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Oral presentation

Formation process of 1 ML oxide on Si(110) surface and development of interfacial bonding structures

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Suemitsu, Maki*; Narita, Yuzuru*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

Formation processes of one atomic oxide layer and time evolution of chemical bonding states at the interface were investigated by using real-time photoemission spectroscopy with synchrotron radiation. Time evolutions for oxide components (Si$$^{n+}$$:n=1-4) of Si2p photoemission spectra, observed in the conditions of 813K substrate temperature and 1.1$$times$$10$$^{-5}$$ Pa O$$_{2}$$ pressure, were analyzed. Rapid increase of Si$$^{2+}$$ component until oxygen dose of 10 L indicates existance of a reaction path through the Si$$^{2+}$$ state. On the other hand, contrary to the Si(001) oxidation, the Si$$^{3+}$$ component was larger than the Si$$^{4+}$$ component during oxidation. Reaction mechanisms was considered from these facts. Oxygen insertion into chain-like Si-Si bonds densely existing on the (110) surface (A bond) and Si-Si bonds on the (-110) surface is an origin of the first layer oxidation at Si(110) surface. The A bonds may be oxidized partially due to storage of oxidation strains.

Oral presentation

XPS study on the UV/O$$_{3}$$ oxidation of H-terminated Si(110) surface

Nakano, Takuya*; Togashi, Hideaki*; Matsumoto, Mitsutaka*; Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*

no journal, , 

Time evolution of oxide layers in the H-terminated Si(110) surface by the UV/O$$_{3}$$ treatment at room temperature was observed by photoemission spectroscopy with synchrotron radiation. Special oxidation mechanisms for the H-terminated Si(110) surface were found. Si(110) surfaces were hydrogenated by HF treatments. The surface was irradiated and oxidized by UV light (253.7, 184.9 nm) of a low pressure Hg lamp in the air. The UV/O$$_{3}$$ irradiation time dependence of oxide thickness showed a step-wise profile. The step width was about 0.2 nm. The value is close to one oxide layer thickness (0.19 nm) for the Si(110) surface. Si atoms at the Si(110) surface are categolized to A bonds which are chain-like dense bonds, and B bonds which connect up and down A bond chains. The step-wise oxidation behaviour is reasonable if oxidation at the B bonds, in which oxidation strain is smaller than that of A bonds, has larger reaction rate than at the A bonds.

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