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=2/1 neoclassical tearing modes in high-
mode discharges in JT-60UIsayama, Akihiko; Matsunaga, Go; Hirano, Yoichi*; JT-60 Team
Plasma and Fusion Research (Internet), 8, p.1402013_1 - 1402013_8, 2013/03
no abstracts in English
Ogura, Shunta*; Komiyama, Takahiro*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi
Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.127 - 129, 2012/12
We have investigated the transient current in a SOI p
n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.
Duan, Z.*; Yang, Z.*; Hoshino, Daiki*; Hirao, Toshio; Taguchi, Mitsumasa; Ouchi, Hirokuni*; Yanagi, Yuichiro*; Nishioka, Yasushiro*
Molecular Crystals and Liquid Crystals, 567(1), p.28 - 33, 2012/09
Times Cited Count：3 Percentile：42.67(Chemistry, Multidisciplinary)
-Conjugated polymers and oligomers are of interest for applications to organic light emitting diodes, solar cells, and organic field effect transistors because of their unique photo-electronic properties. Thienyl-dibenzothiophene oligomers end-capped by hexylphenyl groups, 2,8-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene and 3,7-bis[5-(4-nhexylphenyl)-2-thienyl]dibenzothiophene, were synthesized by Stille cross-coupling reactions. The photo-physical and electrochemical properties of the synthesized oligomers were investigated by Ultraviolet-visible and photoluminescence spectroscopy, cyclic voltammogram, and thermal analyses, and showed appropriate energy band gaps and low HOMO energy levels. The synthesized oligomers are promising candidate materials for durable organic electronic devices.
-ray irradiated organic thin film transistors based on perfluoropentacene with polyimide gate insulatorTakayanagi, Yutaro*; Ouchi, Hirokuni*; Duan, Z.*; Okukawa, Takanori*; Yanagi, Yuichiro*; Yoshida, Akira*; Taguchi, Mitsumasa; Hirao, Toshio; Nishioka, Yasushiro*
Journal of Photopolymer Science and Technology, 25(4), p.493 - 496, 2012/08
Times Cited Count：0 Percentile：0.01(Polymer Science)Organic thin film fields effect transistors are expected to be used in spacecrafts/satellites because they can realize large-size, mechanical flexibility, light weight and low-cost devices. N-channel field effect transistors with a Si/polyimide(PI)/perfluoropentacene/Au structure were fabricated, and irradiated with -ray from Co source. The changes of the drain current vs. source/drain voltage characteristics were measured after every 200 Gy in silicon Gy(Si) irradiations up to the total dose of 1200 Gy(Si). The drain current gradually increased up to the total dose of 1200 Gy(Si). The threshold voltage decreased up to 400 Gy(Si), and gradually recovered above 600 Gy(Si). The mobility was almost unchanged up to 1200 Gy(Si). Those behaviors were explained by accumulation of positive trapped charge within the gate insulator PI near the interface. Evidence for the accumulation of interface traps was hardly observed.
Co-ray irradiation effects on pentacene-based organic thin film transistorsCai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Yutaro*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*
Materials Science Forum, 687, p.576 - 579, 2011/06
Times Cited Count：3 Percentile：81.92(Engineering, Electrical & Electronic)no abstracts in English
Takahashi, Yoshihiro*; Takeyasu, Hidenori*; Okazaki, Yuji*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.173 - 175, 2010/10
no abstracts in English
Co -ray irradiated pentacene-based organic thin film field effect transistorsCai, L.*; Hirao, Toshio; Yano, Hiroaki*; Duan, Z.*; Takayanagi, Hideharu*; Ueki, Hideharu*; Oshima, Takeshi; Nishioka, Yasushiro*
Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.176 - 178, 2010/10
no abstracts in English
-ray irradiationOshima, Takeshi; Onoda, Shinobu; Hirao, Toshio; Takahashi, Yoshihiro*; Vizkelethy, G.*; Doyle, B. L.*
AIP Conference Proceedings 1099, p.1014 - 1017, 2009/03
Metal-Oxide-Semiconductor (MOS) capacitors were made on both n- and p-type Si substrates (n-MOS, and p-MOS). These MOS capacitors were irradiated with -rays at a dose of 6.3 kGy (SiO
) at room temperature. The capacitance-voltage characteristics for MOS capacitors were measured before and after irradiation. The flat band shift for n-MOS and p-MOS capacitors due to -ray irradiation was -12.3 V and -15.2 V, respectively. As for the generation of interface traps, the values for n-MOS and p-MOS capacitors were estimated to be 0.5
10
and 1.710/cm
, respectively. Transient Ion Beam Induced Current (TIBIC) obtained from these MOS capacitors were compared before and after -ray irradiation. For n-MOS capacitors, the peak height of TIBIC signals decreased after -ray irradiation. On the other hand, the peak height of TIBIC signals for p-MOS capacitors increased after -ray irradiation. The applied bias dependence of the peak height of TIBIC signals for MOS capacitors irradiated with -rays can be matched to that for ones before -rays irradiation by shifting the voltage by -13 V for n-MOS capacitors and by -15 V for p-MOS capacitors. These voltage values are in good agreement with the flat band voltage shifts due to -ray irradiation. Since flat band shift occurs due to the generation of positive charge trapped in gate oxide, the change in TIBIC signals observed for MOS capacitors due to -ray irradiation can be interpreted in terms of positive charge generated in oxide.
Takahashi, Yoshihiro*; Fugane, Masaru*; Imagawa, Ryo*; Owaki, Akihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi
JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 7, 2008/11
no abstracts in English
Hirao, Toshio; Onoda, Shinobu; Takahashi, Yoshihiro*; Oshima, Takeshi
JAEA-Review 2008-055, JAEA Takasaki Annual Report 2007, P. 6, 2008/11
no abstracts in English
Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.
Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07
Times Cited Count：4 Percentile：35.71(Instruments & Instrumentation)no abstracts in English
Miyamura, Tomoshi*; Arai, Kentaro*; Mimura, Yasunari*; Yoshimura, Shinobu*; Suzuki, Yoshio
Keisan Kogaku Koenkai Rombunshu, 12(2), p.655 - 658, 2007/05
ADVENTURE_Opt is one of the software modules in the ADVENTURE System, which is an open source software system for computational mechanics. The system is designed for conducting large-scale analysis and design. ADVENTURE_Opt can conduct optimization of artifacts using an optimization algorithm such as the Real coded GA, and the finite element analyses are conducted for evaluating an objective function. In this paper, the ADVENTURE_Opt is modified for using the ITBL environment, which is a grid-environment developed in the national project in Japan. In the computation using the ADVENTURE_Opt, conducting the finite element analyses is the most time consuming. In the present implementation, this computation is conducted in the ITBL environment and the other parts are conducted on a personal computer. The ITBL client API library is used for implementing the system.
n diodes due to heavy ion irradiationHirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10
no abstracts in English
Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10
no abstracts in English
Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10
no abstracts in English
Onishi, Kazunori*; Takahashi, Yoshihiro*; Oki, Takahiro*; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi
no journal, ,
no abstracts in English
Hirao, Toshio
no journal, ,
no abstracts in English
Onishi, Kazunori*; Takahashi, Yoshihiro*; Nakajima, Yasuhito*; Nagasawa, Takaharu*; Fugane, Masaru; Imagawa, Ryo*; Nomoto, Keisuke*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English
Hirao, Toshio; Onoda, Shinobu; Fugane, Masaru; Takahashi, Yoshihiro*; Oshima, Takeshi
no journal, ,
no abstracts in English
Fugane, Masaru; Takahashi, Yoshihiro*; Hirao, Toshio; Onoda, Shinobu; Nakajima, Yasuhito*; Onishi, Kazunori*
no journal, ,
no abstracts in English
