oshima, Masaharu*; Kakimoto, Masaaki*

Physical Review B, 87(16), p.165401_1 - 165401_16, 2013/04

https://doi.org/10.1103/PhysRevB.87.165401

We have performed the DFT calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. Compared with the case of an isolated N dopant in perfect graphene, the electrons donated by substitutional N dopants would be localized significantly when a N-N pair is formed. The N-N interaction and the interference between native point defect and N dopant strongly modify the role of N doping regarding the free carrier production in the bulk bands. Our results are qualitatively consistent with the experimental observation that the concentration of free electrons introduced by N dopants would be lower than that of doped N.