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Isoya, Junichi*; Oshima, Takeshi; Oi, Akihiko; Morishita, Norio; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 206, p.965 - 968, 2003/05
Times Cited Count：8 Percentile：50.24(Instruments & Instrumentation)no abstracts in English
symmetry in 
-type 4H-SiCMizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*
Physical Review B, 66(23), p.235202_1 - 235202_12, 2002/12
Times Cited Count：108 Percentile：95.03(Materials Science, Multidisciplinary)EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T
center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of 
C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C symmetry.
Mizuochi, Norikazu*; Isoya, Junichi*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.497 - 500, 2002/00
Times Cited Count：3 Percentile：16.11(Materials Science, Multidisciplinary)The spin triplet (S=1) single silicon vacancy relared defects in electron irradiated (3MeV 4
10
e/cm
, room temperature) n-type 4H- and p-type 6H-SiC were studied by electron paramagnetic resonance (EPR) spectroscopy. By laser irradiation, the hyperfine couplings (HFC) with nearest-neighbor (NN) atoms of T were observed. As a result of detailed analysis, T was unambiguously assigned to be the single silicon vacancy.
