Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry

Tomioka, Yuichi*; Iida, Takeshi*; Midorikawa, Masahiko*; Tsukada, Hiroyuki*; Yoshimoto, Kimihiro*; Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Ishida, Yuki*; Kosugi, Ryoji*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.1029 - 1032
Publication Year/Month	:	2002/00
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.389-393.1029
DOI for research data	:
Keywords	:	SiC; 酸化膜; エリプソメータ; 界面; 中間層; 水素燃焼酸化; LTO
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	埼玉大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:20.33 Category:Materials Science, Multidisciplinary
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Registration No. : B20010565
JAEA Abstracts No. :
Paper Submission No. : 25606

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