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Takeuchi, Masaki; Magome, Hirokatsu; Komeda, Masao; Kawasaki, Kozo*
JAEA-Technology 2009-037, 28 Pages, 2010/03
Japan Research Reactor No.3 (JRR-3) has been providing Neutron Transmutation Doping Silicon (NTD-Si). Though the inverse method is employed for producing NTD-Si in JRR-3, it is possible to increase the production rate of NTD-Si by using the neutron filter method. As the result, the prospect that the neutron filter method was able to develop without changing a geometrical size of NTD-Si facility in JRR3 was obtained.
Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro*; Kawasaki, Kozo*; Onizawa, Koji*; Isshiki, Masahiko*
JAEA-Technology 2009-036, 50 Pages, 2009/07
JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process. We have been considering to introduce the neutron filter, which is made of high-purity-titanium, into uniform doping. Silicon carbide (SiC) semiconductors doped with NTD technology are considered suitable for high power devices with superior performances to conventional Si-based devices. The impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k standardization method. Analyses showed that the number of impurity elements detected from the high-purity-titanium and SiC were 6 and 9, respectively. Among these impurity elements, Sc detected from the high-purity-titanium and Fe detected from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials.
Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi; Kameyama, Iwao*; Aizawa, Ryoji*; Kikuchi, Naoyuki*
JAEA-Technology 2006-059, 122 Pages, 2007/01
It is expected that the demand for NTD-Si increases rapidly because of recent productive increase of hybrid-cars. In order to meet the demand, we have investigated the expansion technology of the NTD-Si productivity using the JRR3. This report describes the production of equipment for the external cooling device while proposed as one of the result of the investigation for the JRR-3 uniformity irradiation equipment. After an ingot was irradiated once, it is turned over manually and irradiated again in order irradiate the ingot uniformly. With the conventional equipment, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device.