Defects in 30 keV Er $^{+}$ -implanted SiO $_{2}$ /Si studied by positron annihilation and cathodoluminescence

Hirata, Koichi*; Arai, Hideyuki*; Kawasuso, Atsuo; Sekiguchi, T.*; Kobayashi, Yoshinori*; Okada, Sohei

no abstracts in English

Language	:	English
Journal	:	Journal of Applied Physics
Volume	:	90
Number	:	1
Pages	:	p.237 - 242
Publication Year/Month	:	2001/07
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1063/1.1371948
DOI for research data	:
Keywords	:	Er; 陽電子消滅; カソードルミネッセンス; SiO $_{2}$ /Si
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:21.84 Category:Physics, Applied
Altmetrics	:

Registration No. : A20010179
JAEA Abstracts No. : 290974
Paper Submission No. : 18477

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Defects in 30 keV Er-implanted SiO/Si studied by positron annihilation and cathodoluminescence

Defects in 30 keV Er $^{+}$ -implanted SiO $_{2}$ /Si studied by positron annihilation and cathodoluminescence