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Iihara, Junji*; Muramatsu, Yasuji; Takebe, Toshihiko*; Sawamura, Akitaka*; Namba, Akihiko*; Imai, Takahiro*; Denlinger, J. D.*; Perera, R. C. C.*
Japanese Journal of Applied Physics, Part 1, 44(9A), p.6612 - 6617, 2005/09
Times Cited Count：12 Percentile：43.19(Physics, Applied)Electronic structure transition between semiconducting and metallic states in boron (B) -doped diamonds was element-selectively observed by soft X-ray emission and absorption spectroscopy using synchrotron radiation. For the lightly B-doped diamonds, the B 2
-density of states (DOS) in the valence band were enhanced with a steep-edge-feature near the Fermi level, and localized acceptor levels, characteristic of semiconductors, were clearly observed both in B 2- and C 2-DOS in the conduction bands. For the heavily B-doped diamonds, the localized acceptor levels developed into extended energy levels and new energy levels were generated to form an extended conduction band structure which overlapped with the valence band. Thus, this clarified that the metallic energy band structure is actually formed by heavy boron doping. Such valence and conduction band structures observed by soft X-ray emission and absorption spectroscopy well accounted for the electrical properties of the B-doped diamonds.
PNC TJ208 72-01T, 41 Pages, 1972/08
The casting type lower support has been studied to use for monju corefuel assembly, instead of the knock bar type lower support. Last year we succeeded in joyo size casting type lower support. Based on this success, we have designed, abricated 19 castings, and machined them to evaluate their dimensions and structural strength. In the result, we conclude that the casting type lower support is available for Monju core fuel assembly.
