Refine your search:     
Report No.

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.



- Accesses




Category:Physics, Applied



[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.