Induced lattice defects in InGaAs laser diodes by high-temperature -ray irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi

no abstracts in English

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	308-310
Number	:
Pages	:	p.1185 - 1188
Publication Year/Month	:	2001/12
Meeting title	:	21st International Conference on Defects in Semiconductors (ICDS-21)
Held date	:	2001/07
Location (city)	:	Giessen
Location (country)	:	Germany
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/S0921-4526(01)00937-1
DOI for research data	:
Keywords	:	InGaAsP; レーザダイオード; 線照射; 高温照射
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	熊本電波高専/立教大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:44.94 Category:Physics, Condensed Matter
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Registration No. : B20010745
JAEA Abstracts No. : 300813
Paper Submission No. : 19291

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