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Journal Articles

Quantum proton entanglement on a nanocrystalline silicon surface

Matsumoto, Takahiro*; Sugimoto, Hidehiko*; Ohara, Takashi; Tokumitsu, Akio*; Tomita, Makoto*; Ikeda, Susumu*

Physical Review B, 103(24), p.245401_1 - 245401_9, 2021/06

 Times Cited Count:0 Percentile:0(Materials Science, Multidisciplinary)

Journal Articles

High-temperature antiferromagnetism in Yb based heavy fermion systems proximate to a Kondo insulator

Suzuki, Shintaro*; Takubo, Ko*; Kuga, Kentaro*; Higemoto, Wataru; Ito, Takashi; Tomita, Takahiro*; Shimura, Yasumichi*; Matsumoto, Yosuke*; Bareille, C.*; Wadachi, Hiroki*; et al.

Physical Review Research (Internet), 3(2), p.023140_1 - 023140_12, 2021/05

We report our experimental discovery of the transition temperature reaching 20 K in a Yb-based compound at ambient pressure. The Mn substitution at the Al site in an intermediate valence state of $$alpha$$-YbAlB$$_4$$ not only induces antiferromagnetic transition at a record high temperature of 20 K but also transforms the heavy-fermion liquid state in $$alpha$$-YbAlB$$_4$$ into a highly resistive metallic state proximate to a Kondo insulator.

Journal Articles

Repeatability and reproducibility of measurements of low dissolved radiocesium concentrations in freshwater using different pre-concentration methods

Kurihara, Momo*; Yasutaka, Tetsuo*; Aono, Tatsuo*; Ashikawa, Nobuo*; Ebina, Hiroyuki*; Iijima, Takeshi*; Ishimaru, Kei*; Kanai, Ramon*; Karube, Jinichi*; Konnai, Yae*; et al.

Journal of Radioanalytical and Nuclear Chemistry, 322(2), p.477 - 485, 2019/11

 Times Cited Count:4 Percentile:21.22(Chemistry, Analytical)

We assessed the repeatability and reproducibility of methods for determining low dissolved radiocesium concentrations in freshwater in Fukushima. Twenty-one laboratories pre-concentrated three of 10 L samples by five different pre-concentration methods (prussian-blue-impregnated filter cartridges, coprecipitation with ammonium phosphomolybdate, evaporation, solid-phase extraction disks, and ion-exchange resin columns), and activity of radiocesium was measured. The z-scores for all of the $$^{137}$$Cs results were within $$pm$$2, indicating that the methods were accurate. The relative standard deviations (RSDs) indicating the variability in the results from different laboratories were larger than the RSDs indicating the variability in the results from each separate laboratory.

Journal Articles

Temperature dependence of electric conductivities in femtosecond laser modified areas in silicon carbide

Deki, Manato*; Oka, Tomoki*; Takayoshi, Shodai*; Naoi, Yoshiki*; Makino, Takahiro; Oshima, Takeshi; Tomita, Takuro*

Materials Science Forum, 778-780, p.661 - 664, 2014/02

 Times Cited Count:2 Percentile:72.57(Crystallography)

no abstracts in English

Journal Articles

Single event gate rupture in SiC MOS capacitors with different gate oxide thicknesses

Deki, Manato*; Makino, Takahiro; Kojima, Kazutoshi*; Tomita, Takuro*; Oshima, Takeshi

Materials Science Forum, 778-780, p.440 - 443, 2014/02

 Times Cited Count:3 Percentile:82.11(Crystallography)

no abstracts in English

Journal Articles

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*

AIP Conference Proceedings 1525, p.654 - 658, 2013/04

 Times Cited Count:0 Percentile:0.05(Physics, Applied)

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 $$^{circ}$$C for 60 min. Circular electrodes with 180 $$mu$$ diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm$$^{2}$$/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm$$^{2}$$/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.

Journal Articles

LET dependence of gate oxide breakdown of SiC-MOS capacitors due to single heavy ion irradiation

Deki, Manato; Makino, Takahiro; Tomita, Takuro*; Hashimoto, Shuichi*; Kojima, Kazutoshi*; Oshima, Takeshi

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.78 - 81, 2012/12

Metal-Oxide-Semiconductor (MOS) capacitors fabricated on Silicon Carbide (SiC) under applied biases were irradiated with heavy ions. The relationship between critical electric field (E$$_{rm CR}$$) and Linear Energy Transfer (LET) was investigated. As a results of 9 MeV-Ni, 18 MeV-Ni, Kr-322 MeV and 454 MeV-Xeirradiation (the values of LET are 14.6, 23.8, 42.2 and 73.2 MeV cm$$^{2}$$/mg, respectively), reciprocal value of E$$_{rm CR}$$ increases with increasing LET. The similar relationship was also reported Si MOS capacitors. However, the increase in SiC MOS capacitors is smaller than that in Si ones because the generation energy of one electron-hole pair for SiC is larger than that for Si.

Journal Articles

In-vessel tritium

Ueda, Yoshio*; Oya, Kaoru*; Ashikawa, Naoko*; Ito, Atsushi*; Ono, Tadayoshi*; Kato, Daiji*; Kawashima, Hisato; Kawamura, Gakushi*; Kenmotsu, Takahiro*; Saito, Seiki*; et al.

Purazuma, Kaku Yugo Gakkai-Shi, 88(9), p.484 - 502, 2012/09

no abstracts in English

Journal Articles

Identified charged hadron production in $$p + p$$ collisions at $$sqrt{s}$$ = 200 and 62.4 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Yasuyuki*; Al-Bataineh, H.*; Alexander, J.*; Aoki, Kazuya*; Aphecetche, L.*; Armendariz, R.*; et al.

Physical Review C, 83(6), p.064903_1 - 064903_29, 2011/06

 Times Cited Count:184 Percentile:99.45(Physics, Nuclear)

Transverse momentum distributions and yields for $$pi^{pm}, K^{pm}, p$$, and $$bar{p}$$ in $$p + p$$ collisions at $$sqrt{s}$$ = 200 and 62.4 GeV at midrapidity are measured by the PHENIX experiment at the RHIC. We present the inverse slope parameter, mean transverse momentum, and yield per unit rapidity at each energy, and compare them to other measurements at different $$sqrt{s}$$ collisions. We also present the scaling properties such as $$m_T$$ and $$x_T$$ scaling and discuss the mechanism of the particle production in $$p + p$$ collisions. The measured spectra are compared to next-to-leading order perturbative QCD calculations.

Journal Articles

Electrical conduction properties of SiC modified by femtosecond laser

Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 12th International Symposium on Laser Precision Microfabrication (LPM 2011) (Internet), 5 Pages, 2011/06

Journal Articles

Azimuthal correlations of electrons from heavy-flavor decay with hadrons in $$p+p$$ and Au+Au collisions at $$sqrt{s_{NN}}$$ = 200 GeV

Adare, A.*; Afanasiev, S.*; Aidala, C.*; Ajitanand, N. N.*; Akiba, Yasuyuki*; Al-Bataineh, H.*; Alexander, J.*; Aoki, Kazuya*; Aphecetche, L.*; Aramaki, Y.*; et al.

Physical Review C, 83(4), p.044912_1 - 044912_16, 2011/04

 Times Cited Count:9 Percentile:49.6(Physics, Nuclear)

Measurements of electrons from the decay of open-heavy-flavor mesons have shown that the yields are suppressed in Au+Au collisions compared to expectations from binary-scaled $$p+p$$ collisions. Here we extend these studies to two particle correlations where one particle is an electron from the decay of a heavy flavor meson and the other is a charged hadron from either the decay of the heavy meson or from jet fragmentation. These measurements provide more detailed information about the interaction between heavy quarks and the quark-gluon matter. We find the away-side-jet shape and yield to be modified in Au+Au collisions compared to $$p+p$$ collisions.

Journal Articles

Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Deki, Manato; Ito, Takuto*; Yamamoto, Minoru*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Applied Physics Letters, 98(13), p.133104_1 - 133104_3, 2011/03

 Times Cited Count:13 Percentile:49.06(Physics, Applied)

Journal Articles

Laser modification aiming at the enhancement of local electrical conductivities in SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.218 - 221, 2010/10

Journal Articles

Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

Tomita, Takuro*; Iwami, Masahiro*; Yamamoto, Minoru*; Deki, Manato*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Nakagawa, Yoshinori*; Kitada, Takahiro*; Isu, Toshiro*; Saito, Shingo*; et al.

Materials Science Forum, 645-648, p.239 - 242, 2010/04

no abstracts in English

Journal Articles

Tritium science and technology for fusion reactor, 3; Theory and code development for evaluation of tritium retention and exhaust in fusion reactor

Oya, Kaoru*; Inai, Kensuke*; Shimizu, Katsuhiro; Takizuka, Tomonori; Kawashima, Hisato; Hoshino, Kazuo; Hatayama, Akiyoshi*; Toma, Mitsunori*; Tomita, Yukihiro*; Kawamura, Gakushi*; et al.

Purazuma, Kaku Yugo Gakkai-Shi, 85(10), p.695 - 703, 2009/10

no abstracts in English

Oral presentation

Pulse pitch dependence of electric conduction by fs-laser-modification on 6H-SiC substrates

Deki, Manato*; Ito, Takuto*; Yamamoto, Minoru*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Femtosecond laser modification aiming at the enhancement of local electric conductivities on SiC

Deki, Manato; Yamamoto, Minoru*; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Fluence dependence of local electrical conductivities in SiC irradiated with femtosecond laser

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Pulse fluence dependence of local electrical conductivities in femtosecond laser modified SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Polarization dependence of local electric conductivities in femtosecond laser modified SiC

Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

32 (Records 1-20 displayed on this page)