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Nakanishi, Toshimichi*; Okuno, Mitsuru*; Yamasaki, Keiji*; Hong, W.*; Fujita, Natsuko; Nakamura, Toshio*; Horikawa, Yoshiyuki*; Sato, Eiichi*; Kimura, Haruo*; Tsutsumi, Hiroyuki*
Nagoya Daigaku Nendai Sokutei Kenkyu, 5, p.38 - 43, 2021/03
no abstracts in English
Samarakoon, A. M.*; Takahashi, Mitsuru*; Zhang, D.*; Yang, J.*; Katayama, Naoyuki*; Sinclair, R.*; Zhou, H. D.*; Diallo, S. O.*; Ehlers, G.*; Tennant, D. A.*; et al.
Scientific Reports (Internet), 7(1), p.12053_1 - 12053_8, 2017/09
Times Cited Count：7 Percentile：50.08(Multidisciplinary Sciences)Yamaguchi, Tetsuji; Shimada, Taro; Ishibashi, Makoto*; Akagi, Yosuke*; Kurosawa, Mitsuru*; Matsubara, Akiyoshi*; Matsuda, Yuki*; Sato, Shigeyoshi*
Genshiryoku Bakkuendo Kenkyu (CD-ROM), 22(2), p.21 - 27, 2015/12
It is predictable from previous studies that radiocesium hardly migrate into surrounding soils and groundwater from soils contaminated by the Fukushima Daiichi Nuclear Power Plant accident if they are buried and covered with indigenous soils. This study demonstrated the prediction by performing in-situ migration experiments over a year in a public park in Miho, Ibaraki prefecture and in two public parks in Misato, Saitama prefecture. Contaminated soils were buried at a depth range of 0.3 - 1.0 m or at 0.3 - 1.3 m and covered with indigenous soil layer of 0.3 m, and were sprinkled with water to accelerate the radiocesium migration. Migration of radiocesium was not observed from radiometric analyses of boring cores and soil water samples. Laboratory column and sorption experiments revealed that the radiocesium hardly leach out of the soil and even if they leach out from the contaminated soil, radiocesium is sorbed on surrounding soils and hardly migrate through the soli layer. Simulation of Cs-137 migration for 100 years by an advection-diffusion model showed that Cs-137 hardly migrate and decay out in the contaminated soil.
Shibata, Yuichi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Ooka, Sachiyo*; Takamoto, Tatsuya*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11
Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3
10
e
/cm
showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell.
Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.
Nishikino, Masaharu; Kawachi, Tetsuya; Hasegawa, Noboru; Ishino, Masahiko; Minami, Yasuo*; Suemoto, Toru*; Onishi, Naofumi*; Ito, Atsushi*; Sato, Katsutoshi*; Faenov, A.*; et al.
X-Ray Lasers and Coherent X-Ray Sources; Development and Applications XI (Proceedings of SPIE, Vol.9589), p.958902_1 - 958902_7, 2015/09
Maximenko, S.*; Lumb, M.*; Hoheisel, R.*; Gonz
lez, M.*; Scheiman, D.*; Messenger, S.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; et al.
Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2144 - 2148, 2014/06
In this paper, a complex analysis of the radiation response of GaAs solar cells with multi quantum wells (MQW) incorporated in the i-region of the device is presented. Electronic transport properties of the MQW i-region were assessed experimentally by the electron beam induced current (EBIC) technique. A 2-D EBIC diffusion model was applied to simulate EBIC line scans across device structure for different radiation doses. The results are interpreted using numerical modeling of the electrical field distribution at different radiation levels. Type conversion from n- to p-type was found in MQW i-region at displacement damage dose as low as low as 1
MeV MeV/g. This is supported by experimental and simulated EBIC and electric field distribution results.
Shimazaki, Kazunori*; Kobayashi, Yuki*; Takahashi, Masato*; Imaizumi, Mitsuru*; Murashima, Mio*; Takahashi, Yu*; Toyota, Hiroyuki*; Kukita, Akio*; Oshima, Takeshi; Sato, Shinichiro; et al.
Proceedings of 40th IEEE Photovoltaic Specialists Conference (PVSC-40) (CD-ROM), p.2149 - 2154, 2014/06
The electrical performance of a glass-type space solar sheet (G-SSS) was demonstrated in space. G-SSS comprises InGaP/GaAs dual-junction and InGaP/GaAs/InGaAs triplejunction solar cells. It is lightweight solar generation sheet, less than 0.5 mm thick. It is mounted on the "HISAKI" (SPRINT-A) small scientific satellite, which was launched on September 14, 2013. The initial flight data were successfully acquired and this flight demonstration was a world-first experiment for G-SSS using III-V multi-junction thin-film solar cells. The cells demonstrated superior performance and the electrical outputs matched the flight prediction.
Hoheisel, R.*; Gonzlez, M.*; Lumb, M.*; Scheiman, D.*; Messenger, S. R.*; Bailey, C. G.*; Lorentzen, J.*; Tibbits, T. N. D.*; Imaizumi, Mitsuru*; Oshima, Takeshi; et al.
IEEE Journal of Photovoltaics, 4(1), p.253 - 259, 2014/01
Times Cited Count：19 Percentile：60.33(Energy & Fuels)Analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. We found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n- or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.
Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*
Progress in Photovoltaics; Research and Applications, 21(7), p.1499 - 1506, 2013/11
Times Cited Count：6 Percentile：26.92(Energy & Fuels)Proton degradation behaviors of hydrogenated amorphous silicon (a-Si:H) solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post-irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short-circuit current, open-circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short-circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a-Si:H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests.
Sato, Takahiro*; Iwasaki, Atsushi*; Owada, Shigeki*; Yamanouchi, Kaoru*; Takahashi, Eiji*; Midorikawa, Katsumi*; Aoyama, Makoto; Yamakawa, Koichi; Togashi, Tadashi*; Fukami, Kenji*; et al.
Journal of Physics B; Atomic, Molecular and Optical Physics, 46(16), p.164006_1 - 164006_6, 2013/08
Times Cited Count：3 Percentile：19.06(Optics)By introducing 13th- (61.7 nm) and 15th-order harmonics (53.4 nm) of femtosecond laser pulses at 800 nm into an undulator of SCSS (SPring-8 Compact SASE Source) test accelerator at RIKEN, these harmonic pulses were amplified by a factor of more than 10
with a high contrast ratio through the interaction between accelerated electron bunches and the harmonic pulses. From numerical simulations of the amplification processes of high-order harmonic pulses in the undulator, optimum conditions of the electron bunch duration interacting with the high-order harmonic pulses were investigated for generating full-coherent and intense pulses in the extreme ultraviolet wavelength region.
Ishibashi, Kenji*; Uesaka, Mitsuru*; Morita, Koji*; Sato, Yasushi*; Iimoto, Takeshi*; Watanabe, Yukinobu*; Unesaki, Hironobu*; Yamano, Hidemasa
Nihon Genshiryoku Gakkai-Shi ATOMO
, 55(7), p.403 - 406, 2013/07
Japan-Korea Exchange program has been successful and their joint sessions have been accompanying conferences. With this background, younger generation's communication has been recognized as important role in Japan and Korea's joint cooperation. Thus students and young researchers support program has started. Understanding the achievements and the current status is important, expecting unrelated areas and working groups to show interest and hopefully join this area of work.
Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Tajima, Michio*; Sato, Shinichiro; Oshima, Takeshi
Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.3243 - 3248, 2013/06
Radiation response of InGaP, GaAs, InGaAs (In=20%) and InGaAs (In=30%) single-junction solar cells, which are the component sbcells of IMM3J cells, were comparatively studied. High-energy electrons (1 MeV) and protons (10 MeV) were irradiated to the four types of the cells. The InGaP cell has the highest radiation resistance to both electrons and protons amongst the four cells as expected. On the other hand, the InGaAs cells have less resistant for Isc compared to InGaP and GaAs cells. However, the resistance of Voc of InGaAs cells is comparable to that of the other two cells. As a general result, InGaAs cells have less radiation resistance to electrons, while they have the resistance against protons equivalent to GaAs cell. These radiation response properties of InGaAs cells are thought to be useful to design radiation resistant IMM3J space solar cells.
Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi
Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.0696 - 0700, 2013/06
The estimation method of subcell photocurrent (I
) in multi-junction solar cells using not external quantum efficiency (EQE) but light current-voltage (LIV) characteristics after irradiation is proposed. To obtain I of each subcell, it is necessary to estimate the reverse saturation current density (J
) and shunt resistance (R
) of each subcell using EL and LED bias light (LBL) method. Since estimated I is in agreement with experimental LIV characteristics under illumination of AM0 solar simulator, we can evaluate of complicated maximum power (Pmax) of the inverted metamorphic triple-junction (IMM3J) solar cell after irradiation.
Sugai, Mitsunobu*; Harada, Jiro*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi
Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.0715 - 0720, 2013/06
no abstracts in English
Gonzlez, M.*; Hoheisel, R.*; Lumb, M.*; Scheiman, D.*; Bailey, C. G.*; Lorentzen, J.*; Maximenko, S.*; Messenger, S. R.*; Jenkins, P. P.*; Tibbits, T. N. D.*; et al.
Proceedings of 39th IEEE Photovoltaic Specialists Conference (PVSC-39) (CD-ROM), p.3233 - 3236, 2013/06
The radiation response of multi quantum wall (MQW) triple junction and component cells was analyzed. Initial results show that for 1MeV electron irradiation the middle MQW cell governs the degradation of the triple junction. This is attributed the specific middle cell design, in particular the thick 0.98 
m depletion region, and alternative, more radiation hard, designs are presented. Additionally, characterization studies, including dark IV, external quantum efficiency, electroluminescence, as well as defect characterization were investigated.
Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*
Solar Energy Materials and Solar Cells, 108, p.263 - 268, 2013/01
Times Cited Count：13 Percentile：49.45(Energy & Fuels)GaAs solar cells which have a PiN structure with 50 self-organized In
Ga
As Quantum Dot (QD) layers were irradiated with 1 MeV electrons up to 110
/cm. After irradiation at 110/cm, the remaining factor of I
, V
and P
for the InGaAs 50 QD solar cell becomes 80, 90 and 55% of the initial values, respectively. On the other hand, those values for non QD GaAs solar cells decrease to 95, 80 and 63% of the initial values, respectively. Since the i-layer for the 50 QD solar cells (1.1 m) is thicker than the non QD solar cells (660 nm), the larger degradation of I for the 50 QD solar cells than the non QD ones can be interpreted in terms that the carrier recombination in the i-layer for the 50 QD solar cells is larger than that for the non QD solar cells. For V, the 50 QD solar cells showes better radiation resistance than the non QD solar cells. Furthermore, the annealing behavior of the electrical characteristics for the 50 QD and the non QD solar cells was investigated at RT under AM 0 immediately after the irradiation. As a result, the recovery of the electrical characteristics for both solar cells was observed, and the GaAs solar cells shows relatively larger recovery compared to the 50 QD solar cells. Although the mechanism of this recovery has not yet been clarified, the origin of this recovery is thought not to come from the existence of QDs because the GaAs solar cell without QD layers also shows the recovery.
Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sugai, Mitsunobu*; Sato, Shinichiro; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.48 - 51, 2012/12
Recently a new method was proposed that estimating the current-voltage (IV) characteristics of subcells in a multi-junction (MJ) solar cell by using electroluminescence (EL). The estimated IV characteristics of electron-irradiated MJ solar cell from the IV curve obtained from each subcell agreed well with the actual dark IV (DIV) and light IV (LIV) characteristics, except for series resistance (
) and shunt resistance (
). of a MJ cells and of subcells can be also clarified through measurement LIV characteristics using color bias lights and circuit simulation program. In this work, we applied this method to InGaP/GaAs dual-junction (2J) solar cells irradiated with electrons. As a result, we succeeded to predict the degradation curve of maximum power of the 2J solar cell where the current-limiting subcell changes from InGaP to GaAs subcell using degradation curve of each parameter.
Onoue, Tetsuji*; Sato, Honami*; Nakamura, Tomoki*; Noguchi, Takaaki*; Hidaka, Yoshihiro*; Shirai, Naoki*; Ebihara, Mitsuru*; Osawa, Takahito; Hatsukawa, Yuichi; Toh, Yosuke; et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(47), p.19134 - 19139, 2012/11
Times Cited Count：40 Percentile：72.81(Multidisciplinary Sciences)The 34 million year (My) interval of the Late Triassic is marked by the formation of several large impact structures on Earth. As with the Chicxulub impact event at the Cretaceous/Paleogene boudary, the Late Triassic impact events have been considered a factor in biotic extinction events in the Late Triassic (e.g., the Triassic/Jurassic boundary). However, the causal link between these impact events and a mass extinction event in the Late Triassic remains controversial because of a lack of stratigraphic records of their ejecta deposits. Here we report evidence for an impact event (platinum group elements anomaly, nickel-rich magnetite and microspherules) deposited within a Paleo-Pacific basin in the middle Norian (Upper Triassic) deep-sea sediment in Japan. This includes anomalously high abundances of iridium, up to 41.5 parts per billion (ppb), in the ejecta deposit, which suggests that the iridium anomaly may be found on a global scale. The middle Norian age of the ejecta deposit suggests that the impact event that produced the 100-km-wide Manicouagan crater in Canada8 is most likely related to its deposition. Our analysis of siliceous microfossils shows no evidence of a mass extinction event across the impact event horizon, and no contemporaneous faunal turnover is seen in other marine fossils. However, such an event has been reported among terrestrial tetrapods and floras in North America. We therefore hypothesize that the Manicouagan impact caused the catastrophic collapse of terrestrial ecosystems near the impact site, but not within the marine realm.
Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*
Journal of Non-Crystalline Solids, 358(17), p.2039 - 2043, 2012/09
Times Cited Count：5 Percentile：31.14(Materials Science, Ceramics)Electrical conductivity variations of undoped, n-type and p-type hydrogenated amorphous silicon (a-Si:H) thin films irradiated with various energy protons are systematically investigated in this study. Dark conductivity (DC) and photoconductivity (PC) of the undoped samples increased at first due to proton irradiation and then decrease dramatically with increasing proton fluence. However, increased PC was metastable and gradually decreased with time. Similar results were observed in the n-type a-Si:H, whereas the monotonic decrease was observed in the p-type one. The degrees of the DC and the PC decreases became lower as the irradiated proton energy was higher. The increases of both DC and PC are attributed to the temporal donor like center generation, although the additional proton irradiation decrease both the DC and PC by the accumulation of radiation-induced defects, which are act as deep traps and compensate carriers.
