Refine your search:     
Report No.
 - 
Search Results: Records 1-2 displayed on this page of 2
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Investigation of neutron fluence using fluence monitors for irradiation test at WWR-K

Romanova, N. K.*; Takemoto, Noriyuki

Proceedings of 10th International Conference on Interaction of Radiation with Solids (IRS 2013), p.371 - 373, 2013/09

Irradiation test of a Si ingot is planned using WWR-K in Institute of Nuclear Physics Republic of Kazakhstan (INP RK) to develop an irradiation technology for Si semiconductor production by Neutron Transmutation Doping method in the framework of an international cooperation between INP RK and JAEA, Japan. The preliminary irradiation test using 4 Al ingots was performed to evaluate the actual neutronic irradiation field at the K-23 channel in the WWR-K. Each Al ingot has the same dimension as the Si ingot, and 15 fluence monitors are equipped in it. Iron wire and aluminum-cobalt wire are inserted into them, and it is possible to evaluate both fast and thermal neutron fluxes by measurement of these radiation activities after irradiation. This report describes the results of the preliminary irradiation test and the neutronic calculations by Monte Carlo method in order to evaluate the neutronic irradiation field in the irradiation position for the Si ingot.

JAEA Reports

Design, fabrication and transportation of Si rotating device

Kimura, Nobuaki; Imaizumi, Tomomi; Takemoto, Noriyuki; Tanimoto, Masataka; Saito, Takashi; Hori, Naohiko; Tsuchiya, Kunihiko; Romanova, N. K.*; Gizatulin, S.*; Martyushov, A.*; et al.

JAEA-Technology 2012-012, 34 Pages, 2012/06

JAEA-Technology-2012-012.pdf:12.91MB

Si semiconductor production by Neutron Transmutation Doping (NTD) method using the Japan Materials Testing Reactor (JMTR) has been investigated in Neutron Irradiation and Testing Reactor Center, Japan Atomic Energy Agency (JAEA) in order to expand industry use. As a part of investigations, irradiation test of silicon ingot for development of NTD-Si with high quality was planned using WWR-K in Institute of Nuclear Physics (INP), National Nuclear Center of Republic of Kazakhstan (NNC-RK) based on one of specific topics of cooperation (STC), Irradiation Technology for NTD-Si (STC No.II-4), on the implementing arrangement between NNC-RK and the JAEA for "Nuclear Technology on Testing/Research Reactors" in cooperation in research and development in nuclear energy and technology. As for the irradiation test, Si rotating device was fabricated in JAEA, and the fabricated device was transported with irradiation specimens from JAEA to INP-NNC-RK. This report described the design, the fabrication, the performance test of the Si rotating device and transportation procedures.

2 (Records 1-2 displayed on this page)
  • 1