Cluster effect on projected range of 30 keV C in silicon

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Vandervorst, W.*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 269(19), p.2080 - 2083, 2011/10

https://doi.org/10.1016/j.nimb.2011.06.015

Pre-amorphized silicon wafers are implanted with 30 keV C and 0.5 keV C ions at room temperature with fluences about 210 atoms/cm. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C implantation is 6.1 nm while that for the C implantation is 4.0 nm, showing a large cluster effect on the projected range.