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Journal Articles

Bound spinon excitations in the spin-$$frac{1}{2}$$ anisotropic triangular antiferromagnet Ca$$_{3}$$ReO$$_{5}$$Cl$$_{2}$$

Nawa, Kazuhiro*; Hirai, Daigoro*; Kofu, Maiko; Nakajima, Kenji; Murasaki, Ryo*; Kogane, Satoshi*; Kimata, Motoi*; Nojiri, Hiroyuki*; Hiroi, Zenji*; Sato, Taku*

Physical Review Research (Internet), 2(4), p.043121_1 - 043121_11, 2020/12

The spin excitations of the $$S$$ = $$frac{1}{2}$$ anisotropic triangular antiferromagnet Ca$$_{3}$$ReO$$_{5}$$Cl$$_{2}$$ were investigated by inelastic neutron-scattering experiments. The spin excitation spectrum exhibits sharp dispersive modes in addition to a spinonlike continuum. The consistency with the simulated spectrum based on the random-phase approximation is better for Ca$$_{3}$$ReO$$_{5}$$Cl$$_{2}$$ than for Cs$$_{2}$$CuCl$$_{4}$$, indicating that the spin system in the former remains closer to a Tomonaga-Luttinger liquidlike disordered state.

Journal Articles

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

Odaka, Hirokazu*; Ichinohe, Yuto*; Takeda, Shinichiro*; Fukuyama, Taro*; Hagino, Koichi*; Saito, Shinya*; Sato, Tamotsu*; Sato, Goro*; Watanabe, Shin*; Kokubun, Motohide*; et al.

Nuclear Instruments and Methods in Physics Research A, 695, p.179 - 183, 2012/12

 Times Cited Count:23 Percentile:84.01(Instruments & Instrumentation)

We have developed a new Si/CdTe semiconductor double-sided strip detector (DSD) Compton camera. The camera consists of a 500-$$mu$$m-thick Si-DSD and four layers of 750-$$mu$$m-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250$$mu$$m. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5 degrees at 356 keV and 3.5 degrees at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

Journal Articles

Applications and imaging techniques of a Si/CdTe Compton $$gamma$$-ray camera

Takeda, Shinichiro*; Ichinohe, Yuto*; Hagino, Koichi*; Odaka, Hirokazu*; Yuasa, Takayuki*; Ishikawa, Shinnosuke*; Fukuyama, Taro*; Saito, Shinya*; Sato, Tamotsu*; Sato, Goro*; et al.

Physics Procedia, 37, p.859 - 866, 2012/10

 Times Cited Count:22 Percentile:98.43(Physics, Applied)

By using new Compton camera consisting of silicon double-sided strip detector (Si-DSD) and CdTe-DSD developed for the ASTRO-H mission, an experiment was conducted to study its feasibility for advanced hotspot monitoring. In addition to hotspot imaging already provided by commercial imaging systems, the identification of the variety of radioisotopes is realized thanks to the good energy resolution given by the semiconductor detectors. Three radioisotopes of $$^{133}$$Ba (356 keV), $$^{22}$$Na (511 keV) and $$^{137}$$Cs (662 keV) were individually imaged by applying event selection in the energy window and the $$gamma$$-ray images was correctly overlapped by an optical picture. The detection efficiency of 1.68$$times$$10$$^{-4}$$ (effective area: 1.7$$times$$10$$^{-4}$$ cm$$^2$$) and angular resolution of 3.8$$^{circ}$$ were obtained by stacking five detector modules for 662 keV $$gamma$$-ray. The higher detection efficiency required in a specific use can be achieved by stacking more detector modules.

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