Refine your search:     
Report No.
 - 
Search Results: Records 1-7 displayed on this page of 7
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Impression on attending The 20th Anniversary International Symposium in Honor of J.G. Bednorz and K.A. Muller

Arai, Masatoshi; Ando, Yoichi*; Oyanagi, Hiroyuki*; Kamimura, Hiroshi*; Takashige, Masaaki*; Maeno, Yoshiteru*

Kotai Butsuri, 41(8), p.529 - 539, 2006/08

no abstracts in English

Journal Articles

Crystallization process of ferroelectric Bi$$_4$$Ti$$_3$$O$$_{12}$$ from amorphous state

Yoneda, Yasuhiro; Mizuki, Junichiro; Kohara, Shinji*; Hamazaki, Shinichi*; Takashige, Masaaki*

Journal of Applied Physics, 99(7), p.074108_1 - 074108_5, 2006/04

 Times Cited Count:6 Percentile:24.62(Physics, Applied)

no abstracts in English

Journal Articles

X-ray diffraction topography on ferroelectric materials

Yoneda, Yasuhiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*; Mizuki, Junichiro

Transactions of the Materials Research Society of Japan, 30(1), p.51 - 54, 2005/03

no abstracts in English

Journal Articles

X-ray topography on domain-controlled BaTiO$$_3$$ crystals

Yoneda, Yasuhiro; Mizuki, Junichiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*

Japanese Journal of Applied Physics, 43(9B), p.6821 - 6824, 2004/09

 Times Cited Count:9 Percentile:37.46(Physics, Applied)

no abstracts in English

Journal Articles

X-ray diffraction topography on a BaTiO$$_3$$ crystal

Yoneda, Yasuhiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*

Journal of the Physical Society of Japan, 73(4), p.1050 - 1053, 2004/04

We have observed 90 $$^{circ}$$C domain walls in a bulk BaTiO$$_3$$ crystal by Synchrotron radiation topography, coupled with a CCD detector. The BaTiO$$_3$$ multi-domain crystal was revealed to be strained at the 90 $$^{circ}$$C domain boundary. The polar direction of the BaTiO$$_3$$ crystal was tilted by this starin, and this strain also causes the irregular angle of the surface bending mode. The Synchrotron X-ray topography can be performed on a sample with electrodes. The topographic image of the ferroelectric doamin with an electric field clarified that the well-known stripe domain configuration can not be observed without a weak electric field due to the lattice strain at the doamin boundary.

Journal Articles

X-ray diffraction topography on a BaTiO$$_3$$ crystal

Yoneda, Yasuhiro; Komura, Yoshiki*; Suzuki, Yoshio*; Hamazaki, Shinichi*; Takashige, Masaaki*

Journal of the Physical Society of Japan, 73(4), p.1050 - 1053, 2004/04

 Times Cited Count:11 Percentile:55.67(Physics, Multidisciplinary)

We have observed 90$$^{circ}$$ domain walls in a bulk BaTiO$$_3$$ crystal by Synchrotron radiation topography, coupled with a CCD detector. The BaTiO$$_3$$ multi-domain crystal was revealed to be strained at the 90$$^{circ}$$ domain boundary. The polar direction of the BaTiO$$_3$$ crystal was tilted by this starin, and this strain also causes the irregular angle of the surface bending mode. The Synchrotron X-ray topography can be performed on a sample with electrodes. The topographic image of the ferroelectric doamin with an electric field clarified that the well-known stripe domain configuration can not be observed without a weak electric field due to the lattice strain at the doamin boundary.

Journal Articles

Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Yasuhiro; Mizuki, Junichiro; Katayama, Ryoko*; Yagi, Kenichiro*; Terauchi, Hikaru*; Hamazaki, Shinichi*; Takashige, Masaaki*

Applied Physics Letters, 83(2), p.275 - 277, 2003/07

 Times Cited Count:18 Percentile:57.39(Physics, Applied)

We observed an intermediate structure during the re-crystallization process from the amorphous state of Bi$$_4$$Ti$$_3$$O$$_{12}$$ prepared by rapid quenching. The intermediate structure which appears during the re-crystallization process consists of two phases; one is pyrochlore Bi$$_2$$Ti$$_2$$O$$_7$$ phase and the other is a stacking-fault induced structure under the excessive Bi condition. The microstructure of the stacking-fault induced structure was investigated by synchrotron X-ray diffraction. In the case of a large number of Bi$$_2$$O$$_2$$, some are inserted between the pseudo-perovskite layers of Bi$$_4$$Ti$$_3$$O$$_{12}$$, and a non-stoichiometric Bi$$_2$$WO$$_6$$-like structure is stabilized.

7 (Records 1-7 displayed on this page)
  • 1