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Journal Articles

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation X-ray photomission spectroscopy

Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Vacuum Science and Technology B, 27(1), p.547 - 550, 2009/02

 Times Cited Count:4 Percentile:29.72(Engineering, Electrical & Electronic)

Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Si$$^{n+}$$ ($$n$$=1-4) components in the Si 2$$p$$ spectrum indicates that the Si$$^{3+}$$ component always overwhelms the Si$$^{4+}$$ component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si$$^{4+}$$ is always larger than Si$$^{3+}$$. The dominance of the Si$$^{3+}$$ component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.

Journal Articles

Initial oxidation of Si(110) surface evaluated by photoemission spectroscopy and substrate-curvature measurements

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya

Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.207 - 210, 2009/01

The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O$$_{2}$$ gas pressure was ranging from 5.0$$times$$10$$^{-6}$$ Pa to 6.7$$times$$10$$^{-6}$$ and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.

Journal Articles

XPS real-time monitoring on the development of Si suboxides during formation of thermal oxides on Si(110) surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Kato, Atsushi*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

Shingaku Giho, 108(80), p.65 - 70, 2008/06

The growth process of thermal oxides on Si(110) surface and the development of their interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was clarified that the Si$$^{3+}$$ component in the Si 2p core-level spectra is always much higher than that of Si$$^{4+}$$ for 0-1 mono-layer (ML) oxides on Si(110) surface. Observations on the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic-reaction model proposed for the Si(001) oxidation can be also applicable to the Si(110) oxidation.

Oral presentation

Bonding structures of 1 mono-layer oxide on Si(110) evaluated by SR-PES

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Konno, Atsushi*; Matsumoto, Mitsutaka*; Saito, Eiji*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

Ultra-thin oxide layer formation processes at Si(110) surface has been studied by using real-time photoemission spectroscopy with synchrotron radiation. Distribution of Si suboxides in the one mono layer oxide has been analyzed quantitatively and Si-O bonding configurations have been considered. Analyses for Si2p photoemission spectra, which were observed in the one mono layer oxide formed at 873 K and O$$_{2}$$ pressure of 1.0$$times$$10$$^{-5}$$ Pa on the Si(110) surface, resulted in avandance of an Si$$^{+3}$$ suboxide component whereas an Si$$^{+4}$$ component was dominant in the oxidation of Si(001) surface. The Si(110) surface consists of dense A bonds, which combine Si atoms in the same layer, and dilute B bonds, which combine Si atoms in the neibouring layers. Remaning of a part of the A bonds, which is easy to be distorted, as non-oxidized parts causes the dominant Si$$^{+3}$$ component formation.

Oral presentation

Initial oxidation of Si(110) as studied by real-time SR-XPS

Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

Initial oxidation processes of Si(110) surfaces and chemical bonding states of silicon atoms at the SiO$$_{2}$$/Si(110) interface have been investigated by using real-time synchrotron radiation photoemission spectroscopy. XPS Si$$^{n+}$$ components in Si 2p indicates that the Si$$^{3+}$$ component is always more abundant than Si$$^{4+}$$ during oxidation up to one monolayer, in sharp contrast to the case of Si(100) where Si$$^{4+}$$ is dominant comparing to Si$$^{3+}$$. The dominance of Si$$^{3+}$$ component is related to a different reactivity of the two types of bonding against insertion of oxygen atoms.

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