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Takamatsu, Misao; Kawahara, Hirotaka; Ito, Hiromichi; Ushiki, Hiroshi; Suzuki, Nobuhiro; Sasaki, Jun; Ota, Katsu; Okuda, Eiji; Kobayashi, Tetsuhiko; Nagai, Akinori; et al.
Nihon Genshiryoku Gakkai Wabun Rombunshi, 15(1), p.32 - 42, 2016/03
In the experimental fast reactor Joyo, it was confirmed that the top of the irradiation test sub-assembly of "MARICO-2" (material testing rig with temperature control) had been broken and bent onto the in-vessel storage rack as an obstacle and had damaged the upper core structure (UCS). This paper describes the results of the in-vessel repair techniques for UCS replacement, which are developed in Joyo. UCS replacement was successfully completed in 2014. In-vessel repair techniques for sodium cooled fast reactors (SFRs) are important in confirming its safety and integrity. In order to secure the reliability of these techniques, it was necessary to demonstrate the performance under the actual reactor environment with high temperature, high radiation dose and remained sodium. The experience and knowledge gained in UCS replacement provides valuable insights into further improvements for In-vessel repair techniques in SFRs.
Ito, Hiromichi; Suzuki, Nobuhiro; Kobayashi, Tetsuhiko; Kawahara, Hirotaka; Nagai, Akinori; Sakao, Ryuta*; Murata, Chotaro*; Tanaka, Junya*; Matsusaka, Yasunori*; Tatsuno, Takahiro*
Proceedings of 2015 International Congress on Advances in Nuclear Power Plants (ICAPP 2015) (CD-ROM), p.1058 - 1067, 2015/05
In the experimental fast reactor Joyo (Sodium-cooled Fast Reactor (SFR)), it was confirmed that the top of the irradiation test sub-assembly had bent onto the in-vessel storage rack as an obstacle and had damaged the upper core structure (UCS). There is a risk of deformation of the UCS and guide sleeve (GS) caused by interference between them unless inclination is controlled precisely. To mitigate the risk, special jack-up equipment for applying three-point suspension was developed. The existing damaged UCS (ed-UCS) jack-up test using the jack-up equipment was conducted on May 7, 2014. As a result of this test, it was confirmed that the ed-UCS could be successfully jacked-up to 1000 mm without consequent overload. The experience and knowledge gained in the ed-UCS jack-up test provides valuable insights and prospects not only for UCS replacement but also for further improving and verifying repair techniques in SFRs.
Nisawa, Atsushi*; Yoneda, Yasuhiro; Ueno, Go*; Murakami, Hironori*; Okajima, Yuka*; Yamamoto, Kenichiro*; Semba, Yasunori*; Uesugi, Kentaro*; Tanaka, Yoshihito*; Yamamoto, Masaki*; et al.
Journal of Synchrotron Radiation, 20(2), p.219 - 225, 2013/03
Times Cited Count:12 Percentile:54.45(Instruments & Instrumentation)A Si(111) winged crystal has been designed to minimize anticlastic bending and improve sagittal focusing efficiency. The crystal was thin with wide stiffening wings. The length-to-width ratio of the crystal was optimized by finite element analysis, and the optimal value was larger than the "golden value". The analysis showed that the slope error owing to anticlastic bending is less than the Darwin width. The X-rays were focused two-dimensionally using the crystal and a tangentially bent mirror. The observed profiles of the focal spot agreed well with the results of a ray-tracing calculation in the energy range from 8 to 17.5 keV. X-ray diffraction measurements with a high signal-to-noise ratio using this focusing system were demonstrated for a small protein crystal.
Oshima, Takeshi; Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Arai, Manabu*; Tanaka, Yasunori*
Physics and Technology of Silicon Carbide Devices, p.379 - 402, 2012/10
SiC is regarded as a promising candidate for electronic devices used in harsh radiation environments because of its high radiation tolerance. Radiation effects on SiC devices are reviewed. Firstly, the Total Ionizing Dose (TID) effect in Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FETs) is introduced. Then, the radiation hardness of SiC based transistors such as MOSFETs, Metal-Semiconductor (MES) FETs, Static Induction Transistors (SITs) is discussed from the point of view of -ray irradiation effects. Transient current induced in SiC pn diodes by heavy ions incidence, which is important information on the single event effects (SEEs), is also expressed.
Ueda, Yoshio*; Oya, Kaoru*; Ashikawa, Naoko*; Ito, Atsushi*; Ono, Tadayoshi*; Kato, Daiji*; Kawashima, Hisato; Kawamura, Gakushi*; Kenmotsu, Takahiro*; Saito, Seiki*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 88(9), p.484 - 502, 2012/09
no abstracts in English
Onuki, Yoshichika; Yasui, Shinichi*; Matsushita, Masaki*; Yoshiuchi, Shingo*; Oya, Masahiro*; Hirose, Yusuke*; Dung, N. D.*; Honda, Fuminori*; Takeuchi, Tetsuya*; Settai, Rikio*; et al.
Journal of the Physical Society of Japan, 80(Suppl.A), p.SA003_1 - SA003_6, 2011/12
Tanaka, Yasunori*; Smirnov, R. D.*; Pigarov, A. Y.*; Takenaga, Hidenobu; Asakura, Nobuyuki; Uesugi, Yoshihiko*; Ono, Noriyasu*
Journal of Nuclear Materials, 415(Suppl.1), p.S1106 - S1110, 2011/08
Times Cited Count:8 Percentile:53.54(Materials Science, Multidisciplinary)Dust can be an important contributor to impurity contamination of the core and scrape-off-layer (SOL) plasmas in tokamak fusion devices. This is the first report about investigation of transport of carbon dust particles in case of JT-60U tokamak using the dust transport code (DUSTT). The DUSTT code takes into account various plasma-dust interaction processes. In the present report, background plasma parameters in JT-60U such as densities and temperatures of electron, ion and neutral atom were computed with the UEDGE code. Three dimensional trajectories, temperature evolution, and radius variation of dust particles launched from different positions at the inner divertor, the outer divertor and the dome structure in JT-60U tokamak were simulated numerically to study dynamics and transport of dust particles there. As a result, the lifetime of dust particles is dependent mainly on the ion density in trajectories in final term.
Inogamov, N. A.*; Anisimov, S. I.*; Petrov, Y. V.*; Khokhlov, V. A.*; Zhakhovskii, V. V.*; Faenov, A. Ya.*; Pikuz, T.; Fortov, V. E.*; Skobelev, I. Y.*; Kato, Yoshiaki*; et al.
Journal of Optical Technology, 78(8), p.473 - 480, 2011/08
Times Cited Count:6 Percentile:33.02(Optics)Oshima, Takeshi; Onoda, Shinobu; Tanaka, Yasunori*; Arai, Manabu*
Isotope News, (686), p.8 - 12, 2011/06
no abstracts in English
Takeuchi, Tetsuya*; Yasui, Shinichi*; Toda, Masatoshi*; Matsushita, Masaki*; Yoshiuchi, Shingo*; Oya, Masahiro*; Katayama, Keisuke*; Hirose, Yusuke*; Yoshitani, Naohisa*; Honda, Fuminori*; et al.
Journal of the Physical Society of Japan, 79(6), p.064609_1 - 064609_15, 2010/06
Times Cited Count:42 Percentile:83.77(Physics, Multidisciplinary)Tanaka, Yasunori*; Onoda, Shinobu; Takatsuka, Akio*; Oshima, Takeshi; Yatsuo, Tsutomu*
Materials Science Forum, 645-648, p.941 - 944, 2010/04
no abstracts in English
Yoshiuchi, Shingo*; Toda, Masatoshi*; Matsushita, Masaki*; Yasui, Shinichi*; Hirose, Yusuke*; Oya, Masahiro*; Katayama, Keisuke*; Honda, Fuminori*; Sugiyama, Kiyohiro*; Hagiwara, Masayuki*; et al.
Journal of the Physical Society of Japan, 78(12), p.123711_1 - 123711_4, 2009/12
Times Cited Count:39 Percentile:82.82(Physics, Multidisciplinary)Osakabe, Masaki*; Shinohara, Koji; Toi, Kazuo*; Todo, Yasushi*; Hamamatsu, Kiyotaka; Murakami, Sadayoshi*; Yamamoto, Satoshi*; Idomura, Yasuhiro; Sakamoto, Yoshiteru; Tanaka, Kenji*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 85(12), p.839 - 842, 2009/12
no abstracts in English
Oya, Kaoru*; Inai, Kensuke*; Shimizu, Katsuhiro; Takizuka, Tomonori; Kawashima, Hisato; Hoshino, Kazuo; Hatayama, Akiyoshi*; Toma, Mitsunori*; Tomita, Yukihiro*; Kawamura, Gakushi*; et al.
Purazuma, Kaku Yugo Gakkai-Shi, 85(10), p.695 - 703, 2009/10
no abstracts in English
Yoshikawa, Hiroshi; Sakaki, Hironao; Sako, Hiroyuki; Takahashi, Hiroki; Shen, G.; Kato, Yuko; Ito, Yuichi; Ikeda, Hiroshi*; Ishiyama, Tatsuya*; Tsuchiya, Hitoshi*; et al.
Proceedings of International Conference on Accelerator and Large Experimental Physics Control Systems (ICALEPCS '07) (CD-ROM), p.62 - 64, 2007/10
J-PARC is a large scale facility of the proton accelerators for the multi-purpose of scientific researches in Japan. This facility consists of three accelerators and three experimental stations. Now, J-PARC is under construction, and LINAC is operated for one year, 3GeV synchrotron has just started the commissioning in this October the 1st. The completion of this facility will be next summer. The control system of accelerators established fundamental performance for the initial commissioning. The most important requirement to the control system of this facility is to minimize the activation of accelerator devices. In this paper, we show that the performances of each layer of this control system have been achieved in the initial stage.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I) - drain voltage (V) curves are 230 cm/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count:39 Percentile:77.47(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
Nakane, Yoshihiro; Harada, Yasunori; Sakamoto, Yukio; Oguri, Tomomi*; Yoshizawa, Michio; Takahashi, Fumiaki; Ishikura, Takeshi*; Fujimoto, Toshiaki*; Tanaka, Susumu; Sasamoto, Nobuo
JAERI-Tech 2003-011, 37 Pages, 2003/03
no abstracts in English
Sato, Yasunori*; Yamaguchi, Daichi*; Oshima, Akihiro*; Kato, Takanori*; Ikeda, Shigetoshi*; Aoki, Yasushi*; Tanaka, Shigeru; Tabata, Yoneho*; Washio, Masakazu*
JAERI-Conf 2003-001, p.245 - 250, 2003/03
no abstracts in English
Kinoshita, Akimasa*; Tanaka, Yasunori*; Tanaka, Tomoyuki*; Fukuda, Kenji*; Arai, Kazuo*; Oshima, Takeshi; Hishiki, Shigeomi
no journal, ,
no abstracts in English